Search Results - "Hornback, V."

Gas-phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W on TiN/Ti/SiO2 structures for integrated circuit fabrication by Ramanath, G., Carlsson, J. R. A., Greene, J. E., Allen, L. H., Hornback, V. C., Allman, D. J.

“…Delamination of TiN/Ti bilayers on SiO2 is a serious problem during W chemical vapor deposition (CVD) using WF6 to form vertical interconnects in integrated…”
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Impact of the interaction between nitrogen implant and NO anneal on narrow-width transistors by Gopinath, V.P., Kamath, A., Mirabedini, M., Hornback, V., Le, Y., Badowski, A., Wen-Chin Yeh

“…This study reports a new behavior in narrow-width transistors resulting from the interaction of oxides grown with nitrogen implant with the nitridation…”
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Impact of the interaction between nitrogen implant and NO anneal on narrow-width transistors by Gopinath, V P, Kamath, A, Mirabedini, M, Hornback, V, Le, Ynhi, Badowski, A, Yeh, Wen-Chin

“…This study reports a new behavior in narrow-width transistors resulting from the interaction of oxides grown with nitrogen implant with the nitridation…”
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Radiation Characteristics of a 0.11μm Modified Commercial CMOS Process by Poivey, C., Hak Kim, Berg, M.D., Forney, J., Seidleck, C., Vilchis, M.A., Phan, A., Irwin, T., LaBel, K.A., Saigusa, R.K., Mirabedini, M.R., Finlinson, R., Suvkhanov, A., Hornback, V., Jun Song, Tung, J.

“…The authors present radiation data, total ionizing dose and single event effects, on the LSI logic 0.11 μm commercial process and two modified versions of this…”
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Effect of nitrogen incorporation on PMOS negative bias temperature instability in ultrathin oxi-nitrides by Duong, L., Li, E., Gopinath, V., Prasad, S., Lin, J., Pachura, D., Hornback, V.

“…This work reports the effect of nitrogen incorporation on negative bias temperature instability (NBTI) of PMOS devices with 1.4 nm equivalent oxide thickness…”
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Method of increasing gate nitridation and its impact on CMOS devices by Gopinath, V.P., Hornback, V., Le, Y., Kamath, A., Duong, L., Lin, J., Mirabedini, M.R., Yeh, W.C.

“…A process that combines shallow nitrogen implant with rapid thermal nitridation is shown to double the nitrogen content in ultra-thin oxynitrides for the same…”
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Investigation of indium activation by SRP and SIMS for sub-0.1 μm retrograde channels by Suvkhanov, A., Mirabedini, M., Hornback, V.

“…SRP, SIMS and C-V measurements of implanted Si wafers were carried out in this study to examine the effect of annealing conditions on the activation of…”
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A 90 nm CMOS technology with modular quadruple gate oxides for advanced SoC applications by Mirabedini, M.R., Gopinath, V.P., Kamath, A., Lee, M.Y., Hsia, W.J., Hornback, V., Le, Y., Badowski, A., Baylis, B., Li, E., Prasad, S., Kobozeva, O., Haywood, J., Catabay, W., Yeh, W.C.

“…This paper describes a 90 nm System-on-a-chip (SoC) technology with modular quadruple gate oxides (16, 28, 50, 64 /spl Aring/) on the same chip allowing…”
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