Search Results - "Horn, M.W."
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1
A review of tin (II) monosulfide and its potential as a photovoltaic absorber
Published in Solar energy materials and solar cells (01-06-2016)“…Research groups around the world are investigating tin (II) monosulfide (SnS) via various deposition methods and heterostructures for thin film solar cells…”
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Journal Article -
2
Dielectric Response of Tantalum Oxide Deposited on Polyethylene Terephthalate (PET) Film by Low-Temperature Pulsed-DC Sputtering for Wound Capacitors
Published in IEEE transactions on components and packaging technologies (01-12-2009)“…Deposition of high-k tantalum oxide thin films on thin polymer substrates was investigated, using low-temperature (-100degC) pulsed-dc reactive sputtering…”
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Journal Article -
3
Control of Phase in Tin Sulfide Thin Films Produced via RF-Sputtering of SnS2 Target with Post-deposition Annealing
Published in Journal of electronic materials (01-01-2016)“…Tin (II) Monosulfide (SnS) has become an interesting new material for thin film photovoltaics. SnS-based devices have achieved limited success in improved…”
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Journal Article -
4
Optical properties of transparent conducting oxide sculptured thin films for application in thin film silicon photovoltaics
Published in Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005 (2005)“…Oxide thin films serving dual roles of transparent conductor and optical filter have been proposed on the basis of the sculptured thin film (STF) concept. This…”
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Conference Proceeding -
5
The ultimate in real-time ellipsometry: Multichannel Mueller matrix spectroscopy
Published in Applied surface science (31-10-2006)“…A review of the techniques and applications of multichannel ellipsometry in the dual-rotating-compensator configuration is given. This ellipsometric approach…”
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Journal Article Conference Proceeding -
6
Utilizing self-assembled multilayers in lithographic processing for nanostructure fabrication: Initial evaluation of the electrical integrity of nanogaps
Published in Microelectronic engineering (01-03-2005)“…We apply self-assembly to form multilayers on gold structures formed by lithographic techniques to create patterns with spacings in the 10–100 nm regime…”
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Journal Article Conference Proceeding -
7
Roughness and Phase Evolution in Si1-xGex:H: Guidance for Multijunction Photovoltaics
Published in 2006 IEEE 4th World Conference on Photovoltaic Energy Conference (01-05-2006)“…In this study, the amorphous-phase roughening transition thickness has been determined as a function of process variables in plasma-enhanced chemical vapor…”
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Conference Proceeding -
8
193-nm lithography
Published in IEEE journal of selected topics in quantum electronics (01-09-1995)“…The trend in microelectronics toward printing features 0.25 /spl mu/m and below has motivated the development of lithography at the 193-nm wavelength of argon…”
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Journal Article -
9
Amorphous carbon films as planarization layers deposited by plasma-enhanced chemical vapor deposition
Published in IEEE electron device letters (01-09-1990)“…A dry planarization process utilizing plasma-enhanced chemical vapor deposition (PECVD) of amorphous carbon (a-C:H) films has been developed. The degree of…”
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Journal Article -
10
Structure and dielectric properties of amorphous tantalum pentoxide thin film capacitors
Published in 2007 Annual Report - Conference on Electrical Insulation and Dielectric Phenomena (01-01-2007)“…Amorphous tantalum pentoxide films are currently being studied as a high-k dielectric for high energy-density metal-insulator-metal capacitors. Tantalum…”
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Conference Proceeding -
11
Hardening process for plasma deposited planar amorphous carbon films used in bilayer resists
Published in Seventh International IEEE Conference on VLSI Multilevel Interconnection (1990)“…A dry planarization process has been developed to produce planar amorphous carbon (a-C:H) films. These films provide a high degree of planarization over large…”
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Conference Proceeding -
12
Planarizing a-C:H and SiO/sub 2/ films prepared by bias electron cyclotron resonance plasma deposition
Published in Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference (1989)“…Room-temperature bias electron cyclotron resonance plasma deposition of both carbon- and silicon-based planarization materials has been demonstrated…”
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Conference Proceeding