Search Results - "Hopkins, C. G."

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  1. 1

    Computational Investigation of the Delamination of Polymer Coatings During Stent Deployment by Hopkins, C. G, McHugh, P. E, McGarry, J. P

    Published in Annals of biomedical engineering (01-07-2010)
    “…Recent advances in angioplasty have involved the application of polymer coatings to stent surfaces for purposes of drug delivery. Given the high levels of…”
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    Depth distributions and range parameters for He implanted in Si and GaAs by Wilson, R. G., Deline, V. R., Hopkins, C. G.

    Published in Applied physics letters (15-11-1982)
    “…Depth distributions for He implanted in Si and GaAs measured by secondary ion mass spectrometry (SIMS) are reported as a function of ion energy from 20 to 300…”
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    Incorporation of boron during the growth of GaAs single crystals by Hopkins, C. G., Deline, V. R., Blattner, R. J., Evans, C. A., Magee, T. J.

    Published in Applied physics letters (15-06-1980)
    “…A study of GaAs prepared by conventional Bridgman techniques and by liquid-encapsulated Czochralski methods reveals that only small amounts of boron are…”
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  4. 4

    Dopant redistribution during Pd2Si formation using rapid thermal annealing by ALVI, N. S, KWONG, D. L, HOPKINS, C. G, BAUMAN, S. G

    Published in Applied physics letters (26-05-1986)
    “…Rapid thermal annealing has been used to form Pd2Si by reacting thin layers of Pd metal on As-implanted Si. An enhanced growth rate for the Pd2Si has been…”
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    Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing by Magee, T. J., Kawayoshi, H., Ormond, R. D., Christel, L. A., Gibbons, J. F., Hopkins, C. G., Evans, C. A., Day, D. S.

    Published in Applied physics letters (01-12-1981)
    “…Using the Boltzmann transport equation, calculations were obtained predicting the zones of stoichiometric imbalance produced in GaAs after ion implantation at…”
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    The morphology and characteristics of TaSi2/Si films oxidized at high pressure by Wang, Yangyuan, Chen, Jinhua, Tao, Jiang, Feng, Sunqi, Zhang, Ai‐Zhen, Stimmell, J. B., Hopkins, C. G., Strathman, M. D., Herman, M. H.

    “…The oxidation of Ta silicide on Si substrates has been investigated for pressures from 1 to 10.7 atm. The oxidation of these films fits the Deal–Grove…”
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    Grain growth in Al alloy conductors as a result of rapid annealing by TOWNER, J. M, VAN DE VEN, E. P, HOPKINS, C. G

    Published in Applied physics letters (01-01-1984)
    “…Aluminum and aluminum alloy thin films were rapidly annealed using high intensity visible light. Under suitable conditions, substantial grain growth was…”
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    Dopant redistribution during Pd sub(2)Si formation using rapid thermal annealing by Alvi, N S, Kwong, D L, Hopkins, C G, Bauman, S G

    Published in Applied physics letters (01-01-1986)
    “…Rapid thermal annealing has been used to form Pd sub(2)Si by reacting thin layers of Pd metal on As-implanted Si. An enhanced growth rate for the Pd sub(2)Si…”
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    Grain Growth in Aluminum Alloy Conductors as a Result of Rapid Annealing by Towner, J M, de Ven, E P V, Hopkins, C G

    Published in Applied physics letters (15-01-1984)
    “…Aluminum and Al alloy thin films were rapidly annealed using high-intensity visible light. Under suitable conditions, substantial grain growth was achieved in…”
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