Search Results - "Holländer, B."

Nanoscale magnonic Fabry-Pérot resonator for low-loss spin-wave manipulation by Qin, Huajun, Holländer, Rasmus B., Flajšman, Lukáš, Hermann, Felix, Dreyer, Rouven, Woltersdorf, Georg, van Dijken, Sebastiaan

“…Active control of propagating spin waves on the nanoscale is essential for beyond-CMOS magnonic computing. Here, we experimentally demonstrate reconfigurable…”
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Low-Loss Nanoscopic Spin-Wave Guiding in Continuous Yttrium Iron Garnet Films by Qin, Huajun, Holländer, Rasmus B., Flajšman, Lukáš, van Dijken, Sebastiaan

“…Long-distance transport and control of spin waves through nanochannels is essential for integrated magnonic technology. Current strategies relying on the…”
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Direct Bandgap Group IV Epitaxy on Si for Laser Applications by von den Driesch, N, Stange, D, Wirths, S, Mussler, G, Holländer, B, Ikonic, Z, Hartmann, J. M, Stoica, T, Mantl, S, Grützmacher, D, Buca, D

“…The recent observation of a fundamental direct bandgap for GeSn group IV alloys and the demonstration of low temperature lasing provide new perspectives on the…”
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Interaction of propagating spin waves with extended skyrmions by Mansell, Rhodri, Schaffers, Taddäus, Holländer, Rasmus B., Qin, Huajun, van Dijken, Sebastiaan

“…Active control of propagating short-wavelength spin waves in perpendicularly magnetized materials is promising for designing nanoscale magnonic devices. One…”
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Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors by Wirths, S., Tiedemann, A. T., Ikonic, Z., Harrison, P., Holländer, B., Stoica, T., Mussler, G., Myronov, M., Hartmann, J. M., Grützmacher, D., Buca, D., Mantl, S.

“…In this letter, we propose a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely…”
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Tensely strained GeSn alloys as optical gain media by Wirths, S., Ikonic, Z., Tiedemann, A. T., Holländer, B., Stoica, T., Mussler, G., Breuer, U., Hartmann, J. M., Benedetti, A., Chiussi, S., Grützmacher, D., Mantl, S., Buca, D.

“…This letter presents the epitaxial growth and characterization of a heterostructure for an electrically injected laser, based on a strained GeSn active well…”
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SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications by Wirths, S., Buca, D., Ikonic, Z., Harrison, P., Tiedemann, A.T., Holländer, B., Stoica, T., Mussler, G., Breuer, U., Hartmann, J.M., Grützmacher, D., Mantl, S.

“…In this contribution, we propose a laser concept based on a double heterostructure consisting of tensile strained Ge as the active medium and SiGeSn ternaries…”
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Measurement of the band offsets between amorphous LaAlO3 and silicon by Edge, L. F., Schlom, D. G., Chambers, S. A., Cicerrella, E., Freeouf, J. L., Holländer, B., Schubert, J.

“…The conduction and valence band offsets between amorphous LaAlO3 and silicon have been determined from x-ray photoelectron spectroscopy measurements. These…”
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Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition by Rauwel, E., Dubourdieu, C., Holländer, B., Rochat, N., Ducroquet, F., Rossell, M. D., Van Tendeloo, G., Pelissier, B.

“…Addition of yttrium in HfO2 thin films prepared on silicon by metal organic chemical vapor deposition is investigated in a wide compositional range…”
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Quaternary Enhancement-Mode HFET With In Situ SiN Passivation by Ketteniss, N., Behmenburg, H., Hahn, H., Noculak, A., Hollander, B., Kalisch, H., Heuken, M., Vescan, A.

“…A lattice-matched InAlGaN/GaN heterostructure with a barrier-layer thickness of 4 nm has been grown and passivated in situ with a 63-nm SiN by metal-organic…”
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Morphology, growth mode and indium incorporation of MOVPE grown InGaN and AlInGaN: A comparison by Ahl, J.-P., Hertkorn, J., Koch, H., Galler, B., Michel, B., Binder, M., Holländer, B.

“…We compared InGaN- and AlInGaN-layers grown by metal-organic vapor phase epitaxy (MOVPE) in terms of morphology, growth mode and indium incorporation. The…”
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Boron-doped hydrogenated microcrystalline silicon oxide (μc-SiOx:H) for application in thin-film silicon solar cells by Lambertz, A., Finger, F., Holländer, B., Rath, J.K., Schropp, R.E.I.

“…We report on the development of p-type μc-SiOx:H material, in particular the relationship between the deposition parameters and the material properties like…”
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Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers by Reuters, Benjamin, Wille, A., Ketteniss, N., Hahn, H., Holländer, B., Heuken, M., Kalisch, H., Vescan, A.

“…Group III nitride heterostructures with low polarization difference recently moved into the focus of research for realization of enhancement-mode (e-mode)…”
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Doped microcrystalline silicon oxide alloys for silicon-based photovoltaics: Optoelectronic properties, chemical composition, and structure studied by advanced characterization techniques by Smirnov, V., Lambertz, A., Moll, S., Bär, M., Starr, D. E., Wilks, R. G., Gorgoi, M., Heidt, A., Luysberg, M., Holländer, B., Finger, F.

“…Doped microcrystalline silicon oxide (μc‐SiOx:H) alloys attract significant attention as a functional material in photovoltaic devices. By using various…”
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Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6 by Wirths, S., Buca, D., Tiedemann, A.T., Bernardy, P., Holländer, B., Stoica, T., Mussler, G., Breuer, U., Mantl, S.

“…► Pseudomorphic SiGe growth at low temperature (450–600°C). ► Fully strained SiGe layers with Ge concentrations up to 53%. ► Highly B and P doped Si and SiGe…”
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Effect of film thickness and biaxial strain on the curie temperature of EuO by Melville, A., Mairoser, T., Schmehl, A., Birol, T., Heeg, T., Holländer, B., Schubert, J., Fennie, C. J., Schlom, D. G.

“…The effects of film thickness and epitaxial strain on the magnetic properties of commensurate EuO thin films grown on single crystalline (001)…”
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Laser synthesis of germanium tin alloys on virtual germanium by Stefanov, S., Conde, J. C., Benedetti, A., Serra, C., Werner, J., Oehme, M., Schulze, J., Buca, D., Holländer, B., Mantl, S., Chiussi, S.

“…Synthesis of heteroepitaxial germanium tin (GeSn) alloys using excimer laser processing of a thin 4nm Sn layer on Ge has been demonstrated and studied. Laser…”
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Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon by Edge, L. F., Schlom, D. G., Sivasubramani, P., Wallace, R. M., Holländer, B., Schubert, J.

“…Amorphous La Al O 3 thin films were deposited at room temperature directly on n -type and p -type Si (001) by molecular beam deposition. The dielectric…”
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Growth Studies on Quaternary AlInGaN Layers for HEMT Application by Reuters, Benjamin, Wille, A., Holländer, B., Sakalauskas, E., Ketteniss, N., Mauder, C., Goldhahn, R., Heuken, M., Kalisch, H., Vescan, A.

“…Quaternary barrier layers for GaN-based high-electron-mobility transistors (HEMT) have recently been a focus of interest because of the possible…”
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Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon by Edge, L. F., Schlom, D. G., Brewer, R. T., Chabal, Y. J., Williams, J. R., Chambers, S. A., Hinkle, C., Lucovsky, G., Yang, Y., Stemmer, S., Copel, M., Holländer, B., Schubert, J.

“…Amorphous LaAlO3 thin films have been deposited by molecular beam deposition directly on silicon without detectable oxidation of the underlying substrate. We…”
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