Search Results - "Horcajo, Sara Martin"

Simple and Accurate Method to Estimate Channel Temperature and Thermal Resistance in AlGaN/GaN HEMTs by Martin-Horcajo, Sara, Ashu Wang, Romero, Maria-Fatima, Tadjer, Marko Jak, Calle, Fernando

“…Self-heating effects in AlGaN/GaN high-electron mobility transistors grown on three different substrates have been evaluated for ambient temperatures between 0…”
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Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure by Cucak, Dejana, Vasic, Miroslav, Garcia, Oscar, Angel Oliver, Jesus, Alou, Pedro, Antonio Cobos, Jose, Wang, Ashu, Martin-Horcajo, Sara, Romero, Maria Fatima, Calle, Fernando

“…This paper presents an analytical model for input, output, and reverse capacitance of a normally on AlGaN/GaN high-electron mobility transistor (HEMT) with a…”
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Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers by Mutta, Geeta Rani, Routoure, Jean Marc, Guillet, Bruno, Méchin, Laurence, Grandal, Javier, Martin-Horcajo, Sara, Brazzini, Tommaso, Calle, Fernando, Sánchez-García, Miguel A., Marie, Philippe, Ruterana, Pierre

“…Bulk conduction in molecular beam epitaxial InN layers has been confirmed using low frequency noise measurements versus temperature. A generation-recombination…”
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Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs by Martin-Horcajo, Sara, Pomeroy, James W., Lambert, Benoit, Jung, Helmut, Blanck, Herve, Kuball, Martin

“…An experimental method to measure the gate metal temperature of GaN-based high electron mobility transistors is demonstrated. The technique is based on…”
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Impact of N2 Plasma Power Discharge on AlGaN/GaN HEMT Performance by ROMERO, M.-Fátima, JIMENEZ, Ana, GONZALEZ-POSADA FLORES, Fernando, MARTIN-HORCAJO, Sara, CALLE, Fernando, MUNOZ, Elias

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Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes by Malinowski, Pawel E., Duboz, Jean-Yves, De Moor, Piet, Minoglou, Kyriaki, John, Joachim, Horcajo, Sara Martin, Semond, Fabrice, Frayssinet, Eric, Verhoeve, Peter, Esposito, Marco, Giordanengo, Boris, BenMoussa, Ali, Mertens, Robert, Van Hoof, Chris

“…We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon…”
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