Search Results - "Hong Ha Vuong"

An improved electron and hole mobility model for general purpose device simulation by Darwish, M.N., Lentz, J.L., Pinto, M.R., Zeitzoff, P.M., Krutsick, T.J., Hong Ha Vuong

“…A new, comprehensive, physically-based, semiempirical, local model for transverse-field dependent electron and hole mobility in MOS transistors is presented…”
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ESD design challenges by Sachdev, Manoj, Vuong, Hong-Ha

“…With the scaling of CMOS technology the design of Electro-Static Discharge (ESD) protection circuits is becoming an increasingly challenging task. This…”
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Use of transient enhanced diffusion to tailor boron out-diffusion by Vuong, H.-H., Xie, Y.-H., Frei, M.R., Hobler, G., Pelaz, L., Rafferty, C.S.

“…We report experimental results demonstrating the use of transient enhanced diffusion (TED) caused by silicon implant for "tuning" boron out-diffusion. The…”
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BiCMOS technology for mixed-digital, analog, and RF applications by Rich, D.A., Carroll, M.S., Frei, M.R., Ivanov, T.G., Mastrapasqua, M., Moinian, S., Chen, A.S., King, C.A., Harris, E., De Blauwe, J., Hong-Ha Vuong, Archer, V., Ng, K.

“…As process technology advances, we will see SoC systems with millions of digital gates combined with RF circuits operating in the tens of GHz…”
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Process variability characterization and interconnect modeling by Hong-Ha Vuong, Yuhua Cheng

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Technology CAD at AT&T by Lloyd, Peter, McAndrew, Colin C., McLennan, Michael J., Nassif, Sani R., Singhal, Kishore, Singhal, Kumud, Zeitzoff, Peter M., Darwish, Mohamed N., Haruta, Ken, Lentz, Janet L., Vuong, Hong-Ha, Pinto, Mark R., Rafferty, Conor S., Kizilyalli, Isik C.

“…Technology computer-aided design (TCAD) is essential to the design of modern integrated circuit fabrication processes. TCAD tools must not only model real…”
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Sidegating in a GaAs MBE-grown HFET structure by Vuong, T.H.H., Gibson, W.C., Ahrens, R.E., Parsey, J.M.

“…The sidegating effect in a MBE-grown HFET GaAs structure is considerable and persists to large distances. On the other hand, the leakage current is very low. A…”
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Impact of interface impurities on heterostructure field-effect transistors by Reynolds, C.L., Vuong, H.H.T., Peticolas, L.J.

“…The influence of C and Si impurities at the substrate/epitaxy interface on the threshold voltage of GaAs/AlGaAs selectively doped heterostructure transistors…”
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