Search Results - "Hoelscher, John. E."

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    Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE) by Park, Jeongho, Mitchel, William C., Grazulis, Lawrence, Smith, Howard E., Eyink, Kurt G., Boeckl, John J., Tomich, David H., Pacley, Shanee D., Hoelscher, John. E.

    Published in Advanced materials (Weinheim) (01-10-2010)
    “…A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high‐quality and large‐area epitaxial graphene. This method…”
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  2. 2

    Band gap formation in graphene by in-situ doping by Park, Jeongho, Mitchel, W. C., Brown, Gail J., Elhamri, Said, Grazulis, Lawrence, Smith, Howard E., Pacley, Shanee D., Boeckl, John J., Eyink, Kurt G., Mou, Shin, Tomich, David H., Hoelscher, John E.

    Published in Applied physics letters (16-05-2011)
    “…We report the formation of band gaps in as-grown stacks of epitaxial graphene with opposite doping. Control of in-situ doping during carbon source molecular…”
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    Journal Article