Search Results - "Hofsäss, H"

Simulation of ion beam sputtering with SDTrimSP, TRIDYN and SRIM by HOFSÄSS, H, ZHANG, K, MUTZKE, A

“…A quantitative simulation of ion beam sputtering and related collision cascade effects is essential for applications of ion beam irradiation in thin film…”
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Ion Implantation of GrapheneToward IC Compatible Technologies by Bangert, U, Pierce, W, Kepaptsoglou, D. M, Ramasse, Q, Zan, R, Gass, M. H, Van den Berg, J. A, Boothroyd, C. B, Amani, J, Hofsäss, H

“…Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for…”
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Using radioactive beams to unravel local phenomena in ferroic and multiferroic materials by Schell, J., Hofsäss, H., Lupascu, D.C.

“…The increasing interest in using ferroic and multiferroic materials in high-tech applications requires that the underlying physical phenomena are studied at…”
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Propagation of ripple patterns on Si during ion bombardment by Hofsäss, H., Zhang, K., Gehrke, H. G., Brüsewitz, C.

“…The lateral propagation of surface ripples on Si, generated by Xe ion irradiation with and without codeposition of Fe surfactant atoms, was investigated by…”
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External RBS analysis setup at University of Göttingen: RBS analysis for liquid samples by Saito, M., Holm, K., Bregolin, F. L., Hofsäss, H.

“…In this work, we describe new developments in the external analysis setup at University of Göttingen. The aim of this work is to expand the ability of the…”
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Electrical conduction of ion tracks in tetrahedral amorphous carbon: temperature, field and doping dependence and comparison with matrix data by Krauser, J, Gehrke, H-G, Hofsäss, H, Amani, J, Trautmann, C, Weidinger, A

“…This paper gives an extended overview of the electrical properties of ion tracks in hydrogen-free tetrahedral amorphous carbon (ta-C) with a sp3 bond fraction…”
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Ion-beam modification of 2-D materials - single implant atom analysis via annular dark-field electron microscopy by Bangert, U., Stewart, A., O’Connell, E., Courtney, E., Ramasse, Q., Kepaptsoglou, D., Hofsäss, H., Amani, J., Tu, J.-S., Kardynal, B.

“…Functionalisation of two-dimensional (2-D) materials via low energy ion implantation could open possibilities for fabrication of devices based on such…”
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The role of phase separation for self-organized surface pattern formation by ion beam erosion and metal atom co-deposition by Hofsäss, H., Zhang, K., Pape, A., Bobes, O., Brötzmann, M.

“…We investigate the ripple pattern formation on Si surfaces at room temperature during normal incidence ion beam erosion under simultaneous deposition of…”
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Short-range ordering of ion-implanted nitrogen atoms in SiC-graphene by Willke, P., Amani, J. A., Thakur, S., Weikert, S., Druga, T., Maiti, K., Hofsäss, H., Wenderoth, M.

“…We perform a structural analysis of nitrogen-doped graphene on SiC(0001) prepared by ultra low-energy ion bombardment. Using scanning tunneling microscopy, we…”
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Stopping power of liquid water for carbon ions in the energy range between 1 MeV and 6 MeV by Rahm, J M, Baek, W Y, Rabus, H, Hofsäss, H

“…The stopping power of liquid water was measured for the first time for carbon ions in the energy range between 1 and 6 MeV using the inverted Doppler shift…”
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Nano-hillock formation in diamond-like carbon induced by swift heavy projectiles in the electronic stopping regime: Experiments and atomistic simulations by Schwen, D., Bringa, E., Krauser, J., Weidinger, A., Trautmann, C., Hofsäss, H.

“…The formation of surface hillocks in diamond-like carbon is studied experimentally and by means of large-scale molecular dynamics simulations with 5 × 106…”
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Sharp transition from ripple patterns to a flat surface for ion beam erosion of Si with simultaneous co-deposition of iron by Zhang, K., Brötzmann, M., Hofsäss, H.

“…We investigate pattern formation on Si by sputter erosion under simultaneous co-deposition of Fe atoms, both at off-normal incidence, as function of the Fe…”
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p -type conduction in beryllium-implanted hexagonal boron nitride films by He, B., Zhang, W. J., Yao, Z. Q., Chong, Y. M., Yang, Y., Ye, Q., Pan, X. J., Zapien, J. A., Bello, I., Lee, S. T., Gerhards, I., Zutz, H., Hofsäss, H.

“…p -type conduction in hexagonal boron nitride (hBN) films was achieved by beryllium implantation and subsequent rapid thermal annealing treatment. The…”
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Morphology of Si surfaces sputter-eroded by low-energy Xe-ions at glancing incident angle by Zhang, K., Hofsäss, H., Rotter, F., Uhrmacher, M., Ronning, C., Krauser, J.

“…Sputter erosion of Si generates nanoscale ripple patterns which are stable at ambient conditions and which may serve as an experimental test of ripple…”
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Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties by Popović, M., Novaković, M., Traverse, A., Zhang, K., Bibić, N., Hofsäss, H., Lieb, K.P.

“…Polycrystalline titanium nitride (TiN) layers of 240nm thickness and columnar microstructure were deposited at 150°C by d.c. reactive sputtering on Si(100)…”
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Ion beam synthesis of boron carbide thin films by Ronning, C, Schwen, D, Eyhusen, S, Vetter, U, Hofsäss, H

“…We have grown boron carbide (B x C) thin films via direct ion beam deposition using mass selected 11B + and 12C + ions. The films were deposited on silicon and…”
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Cylindrical spike model for the formation of diamondlike thin films by ion deposition by HOFSÄSS, H, FELDERMANN, H, MERK, R, SEBASTIAN, M, RONNING, C

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Unambiguous identification of the PL-I9 line in zinc oxide by Müller, S., Stichtenoth, D., Uhrmacher, M., Hofsäss, H., Ronning, C., Röder, J.

“…Radioactive In111 atoms implanted into zinc oxide (ZnO) single crystals occupy substitutional Zn lattice sites after annealing to 700°C. The respective…”
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Pattern formation of Si surfaces by low-energy sputter erosion by Zhang, K., Rotter, F., Uhrmacher, M., Ronning, C., Hofsäss, H., Krauser, J.

“…The evolution of silicon surfaces has been investigated using atomic force microscopy after low-energy (≤ 50 keV) Xe + ion irradiation at room temperature with…”
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On the mechanisms of cubic boron nitride film growth by Hofsäss, H., Eyhusen, S., Ronning, C.

“…Cubic boron nitride (c-BN) is the most attractive BN allotrope due to its outstanding physical and chemical properties. Deposition of c-BN films is typically…”
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