Search Results - "Holzworth, M."

Desoxycorticosterone pivalate‐salt treatment leads to non‐dipping hypertension in Per1 knockout mice by Solocinski, K., Holzworth, M., Wen, X., Cheng, K.‐Y., Lynch, I. J., Cain, B. D., Wingo, C. S., Gumz, M. L.

“…Aim Increasing evidence demonstrates that circadian clock proteins are important regulators of physiological functions including blood pressure. An established…”
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Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries by Rudawski, N.G., Yates, B.R., Holzworth, M.R., Jones, K.S., Elliman, R.G., Volinsky, A.A.

“…Ion beam modification to effect ion beam mixing without changing morphology was investigated as a means to improve the electrochemical performance of Ge thin…”
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Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors by Douglas, E.A., Chang, C.Y., Gila, B.P., Holzworth, M.R., Jones, K.S., Liu, L., Kim, Jinhyung, Jang, Soohwan, Via, G.D., Ren, F., Pearton, S.J.

“…► AlGaN/GaN HEMTs exhibit a negative temperature dependence for V CRI. ► Breakdown at V CRI does not occur immediately with applied bias. ► DC stress results…”
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Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing by Kim, Byung-Jae, Hwang, Ya-Hsi, Ahn, Shihyun, Zhu, Weidi, Dong, Chen, Lu, Liu, Ren, Fan, Holzworth, M. R., Jones, Kevin S., Pearton, Stephen J., Smith, David J., Kim, Jihyun, Zhang, Ming-Lan

“…The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated…”
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Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors by Whiting, P.G., Rudawski, N.G., Holzworth, M.R., Pearton, S.J., Jones, K.S., Liu, L., Kang, T.S., Ren, F.

“…AlGaN/GaN high electron mobility transistors (HEMTs) represent a rapidly maturing technology plagued by reliability issues which are not well understood. One…”
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Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor by Holzworth, M. R., Rudawski, N. G., Pearton, S. J., Jones, K. S., Lu, L., Kang, T. S., Ren, F., Johnson, J. W.

“…A subnanometer thick interfacial oxide layer present between the Ni/Au gate metal stack and semiconducting epilayers of an AlGaN/GaN high electron mobility…”
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Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts by Whiting, P.G., Rudawski, N.G., Holzworth, M.R., Pearton, S.J., Jones, K.S., Liu, L., Kang, T.S., Ren, F.

“…AlGaN/GaN HEMTs are poised to become the technology of choice in RF and power electronics applications where high operating frequencies and high breakdown…”
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Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors by Whiting, P.G., Holzworth, M.R., Lind, A.G., Pearton, S.J., Jones, K.S., Liu, L., Kang, T.S., Ren, F., Xin, Y.

“…High electron mobility transistors based on Aluminum Gallium Nitride/Gallium Nitride heterostructures are poised to become the technology of choice for a wide…”
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Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors by Holzworth, M. R., Rudawski, N. G., Whiting, P. G., Pearton, S. J., Jones, K. S., Lu, L., Kang, T. S., Ren, F., Patrick, E., Law, M. E.

“…AlGaN/GaN high electron mobility transistors were electrically stressed using off-state high reverse gate biases. In devices demonstrating the largest, most…”
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Characterization of the gate oxide of an AlGaN/GaN high electronmobility transistor by Holzworth, M. R., Rudawski, N. G., Pearton, S. J., Jones, K. S., Lu, L., Kang, T. S., Ren, F., Johnson, J. W.

“…A subnanometer thick interfacial oxide layer present between the Ni/Au gate metal stack and semiconducting epilayers of an AlGaN/GaN high electron mobility…”
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Instantaneous Rates of Grain Growth by Beck, Paul A., Holzworth, M. L., Hu, Hsun

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