Search Results - "Hoke, W.E."

Monolithic integration of InP-based transistors on Si substrates using MBE by Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Bulsara, M.T., Fitzgerald, E.A., Urteaga, M., Ha, W., Bergman, J., Brar, B., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E., Clark, D., Smith, D., Thompson, R.F., Drazek, C., Daval, N.

“…We report on a direct epitaxial growth approach for the heterogeneous integration of high-speed III–V devices with Si CMOS logic on a common Si substrate…”
Get full text

AlGaN/GaN HEMT With 300-GHz f by Chung, J.W., Hoke, W.E., Chumbes, E.M., Palacios, T.

“…We report on a gate-recessed AlGaN/GaN high-electron mobility transistor (HEMT) on a SiC substrate with a record power-gain cutoff frequency (f max ). To…”
Get full text

Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes by Jae-Hyung Jang, Cueva, G., Hoke, W.E., Lemonias, P.J., Fay, P., Adesida, I.

“…High-speed metamorphic double heterojunction photodiodes were fabricated on GaAs substrates for long-wavelength optical fiber communications. The high quality…”
Get full text

40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology by Zhang, Y., Whelan, C.S., Leoni, R., Marsh, P.F., Hoke, W.E., Hunt, J.B., Laighton, C.M., Kazior, T.E.

“…An optoelectronic integrated circuit operating in the 1.55-μm wavelength range was realized on GaAs substrate through metamorphic technology. High indium…”
Get full text

High performance 0.35 /spl mu/m gate-length monolithic enhancement/depletion-mode metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrates by Dumka, D.C., Hoke, W.E., Lemonias, P.J., Cueva, G., Adesida, I.

Get full text

Wavelength dependent characteristics of high-speed metamorphic photodiodes by Jang, J.H., Cueva, G., Sankaralingam, R., Fay, P., Hoke, W.E., Adesida, I.

“…Double-heterojunction photodiodes based on GaAs metamorphic growth technology are described. The effect of the large bandgap InAlAs layer incorporated in the…”
Get full text

Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates by Whelan, C.S., Kazior, T.E., Marsh, P.F., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Lemonias, P.J., Lardizabal, S.M., Leoni, R.E., Lichwala, S.J.

“…This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs…”
Get full text

The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes by Jang, J.H., Cueva, G., Dumka, D.C., Hoke, W.E., Lemonias, P.J., Fay, P., Adesida, I.

“…A comparative study of two types of metamorphic double heterojunction long-wavelength photodiodes on GaAs substrates is performed in terms of their bandwidths…”
Get full text

Long-wavelength In/sub 0.53/Ga/sub 0.47/As metamorphic p-i-n photodiodes on GaAs substrates by Jang, J.H., Cueva, G., Dumka, D.C., Hoke, W.E., Lemonias, P.J., Adesida, I.

“…Metamorphic In/sub 0.53/Ga/sub 0.47/As p-i-n photodiodes on GaAs substrate exhibiting the lowest dark current ever reported were fabricated and characterized…”
Get full text

High indium metamorphic HEMT on a GaAs substrate by Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Xu, C., Hsieh, K.C.

“…Metamorphic high electron mobility transistor structures with high indium content channel layers have been developed on GaAs substrates by solid source…”
Get full text

Long-wavelength In0.53Ga0.47As metamorphic p-i-n photodiodes on GaAs substrates by Jang, J.H, Cueva, G, Dumka, D.C, Hoke, W.E, Lemonias, P.J, Adesida, I

Get full text

High performance 0.35 [micro]m gate-length monolithic enhancement/depletion-mode metamorphic In0.52Al0.48As/In0.53Ga0.47 As HEMTs on GaAs substrates by Dumka, D.C, Hoke, W.E, Lemonias, P.J, Cueva, G, Adesida, I

Get full text

High performance 0.35 μm gate-length monolithic enhancement/depletion-mode metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrates by Dumka, D.C., Hoke, W.E., Lemonias, P.J., Cueva, G., Adesida, I.

“…Monolithic integration of enhancement (E)- and depletion (D)-mode metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/GaAs HEMTs with 0.35 μm…”
Get full text

Properties of metamorphic materials and device structures on GaAs substrates by Hoke, W.E., Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Lardizabal, S.M., Zhang, Y., Jang, J.H., Adesida, I., Xu, C., Hsieh, K.C.

“…Metamorphic layer structures grown on GaAs substrates have been characterized and fabricated into high quality electrical and optical devices. The root mean…”
Get full text

Thermal considerations for advanced SOI substrates designed for III-V/Si heterointegration by Yang, N., Bulsara, M.T., Fitzgerald, E.A., Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Urteaga, M., Ha, W., Bergman, J., Brar, B., Drazekd, C., Daval, N., Benaissa, L., Augendre, E., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E.

“…Silicon-on-lattice engineered substrates (SOLES) are SOI substrates with embedded Ge layers that facilitate III-V compound integration for advanced integrated…”
Get full text

Reliability of metamorphic HEMTs on GaAs substrates by Marsh, P.F, Whelan, C.S, Hoke, W.E, Leoni III, R.E, Kazior, T.E

“…Metamorphic HEMT (MHEMT) technology enables the growth of high indium content channels on GaAs substrates, giving them the performance of InP HEMTs. MHEMT…”
Get full text

Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates by Lubyshev, D., Liu, W. K., Stewart, T. R., Cornfeld, A. B., Fang, X. M., Xu, X., Specht, P., Kisielowski, C., Naidenkova, M., Goorsky, M. S., Whelan, C. S., Hoke, W. E., Marsh, P. F., Mirecki Millunchick, J., Svensson, S. P.

“…Plastic relaxation in metamorphic high electron mobility transistor (MHEMT) structures was investigated by x-ray reciprocal mapping and high-resolution…”
Get full text

MBE growth of InP-HBT structures on Ge-on-insulator/Si substrates by MBE by Lubyshev, D., Fastenau, J.M., Wu, Y., Liu, W.K., Urteaga, M., Ha, W., Bergman, J., Brar, B., Bulsara, M.T., Fitzgerald, E.A., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E.

“…MBE growth of InP-based HBTs on GeOI/Si substrates is described. A GaAs buffer is nucleated on the GeOI; then a graded InAlAs metamorphic buffer transitions…”
Get full text

GaAs metamorphic HEMT (MHEMT): an attractive alternative to InP HEMTs for high performance low noise and power applications by Whelan, C.S., Marsh, P.F., Hoke, W.E., McTaggart, R.A., McCarroll, C.P., Kazior, T.E.

“…Metamorphic HEMTs (MHEMTs) are becoming the device of choice for low cost millimeter-wave applications, where a high indium content channel is necessary for…”
Get full text

Low noise metamorphic HEMT devices and amplifiers on GaAs substrates by Marsh, P.F., Chu, S.L.G., Lardizabal, S.M., Leoni, R.E., Kang, S., Wohlert, R., Bowlby, A.M., Hoke, W.E., McTaggart, R.A., Whelan, C.S., Lemonias, P.J., McIntosh, P.M., Kazior, T.E.

“…Excellent noise (0.41 dB minimum noise figure with 11.5 dB associated gain at 18 GHz) and linearity (third order intercept point of 37.6 dBm at 42.5 mW DC…”
Get full text