Search Results - "Hofmann, V.S."

Predictive simulation of the water-energy-food nexus for the City of Cape Town by Egieya, J.M., Parker, Y., Hofmann, V.S., Daher, B., Gorgens, J., Goosen, N.J.

“…The City of Cape Town (CoCT), South Africa faced a critical situation between 2015 and 2018 in which the municipal water supply was almost completely…”
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Modification of the Ge(001) subsurface electronic structure after adsorption of Sn by Reichmann, Felix, Becker, Andreas P., Hofmann, Emily V.S., Curson, Neil J., Klesse, Wolfgang M., Capellini, Giovanni

“…[Display omitted] •Atomic configurations beneath the 1st and 2nd Sn layer on Ge(001) are revealed.•The initial stages of the Schottky barrier formation are…”
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Onconeuronal cerebellar degeneration-related antigen, Cdr2, is strongly expressed in papillary renal cell carcinoma and leads to attenuated hypoxic response by Balamurugan, K, Luu, V-D, Kaufmann, M R, Hofmann, V S, Boysen, G, Barth, S, Bordoli, M R, Stiehl, D P, Moch, H, Schraml, P, Wenger, R H, Camenisch, G

“…The onconeuronal cerebellar degeneration-related antigen Cdr2 is associated with paraneoplastic syndromes. Neoplastic expression of Cdr2 in ovary and breast…”
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Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy by Stock, Taylor J. Z, Warschkow, Oliver, Constantinou, Procopios C, Li, Juerong, Fearn, Sarah, Crane, Eleanor, Hofmann, Emily V. S, Kölker, Alexander, McKenzie, David R, Schofield, Steven R, Curson, Neil J

“…Over the past two decades, prototype devices for future classical and quantum computing technologies have been fabricated by using scanning tunneling…”
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New insights into the electronic states of the Ge(001) surface by joint angle-resolved photoelectron spectroscopy and first-principle calculation investigation by Reichmann, Felix, Scalise, Emilio, Becker, Andreas P., Hofmann, Emily V.S., Dabrowski, Jaroslaw, Montalenti, Francesco, Miglio, Leo, Mulazzi, Mattia, Klesse, Wolfgang M., Capellini, Giovanni

“…[Display omitted] •ARPES on Ge(001) shows the occupation of the surface conduction band minimum at RT.•Temperature-dependent ARPES proves the occupation by…”
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The formation of a Sn monolayer on Ge(100) studied at the atomic scale by Hofmann, Emily V.S., Scalise, Emilio, Montalenti, Francesco, Stock, Taylor J.Z., Schofield, Steven R., Capellini, Giovanni, Miglio, Leo, Curson, Neil J., Klesse, Wolfgang M.

“…[Display omitted] •An atomically flat GeSn wetting-layer can be grown on Ge(100).•Ge intermixing with the GeSn layer is minimal (<2%).•Room temperature Sn…”
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Ge(001) surface reconstruction with Sn impurities by Noatschk, K., Hofmann, E.V.S., Dabrowski, J., Curson, N.J., Schroeder, T., Klesse, W.M., Seibold, G.

“…•First principle calculation for the Ge(001) surface•Ising-type model, with interaction constants taken from density functional theory.•Stability of the…”
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