Search Results - "Holbert, K. E."

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  1. 1

    Sensors Based on Radiation-Induced Diffusion of Silver in Germanium Selenide Glasses by Dandamudi, Pradeep, Kozicki, M. N., Barnaby, H. J., Gonzalez-Velo, Y., Mitkova, M., Holbert, K. E., Ailavajhala, M., Yu, W.

    Published in IEEE transactions on nuclear science (01-12-2013)
    “…In this study we demonstrate the potential radiation sensing capabilities of a metal-chalcogenide glass (ChG) device. The lateral device senses…”
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  2. 2

    Flexible Ag-ChG Radiation Sensors: Limit of Detection and Dynamic Range Optimization Through Physical Design Tuning by Mahmud, A., Gonzalez-Velo, Y., Saremi, M., Barnaby, H. J., Kozicki, M. N., Holbert, K. E., Mitkova, M., Alford, T. L., Goryll, M., Yu, W., Mahalanabis, D., Chen, W., Chamele, N., Taggart, J.

    Published in IEEE transactions on nuclear science (01-08-2016)
    “…Silver-chalcogenide glass flexible sensors were tested to study the impact of physical design parameters on the performance characteristics of the sensors in…”
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  3. 3

    Effects of Cobalt-60 Gamma-Rays on Ge-Se Chalcogenide Glasses and Ag/Ge-Se Test Structures by Gonzalez-Velo, Y., Barnaby, H. J., Chandran, A., Oleksy, D. R., Dandamudi, P., Kozicki, M. N., Holbert, K. E., Mitkova, M., Ailavajhala, M., Chen, P.

    Published in IEEE transactions on nuclear science (01-12-2012)
    “…Solid state electrolytes fabricated with chalcogenide glass (ChG) are considered viable candidates for the next generation of non-volatile memory technologies…”
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  4. 4

    Total-Ionizing-Dose Effects on the Resistance Switching Characteristics of Chalcogenide Programmable Metallization Cells by Gonzalez-Velo, Y., Barnaby, H. J., Kozicki, M. N., Dandamudi, P., Chandran, A., Holbert, K. E., Mitkova, M., Ailavajhala, M.

    Published in IEEE transactions on nuclear science (01-12-2013)
    “…Programmable metallization cells (PMCs) are emerging ReRAM devices exhibiting resistance switching due to cation transport in a solid-state electrolyte and…”
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  5. 5

    Total Ionizing Dose Effects on Multistate HfOₓ-Based RRAM Synaptic Array by Han, X., Privat, A., Holbert, K. E., Seo, J., Yu, S., Barnaby, H. J.

    Published in IEEE transactions on nuclear science (01-05-2021)
    “…Emerging nonvolatile memories (eNVMs) have demonstrated satisfactory accuracy on various applications in deep learning. Characterized by high density and low…”
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  6. 6

    Impact of TID on the Analog Conductance and Training Accuracy of CBRAM-Based Neural Accelerator by Apsangi, P., Chamele, N., Barnaby, H. J., Gonzalez-Velo, Y., Holbert, K. E., Kozicki, M. N.

    Published in IEEE transactions on nuclear science (01-12-2023)
    “…The changes caused by total ionizing dose (TID) in the conductance of the analog response of Ag-Ge30Se70 conductive bridge random access memory (CBRAM) based…”
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  7. 7

    Analysis of Total Ionizing Dose Effects Using Electron Holography by Chang, C. T., Apsangi, P., Muthuseenu, K., Privat, A., Kennedy, B., McCartney, M. R., Smith, D. J., Holbert, K. E., Barnaby, H. J.

    Published in IEEE transactions on nuclear science (01-04-2024)
    “…The ability to directly image charge accumulation in the irradiated oxide film of the metal-oxide-semiconductor capacitor (MOSCAP) is demonstrated using the…”
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  8. 8

    Gamma radiation effects on indium-zinc oxide thin-film transistors by Indluru, A., Holbert, K.E., Alford, T.L.

    Published in Thin solid films (31-07-2013)
    “…The effect of gamma radiation on low-temperature fabricated indium–zinc–oxide (IZO) thin-film transistors (TFTs) has been investigated. A negative turn-on…”
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  9. 9

    Evidence of Interface Trap Build-Up in Irradiated 14-nm Bulk FinFET Technologies by Privat, A., Barnaby, H. J., Spear, M., Esposito, M., Manuel, J. E., Clark, L., Brunhaver, J., Duvnjak, A., Jokai, R., Holbert, K. E., McLain, M. L., Marinella, M. J., King, M. P.

    Published in IEEE transactions on nuclear science (01-05-2021)
    “…Total ionizing dose response of 14-nm bulk-Si FinFETs has been studied with a specially designed test chip. The radiation testing shows evidence of interface…”
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  10. 10

    Ionizing Radiation Effects on Nonvolatile Memory Properties of Programmable Metallization Cells by Taggart, J. L., Gonzalez-Velo, Y., Mahalanabis, D., Mahmud, A., Barnaby, H. J., Kozicki, M. N., Holbert, K. E., Mitkova, M., Wolf, K., Deionno, E., White, A. L.

    Published in IEEE transactions on nuclear science (01-12-2014)
    “…The impact of ionizing radiation on the retention and endurance of programmable metallization cells (PMC) ReRAM cells is investigated and presented for the…”
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  11. 11

    Flexible Sensors Based on Radiation-Induced Diffusion of Ag in Chalcogenide Glass by Dandamudi, P., Mahmud, A., Gonzalez-Velo, Y., Kozicki, M. N., Barnaby, H. J., Roos, B., Alford, T. L., Ailavajhala, M., Mitkova, M., Holbert, K. E.

    Published in IEEE transactions on nuclear science (01-12-2014)
    “…In this paper, previous work on chalcogenide-glass (ChG)-based radiation sensors is extended to include the effects of mechanical strain and temperature stress…”
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  12. 12

    Total Ionizing Dose Tolerance of - based Programmable Metallization Cells by Dandamudi, P., Kozicki, M. N., Barnaby, H. J., Gonzalez-Velo, Y., Holbert, K. E.

    Published in IEEE transactions on nuclear science (01-08-2014)
    “…Programmable Metallization Cells (PMC) are two-terminal elements that exhibit resistance switching based on the combination of bias dependent ion conduction…”
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  13. 13

    Strategies, Challenges and Prospects for Active Learning in the Computer-Based Classroom by Holbert, Keith E., Karady, George G.

    Published in IEEE transactions on education (01-02-2009)
    “…The introduction of computer-equipped classrooms into engineering education has brought with it a host of opportunities and issues. Herein, some of the…”
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  14. 14

    The Effects of Hydrogen on the Enhanced Low Dose Rate Sensitivity (ELDRS) of Bipolar Linear Circuits by Pease, R.L., Adell, P.C., Rax, B.G., Xiao Jie Chen, Barnaby, H.J., Holbert, K.E., Hjalmarson, H.P.

    Published in IEEE transactions on nuclear science (01-12-2008)
    “…It is experimentally demonstrated with test transistors and circuits that hydrogen is correlated with enhanced low dose rate sensitivity (ELDRS) in bipolar…”
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  15. 15

    Enhanced TID Susceptibility in Sub-100 nm Bulk CMOS I/O Transistors and Circuits by McLain, M., Barnaby, H.J., Holbert, K.E., Schrimpf, R.D., Shah, H., Amort, A., Baze, M., Wert, J.

    Published in IEEE transactions on nuclear science (01-12-2007)
    “…This paper evaluates the radiation responses of 2.5 V I/O transistors and regular-threshold MOSFETs from a 90 nm commercial bulk CMOS technology. The data…”
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  16. 16

    Modeling the Dose Rate Response and the Effects of Hydrogen in Bipolar Technologies by Chen, X.J., Barnaby, H.J., Adell, P., Pease, R.L., Vermeire, B., Holbert, K.E.

    Published in IEEE transactions on nuclear science (01-12-2009)
    “…A physical model describing the dose rate response and the effect of hydrogen in bipolar technologies is presented. The model uses electron-hole pair…”
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  17. 17

    Optimizing Radiation Hard by Design SRAM Cells by Clark, L.T., Mohr, K.C., Holbert, K.E., Xiaoyin Yao, Knudsen, J., Shah, H.

    Published in IEEE transactions on nuclear science (01-12-2007)
    “…Various radiation hardened by design SRAM cells are explored for their size, electrical performance, and total ionizing dose (TID) immunity. TID experiments…”
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  18. 18

    Embedding remote experimentation in power engineering education by Albu, M.M., Holbert, K.E., Heydt, G.T., Grigorescu, S.D., Trusca, V.

    Published in IEEE transactions on power systems (01-02-2004)
    “…Engineering education by its nature is a costly program in university environments. Perhaps the most costly component is the laboratory facility, usually…”
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  19. 19

    The Impact of Total Ionizing Dose on Unhardened SRAM Cell Margins by Xiaoyin Yao, Hindman, N., Clark, L.T., Holbert, K.E., Alexander, D.R., Shedd, W.M.

    Published in IEEE transactions on nuclear science (01-12-2008)
    “…Static random access memory (SRAM) cells have diminishing read and write margins due to fabrication variations. These variations are a direct result of the…”
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  20. 20

    Measurement of radioactivity in Arizona groundwater using improved analytical techniques for samples with high dissolved solids by Holbert, K E, Stewart, B D, Eshraghi, P

    Published in Health physics (1958) (01-02-1995)
    “…Radiochemical analyses of 667 samples collected over the 5-y period 1989 to 1993 indicate that approximately 2% of Arizona drinking water supplies from…”
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