Search Results - "Horio, K."

Analysis of Dependence of Breakdown Voltage on Gate-Drain Distance in AlGaN/GaN HEMTs With High-k Passivation Layer by Tomita, R., Ueda, S., Kawada, T., Mitsuzono, H., Horio, K.

“…A 2-D analysis of OFF-state breakdown characteristics of AlGaN/GaN HEMTs with a high-<inline-formula> <tex-math notation="LaTeX">{k}…”
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Expression of myeloperoxidase enhances the chemosensitivity of leukemia cells through the generation of reactive oxygen species and the nitration of protein by Sawayama, Y, Miyazaki, Y, Ando, K, Horio, K, Tsutsumi, C, Imanishi, D, Tsushima, H, Imaizumi, Y, Hata, T, Fukushima, T, Yoshida, S, Onimaru, Y, Iwanaga, M, Taguchi, J, Kuriyama, K, Tomonaga, M

“…Myeloperoxidase (MPO), a pivotal lineage marker for acute myeloid leukemia (AML), has been also shown to have a prognostic value: a high percentage of…”
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Numerical analysis of slow current transients and power compression in GaAs FETs by Kazami, Y., Kasai, D., Horio, K.

“…Two-dimensional transient simulation of GaAs MESFETs is performed when the gate voltage and the drain voltage are both changed abruptly. Quasi-pulsed…”
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Two-dimensional analysis of surface-state effects on turn-on characteristics in GaAs MESFETs by Horio, K., Yamada, T.

“…Surface-state effects on gate-lag or slow current transient in GaAs MESFETs are studied by two-dimensional (2-D) simulation. It is shown that the gate-lag…”
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Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs by Mitani, Y., Kasai, D., Horio, K.

“…Effects of surface states and recess structures on breakdown characteristics of GaAs MESFETs are studied by two-dimensional (2-D) analysis. It is shown that…”
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Numerical analysis of surface-state effects on kink phenomena of GaAs MESFETs by Horio, K., Wakabayashi, A.

“…Effects of surface states on the "kink" (or an abnormal increase in output conductance with the drain voltage) in GaAs MESFETs are studied by two-dimensional…”
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Inguinal Hernia: Crossfire Between the Meshes by Teoh, A., Chan, K., Chiu, P., Leong, H., Ng, E., Protasov, A. V., Titarov, D. L., Shemyatovsky, K. A., Origi, M., Moroni, M. R., Veronesi, P., Militello, P., Branchini, L., Frattolillo, F., Varale, R., Pappalardo, V., Zuliani, W., Burgmans, I., Voorbrood, C., Schouten, N., Clevers, G. J., Davids, P. H. P., Verleisdonk, E. J. M. M., Simmermacher, R. K. J., Miyazaki, K., Porrero-Carro, J. L., García-Pastor, P., Hidalgo-Pascual, M., Gutierrez-Romero, R., Picazo-Yeste, J., Jenkin, A., Perera, M., Presley, R., Amato, G., Romano, G., Agrusa, A., Di Buono, G., Cocorullo, G., Gulotta, G., Fang, Z. X., Ren, F., Zhou, J. P., Liu, D. C., Tian, J., Ungpinitpong, W., Morfesis, F., Rose, B., Kishimoto, T., Okada, Y., Hayashi, E., Nagata, J., Ohira, S., Horio, K., Ishida, Y., Takahashi, R., Kanie, Y., Terao, N., Noritake, O., Narui, R., Kubota, H., Lorenz, R., Koch, A., Born, H., Wiese, M., Cejnar, S., Kalhan, S., Bhardwaj, A., Bhatia, P., Khetan, M., John, S., Bindal, V.

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Analysis of gate-lag phenomena in recessed-gate and buried-gate GaAs MESFETs by Wakabayashi, A., Mitani, Y., Horio, K.

“…Two-dimensional analysis of gate-lag phenomena in recessed-gate and buried-gate GaAs MESFETs is performed, and their dependence on the structural parameters…”
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Two-dimensional analysis of substrate-trap effects on turn-on characteristics in GaAs MESFETs by Horio, K., Wakabayashi, A., Yamada, T.

“…Effects of substrate traps on turn-on characteristics of GaAs MESFETs are studied by two dimensional (2-D) simulation. When the off-state gate voltage is much…”
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Simulation of slow current transients and current compression in AlGaAs/GaAs HFETs by Ikarashi, H., Kitamura, K., Kurosawa, N., Horio, K.

“…Two-dimensional transient simulations of AlGaAs/GaAs HFETs are performed in which substrate traps and surface states are considered. When the drain voltage is…”
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Simulation of slow current transients and current collapse in GaN FETs by Takayanagi, H., Nakano, H., Yonemoto, K., Horio, K.

“…Two-dimensional transient simulations of GaN MESFETs are performed in which a three-level compensation model is adopted for a semi-insulating buffer layer,…”
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Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface by Horio, K., Yanai, H.

“…A numerical model for heterojunctions is discussed in which current transport across the heterojunction interface is taken into account by using thermionic…”
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Two-dimensional analysis of substrate-related kink phenomena in GaAs MESFET's by Horio, K., Satoh, K.

“…Two-dimensional simulations of GaAs MESFET's are made in which impact ionization of carriers and impurity compensation by deep levels in semi-insulating…”
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Two-dimensional simulations of drain-current transients in GaAs MESFET's with semi-insulating substrates compensated by deep levels by Horio, K., Fuseya, Y.

“…Drain-current transients of GaAs MESFET's with deep donors "EL2" in the semi-insulating substrate are simulated in the range t=10/sup -13/ to 10/sup 2/ s. It…”
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Effective hierarchical optimization using integration of solution spaces and its application to multiple Vehicle Routing Problem by Ishikawa, S., Horio, K., Kubota, R.

“…Hierarchical optimization is an optimization method that is divided the problem into several levels of hierarchy. In hierarchical optimization, a complex…”
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Energy transport simulation for graded HBT's: Importance of setting adequate values for transport parameters by Horio, K., Okada, T., Nakatani, A.

“…An energy transport simulation method for graded AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is presented in which Al composition-, doping density-,…”
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Simulation of Lag Phenomena and Pulsed I-V Curves of Compound Semiconductor FETs as Affected by Impact Ionization by Kazami, Y., Kasai, D., Mitani, Y., Horio, K.

“…Turn-on characteristics of GaAs MESFETs are simulated when the gate and the drain voltages are changed abruptly, and quasi-pulsed I-V curves are derived from…”
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Analysis of kink-related backgating effect in GaAs MESFET by Horio, K., Usami, K.

“…Two-dimensional simulation of backgating effect in a GaAs MESFET is made in which impact ionization of carriers and deep donors "EL2" in the substrate are…”
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Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs by Hafiz, F., Kumeno, M., Tanaka, T., Horio, K.

“…We perform a two-dimensional transient analysis of field-plate GaAs MESFETs in which surface states are considered. Quasi-pulsed current-voltage curves are…”
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Analysis of carrier-blocking effect in AlGaAs/GaAs HBT's with insulating external collector and design criteria for collector-up HBT's by Horio, K., Nakatani, A.

“…Two-dimensional simulations of cutoff frequencies for AlGaAs/GaAs HBT's with perfectly insulating external collector are made, and the results are compared…”
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