Search Results - "Holtz, P.O."

Corrigendum to “Photoluminescence study of basal plane stacking faults in ZnO nanowires” [Physica B 439 (2014) 50–53] by Khranovskyy, Volodymyr, Eriksson, M.O., Radnoczi, G.Z., Khalid, Abbas, Zhang, Hongzhou, Holtz, P.O., Hultman, Lars, Yakimova, Rositza

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Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures by Buyanov, A.V., Bergman, J.P., Sandberg, J.A., Sernelius, B.E., Holtz, P.O., Dalfors, J., Monemar, B., Amano, H., Akasaki, I.

“…Photoluminescence and photoconductivity data from GaN/AlGaN modulation doped heterostructures, in the temperature interval between 2 and 250K, are presented…”
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Fabrication of ZnO nanodisks from structural transformation of ZnO nanorods through natural oxidation and their emission characteristics by Israr-Qadir, M., Jamil-Rana, S., Nur, O., Willander, M., Larsson, L.A., Holtz, P.O.

“…An environmentally benign natural oxidation based synthetic technique has been developed to grow and transform the ZnO nanorods into nanodisks at a very mild…”
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Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD by Lundskog, Anders, Hsu, C.W., Nilsson, D., Karlsson, K.F., Forsberg, U., Holtz, P.O., Janzén, E.

“…Hexagonal GaN pyramids have been fabricated by hot-wall metal organic chemical vapor deposition (hot-wall MOCVD) and the growth evolution has been studied. It…”
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Photoluminescence study of basal plane stacking faults in ZnO nanowires by Khranovskyy, V., Eriksson, M.O., Radnoczi, G.Z., Khalid, A., Zhang, H., Holtz, P.O., Hultman, L., Yakimova, R.

“…We have investigated the photoluminescence (PL) of ZnO nanowires (NWs) containing a high density (~1×106cm−1) of basal plane stacking faults (BSFs). It was…”
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Optical characterization of individual quantum dots by Holtz, P.O., Hsu, C.W., Larsson, L.A., Karlsson, K.F., Dufåker, D., Lundskog, A., Forsberg, U., Janzen, E., Moskalenko, E.S., Dimastrodonato, V., Mereni, L., Pelucchi, E.

“…Optical characterization of single quantum dots (QDs) by means of micro-photoluminescence (μPL) will be reviewed. Both QDs formed in the Stranski–Krastanov…”
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Comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars and the seeding layer grown on 4H-SiC by Sun, J.W., Khranovskyy, V., Mexis, M., Eriksson, M., Syväjärvi, M., Tsiaoussis, I., Yazdi, G.R., Peyre, H., Juillaguet, S., Camassel, J., Holtz, P.O., Bergman, P., Hultman, L., Yakimova, R.

“…We report on a comparative micro-photoluminescence investigation of ZnO hexagonal nanopillars (HNPs) and the seeding layer grown on the off-axis 4H-SiC…”
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Effect of a magnetic field on energy transfer of band states to the [Mn.sup.2+] 3d shell in the CdMgTe matrix with ultrathin CdMnTe layers by Agekyan, V.F, Holtz, P.O, Karczewskic, G, Moskalenkorf, E.S, Serov, A.Yu, Filosofov, N.G

“…The effect of external magnetic fields on two radiative (band-to-band and on-site) recombination channels in II--VI dilute magnetic semiconductors and related…”
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Polarized emission and excitonic fine structure energies of InGaN quantum dots by Karlsson, K.F., Amloy, S., Chen, Y.T., Chen, K.H., Hsu, H.C., Hsiao, C.L., Chen, L.C., Holtz, P.O.

“…The linear polarization of the excitonic emission from quantum dot-like potential minima formed in a thin InGaN layer is investigated. The recorded emission…”
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Optimising uniformity of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy by Höglund, Linda, Petrini, E., Asplund, C., Malm, H., Andersson, J.Y., Holtz, P.O.

“…A route towards optimisation of uniformity and density of InAs/(InGaAs)/GaAs quantum dots grown by metal organic vapor phase epitaxy (MOVPE) through successive…”
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Nanointegration of ZnO with Si and SiC by Khranovskyy, V., Tsiaoussis, I., Larsson, L.A., Holtz, P.O., Yakimova, Rositza

“…The study is dedicated to some aspects of the controlled heteroepitaxial growth of nanoscaled ZnO structures and an investigation of their general and…”
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Quantum structure based infrared detector research and development within Acreo’s centre of excellence IMAGIC by Andersson, J.Y., Höglund, L., Noharet, B., Wang, Q., Ericsson, P., Wissmar, S., Asplund, C., Malm, H., Martijn, H., Hammar, M., Gustafsson, O., Hellström, S., Radamson, H., Holtz, P.O.

“…Acreo has a long tradition of working with quantum structure based infrared (IR) detectors and arrays. This includes QWIP (quantum well infrared…”
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Surface-plasmon resonances in indium nitride with metal-enriched nano-particles by Shubina, T.V., Plotnikov, D.S., Vasson, A., Leymarie, J., Larsson, M., Holtz, P.O., Monemar, B., Lu, Hai, Schaff, W.J., Kop’ev, P.S.

“…Plasmonic resonances in In-enriched nano-particles, spontaneously formed during growth, can dramatically modify optical properties of InN. Experimental support…”
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Selective optical doping to predict the performance and reveal the origin of photocurrent peaks in quantum dots-in-a-well infrared photodetectors by Höglund, L., Holtz, P.O., Pettersson, H., Asplund, C., Wang, Q., Almqvist, S., Malm, H., Petrini, E., Andersson, J.Y.

“…Resonant optical pumping across the band gap was used as artificial doping in InAs/In 0.15Ga 0.85As/GaAs quantum dots-in-a-well infrared photodetectors…”
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Photoluminescence study of Si/Ge quantum dots by Larsson, M., Elfving, A., Holtz, P.O., Hansson, G.V., Ni, W.-X.

“…Ge quantum dots embedded in Si are studied by means of photoluminescence (PL). The temperature dependent PL measurements show two different types of…”
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Photoluminescence studies of Sn quantum dots in Si grown by MBE by Karim, A., Hansson, G.V., Ni, W.-X., Holtz, P.O., Larsson, M., Atwater, H.A.

“…A few nanometer thick Sn x Si 1− x layers with x ⩽ 0.1 grown on silicon (1 0 0) surfaces can be used to form tin (α-Sn) quantum dots as a result of heat…”
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Phonon-Assisted Photoluminescence in InGaN/GaN Multiple Quantum Wells by Paskov, P.P., Holtz, P.O., Monemar, B., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I.

“…The LO‐phonon sidebands of the photoluminescence in InGaN/GaN multiple quantum wells has been investigated in the temperature range from 20 to 300 K. Analysing…”
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Investigations of optical properties of active regions in vertical cavity surface emitting lasers grown by MBE by Regiński, K, Ochalski, T, Muszalski, J, Bugajski, M, Bergman, J.P, Holtz, P.O, Monemar, B

“…The design of the vertical cavity surface emitting lasers (VCSELs) needs proper tuning of many different optical parameters of those structures. So, the…”
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Anisotropy of the In-Plane Strain in GaN Grown on A-Plane Sapphire by Paskov, P.P., Darakchieva, V., Paskova, T., Holtz, P.O., Monemar, B.

“…A comparative study of GaN layer grown by hydride vapour phase epitaxy on A‐plane sapphire before and after removal of the substrate is presented. A large…”
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Internal Structure of Free Excitons in GaN by Paskov, P.P., Paskova, T., Holtz, P.O., Monemar, B.

“…Polarized photoluminescence is used to study the fine structure of free excitons in thick GaN layers grown on differently oriented sapphire substrates. The…”
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