Search Results - "Horie, Hideyoshi"

Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers by Ueno, Kohei, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi, Amanai, Hidetaka, Nagao, Satoru, Horie, Hideyoshi

“…The authors have grown nonpolar AlN layers on m -plane ZnO substrates using pulsed laser deposition and investigated their structural properties. The direct…”
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Growth of a -plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer by Kobayashi, Atsushi, Kawano, Satoshi, Ueno, Kohei, Ohta, Jitsuo, Fujioka, Hiroshi, Amanai, Hidetaka, Nagao, Satoru, Horie, Hideyoshi

“…Nonpolar a -plane GaN films were grown on nearly lattice-matched a -plane ZnO substrates by pulsed laser deposition. Growth of GaN on a -plane ZnO at…”
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Room temperature growth of semipolar AlN (1$ bar 1 $02) films on ZnO (1$ bar 1 $02) substrates by pulsed laser deposition by Ueno, Kohei, Kobayashi, Atsushi, Ohta, Jitsuo, Fujioka, Hiroshi, Amanai, Hidetaka, Nagao, Satoru, Horie, Hideyoshi

“…Semipolar AlN $(1 \bar 102) $ films have been prepared on ZnO $(1 \bar 102) $ substrates by employing room temperature (RT) grown AlN layers using pulsed laser…”
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Room-temperature epitaxial growth of high-quality m -plane InGaN films on ZnO substrates by Shimomoto, Kazuma, Kobayashi, Atsushi, Ueno, Kohei, Ohta, Jitsuo, Oshima, Masaharu, Fujioka, Hiroshi, Amanai, Hidetaka, Nagao, Satoru, Horie, Hideyoshi

“…The authors have grown high‐quality m ‐plane In0.36Ga0.64N (1$ \bar 1 $00) films on ZnO (1$ \bar 1 $00) substrates at room temperature (RT) by pulsed laser…”
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Weakly Index Guided Buried-Stripe Type 980 nm Laser Diodes Grown by a Combination of Gas Source Molecular Beam Epitaxy and Metalorganic Vapor Phase Epitaxy with an AlGaAs/InGaP/GaAs Double Etch Stop Structure by Horie, Hideyoshi, Nagao, Satoru, Shimoyama, Kenji, Fujimori, Toshinari

“…In order to fabricate weakly index guided buried-stripe type 980 nm laser diodes (LDs) precisely and reproducibly, we have developed a novel double etch stop…”
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Thermal rollover characteristics up to 150°C of buried-stripe type 980-nm laser diodes with a current injection window delineated by a SiNx layer by Horie, H, Yamamoto, Y, Arai, N, Ohta, H

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Reliability improvement of 980-nm laser diodes with a new facet passivation process by Horie, H., Ohta, H., Fujimori, T.

“…A facet passivation process especially for the realization of highly reliable 980-nm laser diodes (LDs) has been developed. This process includes three…”
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Longitudinal-mode characteristics of weakly index-guided buried-stripe type 980-nm laser diodes with and without substrate-mode-induced phenomena by Horie, H., Arai, N., Yamamoto, Y., Nagao, S.

“…We have carried out a systematic experimental study of the longitudinal-mode characteristics of 980-nm laser diodes with a weakly index-guided buried-stripe…”
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Greater than 500-mW CW kink-free single transverse-mode operation of weakly index guided buried-stripe type 980-nm laser diodes by Horie, H., Arai, N., Mitsuishi, Y., Komuro, N., Kaneda, H., Gotoh, H., Usami, M., Matsushima, Y.

“…This is the first report of greater than 500-mW CW kink-free single transverse-mode operation of 980-nm laser diodes with a weakly index guided buried-stripe…”
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High quality In0.2Ga0.8As/Al x Ga1− x As ( x =0−0.32) strained single quantum wells grown by molecular beam epitaxy by Hayakawa, Toshiro, Horie, Hideyoshi, Nagai, Masaharu, Niwata, Yoshihisa

“…The effect of the Al composition on photoluminescence (PL) in the In0.2Ga0.8As/AlxGa1−xAs single strained quantum wells with the well width of 6 nm has been…”
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Surface Acoustic Wave Paramagnetic Resonance in Iron Doped-LiNbO 3 by Cho, Yasuo, Horie, Hideyoshi, Yamanouchi, Kazuhiko

“…We studied surface acoustic wave-acoustic paramagnetic resonance (SAW-APR) of Fe 2+ doped LiNbO 3 . Firstly, we theoretically calculated the parameters of spin…”
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Surface acoustic wave paramagnetic resonance in iron doped-LiNbO3 by CHO, Y, HORIE, H, YAMANOUCHI, K

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