Search Results - "Honma, Fumitaka"

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  1. 1
    Safety Shutdown of the High Temperature Engineering Test Reactor during Loss of Off-site Electric Power Simulation Test

    Safety Shutdown of the High Temperature Engineering Test Reactor during Loss of Off-site Electric Power Simulation Test by TAKEDA, Takeshi, NAKAGAWA, Shigeaki, HONMA, Fumitaka, TAKADA, Eiji, FUJIMOTO, Nozomu

    Published in Journal of nuclear science and technology (01-09-2002)
    “…The high temperature engineering test reactor (HTTR) is a graphite-moderated and helium-gas-cooled reactor, which is the first high temperature gas-cooled…”
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  2. 2
    Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1−Ge CVD

    Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1−Ge CVD by Yamashiro, Tadayoshi, Kikuchi, Toshifumi, Ishii, Makoto, Honma, Fumitaka, Sakuraba, Masao, Matsuura, Takashi, Murota, Junichi, Tsuchiya, Toshiaki

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  3. 3
    Development of operation and maintenance technology for HTGRs by using HTTR (High Temperature engineering Test Reactor)

    Development of operation and maintenance technology for HTGRs by using HTTR (High Temperature engineering Test Reactor) by Shimizu, Atsushi, Kawamoto, Taiki, Tochio, Daisuke, Saito, Kenji, Sawahata, Hiroaki, Honma, Fumitaka, Furusawa, Takayuki, Saikusa, Akio, Takada, Shoji, Shinozaki, Masayuki

    Published in Nuclear engineering and design (01-05-2014)
    “…To establish the technical basis of HTGR (High Temperature Gas cooled Reactor), the long term high temperature operation using HTTR was carried out in the high…”
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  4. 4
    Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1-xGex CVD

    Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1-xGex CVD by YAMASHIRO, Tadayoshi, KIKUCHI, Toshifumi, ISHII, Makoto, HONMA, Fumitaka, SAKURABA, Masao, MATSUURA, Takashi, MUROTA, Junichi, TSUCHIYA, Toshiaki

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  5. 5
    Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si 1− xGe x CVD

    Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si 1− xGe x CVD by Yamashiro, Tadayoshi, Kikuchi, Toshifumi, Ishii, Makoto, Honma, Fumitaka, Sakuraba, Masao, Matsuura, Takashi, Murota, Junichi, Tsuchiya, Toshiaki

    “…The fabrication process is investigated to improve the super self-aligned ultra-shallow junction electrode MOSFET (S 3EMOSFET) by utilizing in-situ…”
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  6. 6
    Safety Shutdown of the High Temperature Engineering Test Reactor during Loss of Off-site Electric Power Simulation Test

    Safety Shutdown of the High Temperature Engineering Test Reactor during Loss of Off-site Electric Power Simulation Test by TAKEDA, Takeshi, NAKAGAWA, Shigeaki, HONMA, Fumitaka, TAKADA, Eiji, FUJIMOTO, Nozomu

    Published in Journal of nuclear science and technology (01-09-2002)
    “…The high temperature engineering test reactor (HTTR) is a graphite-moderated and helium-gas-cooled reactor, which is the first high temperature gas-cooled…”
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  7. 7
    Ultrashallow Junction Formation Using Low-Temperature Selective Si 1-x Ge x Chemical Vapor Deposition

    Ultrashallow Junction Formation Using Low-Temperature Selective Si 1-x Ge x Chemical Vapor Deposition by Honma, Fumitaka, Murota, Junichi, Goto, Kinya, Maeda, Takahiro, Yasuji Sawada, Yasuji Sawada

    Published in Japanese Journal of Applied Physics (01-04-1994)
    “…In situ B doping and selective epitaxy on Si at 550° C in Si 1- x Ge x chemical vapor deposition (CVD) have been investigated for forming high-performance…”
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