Search Results - "Hoskins, Brian D."

3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications by Adam, Gina C., Hoskins, Brian D., Prezioso, Mirko, Merrikh-Bayat, Farnood, Chakrabarti, Bhaswar, Strukov, Dmitri B.

“…We report a monolithically integrated 3-D metal-oxide memristor crossbar circuit suitable for analog, and in particular, neuromorphic computing applications…”
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Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions by Mikheev, Evgeny, Hoskins, Brian D., Strukov, Dmitri B., Stemmer, Susanne

“…Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms…”
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Spontaneous current constriction in threshold switching devices by Goodwill, Jonathan M., Ramer, Georg, Li, Dasheng, Hoskins, Brian D., Pavlidis, Georges, McClelland, Jabez J., Centrone, Andrea, Bain, James A., Skowronski, Marek

“…Threshold switching devices are of increasing importance for a number of applications including solid-state memories and neuromorphic circuits. Their…”
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Optimized stateful material implication logic for three- dimensional data manipulation by Adam, Gina C., Hoskins, Brian D., Prezioso, Mirko, Strukov, Dmitri B.

“…The monolithic three-dimensional integration of memory and logic circuits could dramatically improve the performance and energy efficiency of computing…”
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Stateful characterization of resistive switching TiO2 with electron beam induced currents by Hoskins, Brian D., Adam, Gina C., Strelcov, Evgheni, Zhitenev, Nikolai, Kolmakov, Andrei, Strukov, Dmitri B., McClelland, Jabez J.

“…Metal oxide resistive switches are increasingly important as possible artificial synapses in next-generation neuromorphic networks. Nevertheless, there is…”
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Gradient Decomposition Methods for Training Neural Networks With Non-ideal Synaptic Devices by Zhao, Junyun, Huang, Siyuan, Yousuf, Osama, Gao, Yutong, Hoskins, Brian D., Adam, Gina C.

“…While promising for high-capacity machine learning accelerators, memristor devices have non-idealities that prevent software-equivalent accuracies when used…”
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In Aqua Electrochemistry Probed by XPEEM: Experimental Setup, Examples, and Challenges by Nemšák, Slavomír, Strelcov, Evgheni, Guo, Hongxuan, Hoskins, Brian D., Duchoň, Tomáš, Mueller, David N., Yulaev, Alexander, Vlassiouk, Ivan, Tselev, Alexander, Schneider, Claus M., Kolmakov, Andrei

“…Recent developments in environmental and liquid cells equipped with electron transparent graphene windows have enabled traditional surface science…”
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Streaming Batch Eigenupdates for Hardware Neural Networks by Hoskins, Brian D, Daniels, Matthew W, Huang, Siyuan, Madhavan, Advait, Adam, Gina C, Zhitenev, Nikolai, McClelland, Jabez J, Stiles, Mark D

“…Neural networks based on nanodevices, such as metal oxide memristors, phase change memories, and flash memory cells, have generated considerable interest for…”
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Publisher Correction: Stateful characterization of resistive switching TiO2 with electron beam induced currents by Hoskins, Brian D., Adam, Gina C., Strelcov, Evgheni, Zhitenev, Nikolai, Kolmakov, Andrei, Strukov, Dmitri B., McClelland, Jabez J.

“…The original version of this Article contained an error in Eq. 1. The arrows between the symbols “T” and “B”, and “B” and “T”, were written “↔” but should have…”
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Nanoscale Mapping of the Double Layer Potential at the Graphene–Electrolyte Interface by Strelcov, Evgheni, Arble, Christopher, Guo, Hongxuan, Hoskins, Brian D, Yulaev, Alexander, Vlassiouk, Ivan V, Zhitenev, Nikolai B, Tselev, Alexander, Kolmakov, Andrei

“…The electrical double layer (EDL) governs the operation of multiple electrochemical devices, determines reaction potentials, and conditions ion transport…”
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Modeling and Experimental Demonstration of a Hopfield Network Analog-to-Digital Converter with Hybrid CMOS/Memristor Circuits by Guo, Xinjie, Merrikh-Bayat, Farnood, Gao, Ligang, Hoskins, Brian D, Alibart, Fabien, Linares-Barranco, Bernabe, Theogarajan, Luke, Teuscher, Christof, Strukov, Dmitri B

“…The purpose of this work was to demonstrate the feasibility of building recurrent artificial neural networks with hybrid complementary metal oxide…”
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Maximizing stoichiometry control in reactive sputter deposition of TiO2 by Hoskins, Brian D., Strukov, Dmitri B.

“…Thin films of amorphous TiO2 are grown by direct current (DC) reactive magnetron sputtering. Using modern models of DC reactive sputtering, conditions were…”
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Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions by Goodwill, Jonathan M., Prasad, Nitin, Hoskins, Brian D., Daniels, Matthew W., Madhavan, Advait, Wan, Lei, Santos, Tiffany S., Tran, Michael, Katine, Jordan A., Braganca, Patrick M., Stiles, Mark D., McClelland, Jabez J.

“…Magnetic tunnel junctions (MTJs) provide an attractive platform for implementing neural networks because of their simplicity, non-volatility, and scalability…”
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Correction: Corrigendum: Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions by Mikheev, Evgeny, Hoskins, Brian D., Strukov, Dmitri B., Stemmer, Susanne

“…Nature Communications 5: Article number: 3990 (2014); Published 2 June 2014; Updated 7 December 2015 In Fig. 2a of the main manuscript and in Supplementary…”
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A Fully Integrated, Automatically Generated DC-DC Converter Maintaining >75% Efficiency From 398 K Down to 23 K Across Wide Load Ranges in 12 nm FinFET by Li, Anhang, Lee, Jeongsup, Mukim, Prashansa, Hoskins, Brian D., Shrestha, Pragya, Wentzloff, David, Blaauw, David, Sylvester, Dennis, Saligane, Mehdi

“…This paper presents a fully integrated recursive successive-approximation switched capacitor (RSC) DC-DC converter implemented using an automatic cell-based…”
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75% Efficiency From 398 K Down to 23 K Across Wide Load Ranges in 12-nm FinFET by Li, Anhang, Lee, Jeongsup, Mukim, Prashansa, Hoskins, Brian D, Shrestha, Pragya, Wentzloff, David, Blaauw, David, Sylvester, Dennis, Saligane, Mehdi

“…75% efficiency across a vast range of output currents and temperatures. Our design targets voltage scaling for applications, such as cryo-computing,…”
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Corrigendum: Resistive switching and its suppression in Pt/Nb:SrTiO3 junctions by Mikheev, Evgeny, Hoskins, Brian D, Strukov, Dmitri B, Stemmer, Susanne

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Publisher Correction: Stateful characterization of resistive switching TiO 2 with electron beam induced currents by Hoskins, Brian D, Adam, Gina C, Strelcov, Evgheni, Zhitenev, Nikolai, Kolmakov, Andrei, Strukov, Dmitri B, McClelland, Jabez J

“…The original version of this Article contained an error in Eq. 1. The arrows between the symbols "T" and "B", and "B" and "T", were written "↔" but should have…”
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Stateful characterization of resistive switching TiO 2 with electron beam induced currents by Hoskins, Brian D, Adam, Gina C, Strelcov, Evgheni, Zhitenev, Nikolai, Kolmakov, Andrei, Strukov, Dmitri B, McClelland, Jabez J

“…Metal oxide resistive switches are increasingly important as possible artificial synapses in next-generation neuromorphic networks. Nevertheless, there is…”
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Measurement-driven neural-network training for integrated magnetic tunnel junction arrays by Borders, William A, Madhavan, Advait, Daniels, Matthew W, Georgiou, Vasileia, Lueker-Boden, Martin, Santos, Tiffany S, Braganca, Patrick M, Stiles, Mark D, McClelland, Jabez J, Hoskins, Brian D

“…Phys. Rev. Applied 22, 014057 (2024) The increasing scale of neural networks needed to support more complex applications has led to an increasing requirement…”
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