Search Results - "Holland, A.S."

Accurate Estimation of Low ( ≪ \hbox^\ \Omega \cdot \hbox^) Values of Specific Contact Resistivity by Bhaskaran, M., Sriram, S., Holland, A.S.

“…Advancements in nanotechnology have created the need for efficient means of communication of electrical signals to nanostructures, which can be addressed using…”
Get full text

Analytical and Finite-Element Modeling of a Cross Kelvin Resistor Test Structure for Low Specific Contact Resistivity by Holland, A.S., Reeves, G.K., Bhaskaran, M., Sriram, S.

“…Various test structures have been employed to determine the specific contact resistivity (rho c ) of ohmic contacts, and cross Kelvin resistor (CKR) test…”
Get full text

Universal error corrections for finite semiconductor resistivity in cross-Kelvin resistor test structures by Holland, A.S., Reeves, G.K., Leech, P.W.

“…The Cross-Kelvin Resistor test structure is commonly used for the extraction of the specific contact resistance of ohmic contacts. Analysis using this…”
Get full text

Rectifying electrical contacts to n-type 6H–SiC formed from energetically deposited carbon by Kracica, M., Mayes, E.L.H., Tran, H.N., Holland, A.S., McCulloch, D.G., Partridge, J.G.

“…Electrical contacts to n-type 6H–SiC deposited from carbon fluxes with differing energies (0.12–1.0 keV) have exhibited deposition energy dependent…”
Get full text

Degassing processes during lava dome growth: Insights from Santiaguito lava dome, Guatemala by Holland, A.S. Peter, Watson, I. Matthew, Phillips, Jeremy C., Caricchi, Luca, Dalton, Marika P.

“…Eruptions of intermediate magma may be explosive or effusive. The development of open system degassing has been proposed as a pre-requisite for effusion of…”
Get full text

Simulation of graphitic contacts to p‐type Si using a metal‐resistor‐semiconductor (M‐R‐S) model implemented in TCAD by Alnassar, M.S.N., Luong, S., Tran, H.N., Partridge, J.G., Holland, A.S.

“…In this paper, we describe simulations of highly rectifying carbon/p‐Si junctions using Sentaurus TCAD from Synopsys. 2‐D and 3‐D models were constructed and…”
Get full text

In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon by Bhaskaran, M., Sriram, S., Perova, T.S., Ermakov, V., Thorogood, G.J., Short, K.T., Holland, A.S.

“…This article reports on the in situ analysis of nickel silicide (NiSi) thin films formed by thermal processing of nickel thin films deposited on silicon…”
Get full text

Effect of multi-layered bottom electrodes on the orientation of strontium-doped lead zirconate titanate thin films by Bhaskaran, M., Sriram, S., Mitchell, D.R.G., Short, K.T., Holland, A.S.

“…This article discusses the results from X-ray diffraction (XRD) analysis of piezoelectric strontium-doped lead zirconate titanate (PSZT) thin films deposited…”
Get full text

SAW-based gas sensors with rf sputtered InOx and PECVD SiNx films: Response to H2 and O3 gases by Fechete, A C, Wlodarski, W, Kalantar-Zadeh, K, Holland, A S, Antoszewski, J, Kaciulis, S, Pandolfi, L

“…Surface acoustic wave (SAW)-based sensors, with InOx and SiNx layers on 36° YX LiTaO3 substrates were investigated for the detection of hydrogen (H2) and ozone…”
Get full text

Patterning of PLZT and PSZT thin films by excimer laser by Leech, P.W., Holland, A.S., Sriram, S., Bhaskaran, M.

“…The patterning of lanthanum-doped lead zirconate titanate (PLZT) and strontium-doped lead zirconate titanate (PSZT) thin films has been examined using a 5-ns…”
Get full text

Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques by Bhaskaran, M., Sriram, S., Holland, A.S., Evans, P.J.

“…This article discusses the formation and detailed materials characterisation of nickel silicide thin films. Nickel silicide thin films have been formed by…”
Get full text

Influence of oxygen partial pressure on the composition and orientation of strontium-doped lead zirconate titanate thin films by Sriram, S., Bhaskaran, M., du Plessis, J., Short, K.T., Sivan, V.P., Holland, A.S.

“…The influence of oxygen partial pressure during the deposition of piezoelectric strontium-doped lead zirconate titanate thin films is reported. The thin films…”
Get full text

SAW-based gas sensors with rf sputtered InO x and PECVD SiN x films: Response to H 2 and O 3 gases by Fechete, A.C., Wlodarski, W., Kalantar-Zadeh, K., Holland, A.S., Antoszewski, J., Kaciulis, S., Pandolfi, L.

“…Surface acoustic wave (SAW)-based sensors, with InO x and SiN x layers on 36° YX LiTaO 3 substrates were investigated for the detection of hydrogen (H 2) and…”
Get full text

Microstructural investigation of nickel silicide thin films and the silicide–silicon interface using transmission electron microscopy by Bhaskaran, M., Sriram, S., Mitchell, D.R.G., Short, K.T., Holland, A.S., Mitchell, A.

“…This article discusses the results of transmission electron microscopy (TEM)-based investigation of nickel silicide (NiSi) thin films grown on silicon. Nickel…”
Get full text

Thin film piezoelectric response characterisation using atomic force microscopy with standard contact mode imaging by Sriram, S., Bhaskaran, M., Short, K.T., Matthews, G.I., Holland, A.S.

“…This article introduces a technique for observing and quantifying the piezoelectric response of thin films, using standard atomic force microscopes (AFMs). The…”
Get full text

Ion beam etching of CVD diamond film in Ar, Ar/O2 and Ar/CF4 gas mixtures by Leech, P.W., Reeves, G.K., Holland, A.S., Shanks, F.

“…The Ar+ ion beam etching of diamond in the presence of O2 or CF4 gases was examined as a function of ion energy and gas composition. The details of etch rate…”
Get full text

Frequency Agile 90° Hybrid Coupler Using Barium Strontium Titanate Varactors by Fardin, E.A., Holland, A.S., Ghorbani, K.

“…This paper presents a tunable quadrature hybrid coupler realized using integrated lumped components. The centre frequency of the hybrid is tuned by controlling…”
Get full text

Effect of prior C, Si and Sn implantation on the etch rate of CVD diamond by Leech, P.W., Perova, T., Moore, R.A., Reeves, G.K., Holland, A.S., Ridgway, M.

“…Diamond films were implanted with C +, Si + or Sn + ions at multiple energies in order to generate a uniform layer of implantation-induced disorder. The…”
Get full text

New challenges to the modelling and electrical characterisation of ohmic contacts for ULSI devices by Holland, A.S, Reeves, G.K

“…Continuing developments in semiconductor process and materials technology have enabled significant reductions to be achieved in the contact resistance R c of…”
Get full text

Enhancement of the etch rate of CVD diamond by prior C and Ge implantation by Leech, P.W., Reeves, G.K., Holland, A.S., Ridgway, M.C., Shanks, F.

“…Polycrystalline diamond films have been irradiated with C+ or Ge+ ions at doses in the range 5×1013–5×1015 ions/cm2. Analysis of the implanted surfaces by…”
Get full text