Search Results - "Hooper, S. E."

Nitrides optoelectronic devices grown by molecular beam epitaxy by Kauer, M., Bousquet, V., Hooper, S. E., Barnes, J. M., Windle, J., Tan, W. S., Heffernan, J.

“…We report on the characteristics of our recent room temperature continuous‐wave InGaN quantum well laser diodes grown by by molecular beam epitaxy (MBE)…”
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InGaN violet laser diodes grown by Molecular Beam Epitaxy by Heffernan, J., Kauer, M., Hooper, S. E., Bousquet, V., Johnson, K.

“…We report on the first InGaN quantum well laser diodes grown by molecular beam epitaxy (MBE). Devices were grown by gas‐source MBE using ammonia as a source of…”
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Effects of dietary selenium and moisture on the physical activity and thyroid axis of cats by Hooper, S. E., Backus, R., Amelon, S.

“…Summary Consumption of canned cat food is considered a risk factor for the development of feline hyperthyroidism. Because selenium and water are substantially…”
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InGaN multiple quantum well lasers grown by MBE by Heffernan, J., Kauer, M., Johnson, K., Zellweger, C., Hooper, S. E., Bousquet, V.

“…We report progress in the development of InGaN multiple quantum well laser diodes grown by MBE. Lasers were grown by gas‐source MBE using ammonia as the source…”
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InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy by Hooper, S.E., Kauer, M., Bousquet, V., Johnson, K., Zellweger, C., Heffernan, J.

“…The latest results from MBE-grown InGaN multiple quantum well laser diodes and light emitting diodes are presented. The laser diodes were grown on…”
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Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings by Rossetti, M., Smeeton, T. M., Tan, W.-S., Kauer, M., Hooper, S. E., Heffernan, J., Xiu, H., Humphreys, C. J.

“…The degradation of InGaN∕GaN laser diodes grown by molecular beam epitaxy is analyzed by using surface mapping of the photoluminescence emission on a…”
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The growth and properties of group III nitrides by Foxon, C.T., Cheng, T.S., Novikov, S.V., Lacklison, D.E., Jenkins, L.C., Johnston, D., Orton, J.W., Hooper, S.E., Baba-Ali, N., Tansley, T.L., Tret'yakov, V.V.

“…We have studied a novel material system (AlGa)(AsN), which can be lattice matched to GaP (or more importantly Si), grown using a low temperature modified…”
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Performance and degradation characteristics of blue-violet laser diodes grown by molecular beam epitaxy by Tan, W. S., Kauer, M., Hooper, S. E., Smeeton, T. M., Bousquet, V., Rossetti, M., Heffernan, J., Xiu, H., Humphreys, C. J.

“…This paper reports the state of the art performance for blue–violet laser diodes (LD) grown by molecular beam epitaxy. Improvements in device design and growth…”
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Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy by Cheng, T. S., Jenkins, L. C., Hooper, S. E., Foxon, C. T., Orton, J. W., Lacklison, D. E.

“…We report on the growth of GaN with a zinc-blende, wurtzite, or a mixed phase structure on (001)GaP and (001)GaAs substrates by a low-temperature modified…”
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Strong carrier confinement and negligible piezoelectric effect in InGaN/GaN quantum dots by Sénès, M., Smith, K.L., Smeeton, T.M., Hooper, S.E., Heffernan, J.

“…We report photoluminescence and time-resolved photoluminescence experiments on In x Ga 1− x N/GaN quantum dots grown by plasma-assisted molecular beam epitaxy…”
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The growth and properties of mixed group V nitrides by Orton, J. W., Lacklison, D. E., Baba-Ali, N., Foxon, C. T., Cheng, T. S., Novikov, S. V., Johnston, D. F. C., Hooper, S. E., Jenkins, L. C., Challis, L. J., Tansley, T. L.

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Optical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates by Cheng, T.S., Hooper, S.E., Jenkins, L.C., Foxon, C.T., Lacklison, D.E., Dewsnip, J.D., Orton, J.W.

“…Both zinc-blende and wurtzite GaN layers were grown by a modified molecular beam epitaxy (MBE) method. These layers were grown on semi-insulating GaAs(100)…”
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Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy by Cheng, T.S., Foxon, C.T., Jenkins, L.C., Hooper, S.E., Orton, J.W., Novikov, S.V., Popova, T.B., Tret'yakov, V.V.

“…Films of Ga(AsN) and Al(AsN) have been grown using a modified molecular beam epitaxy method. In both cases the concentration of nitrogen incorporated is…”
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Auger investigation of group III nitride films grown by molecular beam epitaxy by Novikov, S.V., Foxon, C.T., Cheng, T.S., Tansley, T.L., Orton, J.W., Lacklison, D.E., Johnston, D., Baba-Ali, N., Hooper, S.E., Jenkins, L.C., Eaves, L.

“…We discuss the growth and properties of III-nitride films prepared by molecular beam epitaxy (MBE) using an RF activated nitrogen plasma source. Binary…”
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Morphology of luminescent GaN films grown by molecular beam epitaxy by Trager-Cowan, C., O’Donnell, K. P., Hooper, S. E., Foxon, C. T.

“…GaN thin films were grown by molecular beam epitaxy on sapphire substrates. Scanning electron (SE) and atomic force microscopies reveal that on a typical film…”
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InGaN laser diodes fabricated by MBE by Heffernan, J., Kauer, M., Johnson, K., Zellweger, C., Bousquet, V., Hooper, S.E.

“…InGaN multiple quantum well laser diodes have been fabricated by MBE. Lasers grown on GaN template substrates and on free-standing GaN substrates exhibit a…”
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Incorporation of Mg in GaN grown by molecular beam epitaxy by Orton, J.W., Foxon, C.T., Cheng, T.S., Hooper, S.E., Novikov, S.V., Ber, B.Ya, Kudriavtsev, Yu.A.

“…We report Mg doping experiments in GaN grown by plasma-enhanced molecular beam epitaxy on sapphire and GaAs substrates. Secondary ion mass spectrometry was…”
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Evaluation of ohmic contacts to GaAs(100) and (111)B using InAs/GaAs short period superlattice and InGaAs intermediate layers by Hooper, S. E., Wilks, S. P., Elliot, M., Westwood, D. I., Woolf, D. A., Williams, R. H.

“…The nature of InAs/GaAs short period superlattice (SPS) and In x Ga1−x As based ohmic contacts, grown by molecular‐beam epitaxy, on GaAs(100) and (111)B…”
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Auger electron spectroscopy, x‐ray diffraction, and scanning electron microscopy of InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates by Jenkins, L. C., Cheng, T. S., Foxon, C. T., Hooper, S. E., Orton, J. W., Novikov, S. V., Tret’yakov, V. V.

“…Layers of InN and GaN have been successfully grown on GaAs(001) and GaP(001) substrates using a modified molecular beam epitaxy technique. X‐ray diffraction…”
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Some aspects of GaN growth on GaAs(100) substrates using molecular beam epitaxy with an RF activated nitrogen-plasma source by Hooper, S.E., Foxon, C.T., Cheng, T.S., Jenkins, L.C., Lacklison, D.E., Orton, J.W., Bestwick, T., Kean, A., Dawson, M., Duggan, G.

“…We have investigated how supplying active nitrogen from an RF activated plasma source under various plasma conditions influences certain aspects of the growth…”
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