Search Results - "Hoskins, B D"

Training and operation of an integrated neuromorphic network based on metal-oxide memristors by Prezioso, M., Merrikh-Bayat, F., Hoskins, B. D., Adam, G. C., Likharev, K. K., Strukov, D. B.

“…A transistor-free metal-oxide memristor crossbar with low device variability is realised and trained to perform a simple classification task, opening the way…”
Get full text

Training andoperation of an integrated neuromorphic network based on metal-oxide memristors by Prezioso, M, Merrikh-Bayat, F, Hoskins, B D, Adam, G C, Likharev, K K, Strukov, D B

“…Despite much progress in semiconductor integrated circuit technology, the extreme complexity of the human cerebral cortex, with its approximately 10^sup 14^…”
Get full text

Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications by Zaslavsky, A., Richter, C. A., Shrestha, P. R., Hoskins, B. D., Le, S. T., Madhavan, A., McClelland, J. J.

“…Cryogenic operation of complementary metal oxide semiconductor (CMOS) silicon transistors is crucial for quantum information science, but it brings deviations…”
Get full text

Research Update: Electron beam-based metrology after CMOS by Liddle, J. A., Hoskins, B. D., Vladár, A. E., Villarrubia, J. S.

“…The magnitudes of the challenges facing electron-based metrology for post-CMOS technology are reviewed. Directed self-assembly, nanophotonics/plasmonics, and…”
Get full text

Electron beam-based metrology after CMOS by Liddle, J A, Hoskins, B D, Vladár, A E, Villarrubia, J S

“…The magnitudes of the challenges facing electron-based metrology for post-CMOS technology are reviewed. Directed selfassembly, nanophotonics/plasmonics, and…”
Get full text

Utilizing I-V non-linearity and analog state variations in ReRAM-based security primitives by Adam, G. C., Nili, H., Kim, J., Hoskins, B. D., Kavehei, O., Strukov, D. B.

“…The underlying variability in the ReRAM device operation, while undesired in many applications, can be advantageous for hardware security primitives. ReRAM…”
Get full text

Highly-uniform multi-layer ReRAM crossbar circuits by Adam, G. C., Hoskins, B. D., Prezioso, M., Bayat, F. Merrikh, Chakrabarti, B., Strukov, D. B.

“…Resistive switching memories have been identified as an enabling technology for a variety of emerging computing applications, including neuromorphic and…”
Get full text

Optimized stateful material implication logic for three- dimensional data manipulation by Adam, Gina C., Hoskins, Brian D., Prezioso, Mirko, Strukov, Dmitri B.

“…The monolithic three-dimensional integration of memory and logic circuits could dramatically improve the performance and energy efficiency of computing…”
Get full text