In-situ X-ray imaging of III–V strained-layer relaxation processes

The important value of the X-ray topography (XRT) technique for the investigation of III–V strained-layer relaxation processes is described. In addition to post-growth ex-situ XRT studies, a unique combined XRT/MBE growth facility has been constructed which allows the generation, motion and interact...

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Bibliographic Details
Published in:	Journal of crystal growth Vol. 150; no. 1-4; pp. 85 - 91
Main Authors:	Whitehouse, C.R., Cullis, A.G., Barnett, S.J., Usher, B.F., Clark, G.F., Keir, A.M., Tanner, B.K., Lunn, B., Hogg, J.C.H., Johnson, A.D., Lacey, G., Spirkl, W., Hagston, W.E., Jefferson, J.H., Ashu, P., Smith, G.W., Martin, T.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Amsterdam Elsevier B.V 1995 Elsevier
Subjects:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Gallium arsenides Dislocation motion Inorganic compounds Misfit dislocations Ternary compounds Crystal growth from vapors Experimental study Dislocation interaction Indium arsenides Stress relaxation Strained layer Molecular beam epitaxy X-ray topography III-V semiconductors
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Summary:	The important value of the X-ray topography (XRT) technique for the investigation of III–V strained-layer relaxation processes is described. In addition to post-growth ex-situ XRT studies, a unique combined XRT/MBE growth facility has been constructed which allows the generation, motion and interaction of misfit dislocations to be monitored in-situ during epilayer growth, for the first time. The in-situ data already obtained for (100) InGaAs strained-layer growth on both Czochralski- and vertical-gradient freeze-grown GaAs substrates indicates technologically important differences in the initial relaxation process, including, in the latter case, the observation of a previously unreported secondary relaxation phase. Initial results relating to the influence of both post-growth annealing and the subsequent cool-down process are also described.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/0022-0248(95)80186-G