Search Results - "Hoschl, P."

Polarization Study of Defect Structure of CdTe Radiation Detectors by Grill, R., Belas, E., Franc, J., Bugar, M., Uxa, S., Moravec, P., Hoschl, P.

“…Polarization of CdTe radiation detectors in the dark was studied theoretically by taking into account a wide set of detector characteristics relevant to the…”
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Photoconductivity Mapping of Semi-Insulating CdZnTe by Kubat, J., Franc, J., Dedic, V., Belas, E., Moravec, P., Babentsov, V., Hoschl, P., Grill, R.

“…Semi-insulating CdZnTe crystals were studied by photoconductivity mapping using both the contactless method and measurement with evaporated Au contacts. The…”
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Semi-insulating Te-saturated CdTe by Grill, R., Franc, J., Hoschl, P., Turkevych, I., Belas, E., Moravec, P.

“…The evolution of defect structure and self-compensation is theoretically studied within quasichemical formalism in undoped and donor-doped Te-saturated CdTe…”
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Melt growth and post-grown annealing of semiinsulating (CdZn)Te by vertical gradient freeze method by Franc, J., Šedivý, L., Belas, E., Bugár, M., Zázvorka, J., Pekárek, J., Uxa, Š., Höschl, P., Fesh, R.

“…We present results of development of CdZnTe semi‐insulating crystals prepared by Vertical Gradient Freeze method in a 4‐zone furnace. We applied the way of…”
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Chemical polishing of CdZnTe substrates fabricated from crystals grown by the vertical-gradient freezing method by MORAVEC, P, HÖSCHL, P, FRANC, J, BELAS, E, FESH, R, GRILL, R, HORODYSKY, P, PRAUS, P

“…Chemical polishing is a process of crucial importance in the manufacture of epiready substrates for molecular beam epitaxy (MBE) of high-quality HgCdTe layers…”
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Evaluation of the Concentration of Deep Levels in Semi-Insulating CdTe by Photoconductivity and TEES by Kubat, J., Elhadidy, H., Franc, J., Grill, R., Belas, E., Hoschl, P., Praus, P.

“…The concentrations of near-midgap levels in high-resistivity CdTe were estimated based on a combined evaluation of room temperature lux-ampere characteristics…”
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Multi-Species Diffusion in CdTe by Grill, R., Belas, E., Bugar, M., Hoschl, P., Nahlovskyy, B., Fochuk, P., Panchuk, O., Bolotnikov, A.E., James, R.B.

“…We studied theoretically chemical self-diffusion and the diffusion of extrinsic atoms in CdTe. We compiled a general model describing the multi-species…”
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Characterization of compensation and trapping in CdTe and CdZnTe: Recent advances by Babentsov, V., Franc, J., Höschl, P., Fiederle, M., Benz, K. W., Sochinskii, N. V., Dieguez, E., James, R. B.

“…Results on the properties of the known impurities, Ge, Sn, V and Bi, and the lattice imperfections, VCd and TeCd are summarized. We discuss their role in…”
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High-temperature defect study of tellurium-enriched CdTe:In by Grill, R., Fochuk, P., Franc, J., Nahlovskyy, B., Höschl, P., Moravec, P., Zakharuk, Z., Nykonyuk, Ye, Panchuk, O.

“…The defect structure of donor‐doped Te‐rich CdTe is studied theoretically within quasi‐chemical formalism and experimentally in heavily In‐doped CdTe by in…”
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Mapping of zinc content in Cd1-xZnxTe by optical methods by HORODYSKY, P, FRANC, J, GRILL, R, HLIDEK, P, MORAVEC, P, BOK, J, HÖSCHL, P

“…The paper compares different methods of optical mapping of zinc concentration x in Cd1-xZnxTe wafers for low x values and reviews the procedures for deriving…”
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High-temperature defect structure of Cd- and Te-rich CdTe by Grill, R., Franc, J., Hoschl, P., Turkevych, I., Belas, E., Moravec, P., Fiederle, M., Benz, K.W.

“…Quasi-chemical formalism is used to evaluate high temperature (600/spl deg/C-1000/spl deg/C) in situ conductivity and Hall effect measurements and…”
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Preparation of Inclusion and Precipitate Free Semi-Insulating CdTe by Belas, E., Bugar, M., Grill, R., Franc, J., Hoschl, P.

“…Annealing conditions used for the preparation of semi-insulating CdTe after elimination of inclusions and precipitates are discussed. Second phase defects are…”
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Influence of space charge on lux-ampere characteristics of high-resistivity CdTe by FRANC, J, GRILL, R, KUBAT, J, HLIDEK, P, BELAS, E, MORAVEC, P, HÖSCHL, P

“…The concentrations of defects forming at near-midgap level in high-resistivity CdTe were estimated on the basis of room-temperature lux-ampere characteristics…”
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CdTe and CdZnTe crystals for room temperature gamma-ray detectors by Franc, J, Höschl, P, Belas, E, Grill, R, Hlı́dek, P, Moravec, P, Bok, J

“…CdTe(Cl) detectors from CdTe single crystals, grown by the Bridgman method from Te-rich melt, were fabricated. The quality of the detectors was tested with…”
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Dynamics of Point Defects in Tellurium-Rich CdTe by Grill, R., Franc, J., Belas, E., Hoschl, P., Nahlovskyy, B., Moravec, P., Fochuk, P., Verzhak, Y., Panchuk, O.

“…The evolution of defect structure occurring during the cooling of Tellurium-rich CdTe is studied theoretically and experimentally. Classical nucleation theory…”
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Electromigration of Mobile Defects in CdTe by Belas, E., Grill, R., Bugar, M., Prochazka, J., Hlidek, P., Praus, P., Franc, J., Hoschl, P.

“…Electromigration of mobile charged defects in external electric field is investigated at various temperatures and biases in conductive undoped and…”
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Chemical Etching of CdTe in Aqueous Solutions of H2O2-HI-Citric Acid by Ivanits'ka, V G, Moravec, P, Franc, J, Tomashik, Z F, Feychuk, P I, Tomashik, V M, Shcherbak, L P, Masek, K, Hoschl, P

“…An iodine-based etching system, H2O2-HI-citric acid, has been developed and tested on CdTe samples with orientations (111)A, (111)B, (110), and (100). The…”
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Preparation of Semi-Insulating CdTe:In by Post-Grown Annealing After Elimination of Te Inclusions by Belas, E., Grill, R., Franc, J., Moravec, P., Bok, J., Hoschl, P.

“…Annealing under Cd-saturated overpressure within the temperature range of 700-800degC was used for elimination of Te inclusions in high resistive In-doped…”
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Influence of Space Charge and Potential Fluctuations on Photoconductivity Spectra of Semiinsulating CdTe by Franc, J.., Kubat, J.., Grill, R.., Hoschl, P..

“…The influence of polarization effects on room temperature photoconductivity spectra of high-resistivity CdTe was investigated. It was shown, that space charge…”
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Semi-insulating CdTe with a minimized deep-level doping by GRILL, R, FRANC, J, TURKEVYCH, I, HÖSCHL, P, BELAS, E, MORAVEC, P

“…The possibility to prepare semi-insulating CdTe with a deep-level doping below the limit 10^sup 13^ cm^sup -3^ demanded in detector industry is studied…”
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