Search Results - "Hobart, Karl"

Integration of polycrystalline Ga2O3 on diamond for thermal management by Cheng, Zhe, Wheeler, Virginia D., Bai, Tingyu, Shi, Jingjing, Tadjer, Marko J., Feygelson, Tatyana, Hobart, Karl D., Goorsky, Mark S., Graham, Samuel

“…Gallium oxide (Ga2O3) has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and…”
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Experimental observation of localized interfacial phonon modes by Cheng, Zhe, Li, Ruiyang, Yan, Xingxu, Jernigan, Glenn, Shi, Jingjing, Liao, Michael E., Hines, Nicholas J., Gadre, Chaitanya A., Idrobo, Juan Carlos, Lee, Eungkyu, Hobart, Karl D., Goorsky, Mark S., Pan, Xiaoqing, Luo, Tengfei, Graham, Samuel

“…Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon…”
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Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation by Yuhao Zhang, Zhihong Liu, Tadjer, Marko J., Min Sun, Piedra, Daniel, Hatem, Christopher, Anderson, Travis J., Luna, Lunet E., Nath, Anindya, Koehler, Andrew D., Okumura, Hironori, Jie Hu, Xu Zhang, Xiang Gao, Feigelson, Boris N., Hobart, Karl D., Palacios, Tomas

“…This letter demonstrates vertical GaN junction barrier Schottky (JBS) rectifiers fabricated with novel ion implantation techniques. We used two different…”
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Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties by Anaya, Julian, Rossi, Stefano, Alomari, Mohammed, Kohn, Erhard, Tóth, Lajos, Pécz, Béla, Hobart, Karl D., Anderson, Travis J., Feygelson, Tatyana I., Pate, Bradford B., Kuball, Martin

“…The in-plane thermal conductivity of polycrystalline diamond near its nucleation site, which is a key parameter to an efficient integration of diamond in…”
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Structural transition and recovery of Ge implanted β-Ga2O3 by Anber, Elaf A., Foley, Daniel, Lang, Andrew C., Nathaniel, James, Hart, James L., Tadjer, Marko J., Hobart, Karl D., Pearton, Stephen, Taheri, Mitra L.

“…Ion implantation-induced effects were studied in Ge implanted β-Ga2O3 with the fluence and energy of 3 × 1013 cm−2/60 keV, 5 × 1013 cm−2/100 keV, and 7 × 1013…”
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Tunable Thermal Energy Transport across Diamond Membranes and Diamond–Si Interfaces by Nanoscale Graphoepitaxy by Cheng, Zhe, Bai, Tingyu, Shi, Jingjing, Feng, Tianli, Wang, Yekan, Mecklenburg, Matthew, Li, Chao, Hobart, Karl D, Feygelson, Tatyana I, Tadjer, Marko J, Pate, Bradford B, Foley, Brian M, Yates, Luke, Pantelides, Sokrates T, Cola, Baratunde A, Goorsky, Mark, Graham, Samuel

“…The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing…”
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GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging by Tadjer, Marko J., Anderson, Travis J., Ancona, Mario G., Raad, Peter E., Komarov, Pavel, Bai, Tingyu, Gallagher, James C., Koehler, Andrew D., Goorsky, Mark S., Francis, Daniel A., Hobart, Karl D., Kub, Fritz J.

“…Record DC power has been demonstrated in AlGaN/GaN high electron mobility transistors fabricated using a substrate replacement process in which a thick diamond…”
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Detecting defects that reduce breakdown voltage using machine learning and optical profilometry by Gallagher, James C., Mastro, Michael A., Jacobs, Alan G., Kaplar, Robert. J., Hobart, Karl D., Anderson, Travis J.

“…Semiconductor wafer manufacturing relies on the precise control of various performance metrics to ensure the quality and reliability of integrated circuits. In…”
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Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations by Nelson, Tolen, Pandey, Prakash, Georgiev, Daniel G., Hontz, Michael R., Koehler, Andrew D., Hobart, Karl D., Anderson, Travis J., Ildefonso, Adrian, Khanna, Raghav

“…This work examines a new hybrid edge termination structure for vertical GaN diodes. The hybrid JTE-GR termination consists of superimposed guard rings (GRs)…”
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Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3 by Fares, Chaker, Ren, F., Hays, David C., Gila, B. P., Tadjer, Marko, Hobart, Karl D., Pearton, S. J.

“…Thin films of copper iodide (CuI) were grown on (-201) bulk Ga2O3 and (010) epitaxial (Al0.14Ga0.86)2O3 using a copper film iodination reaction method. The…”
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Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques by Gallagher, James C., Ebrish, Mona A., Porter, Matthew A., Jacobs, Alan G., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Anderson, Travis J.

“…To improve the manufacturing of vertical GaN devices for power electronics applications, the effects of defects in GaN substrates need to be better understood…”
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Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility by Spencer, Joseph A., Tadjer, Marko J., Jacobs, Alan G., Mastro, Michael A., Lyons, John L., Freitas, Jaime A., Gallagher, James C., Thieu, Quang T., Sasaki, Kohei, Kuramata, Akito, Zhang, Yuhao, Anderson, Travis J., Hobart, Karl D.

“…Activation of implanted donors into a highly-resistive, nitrogen-doped homoepitaxial β-Ga2O3 has been investigated. Nitrogen acceptors with the concentration…”
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PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates by Spencer, Joseph A., Jacobs, Alan G., Hobart, Karl D., Koehler, Andrew D., Anderson, Travis J., Zhang, Yuhao, Tadjer, Marko J.

“…Platinum oxide (PtO x ) Schottky contacts on degenerately doped β -Ga 2 O 3 substrates show an increased barrier height of 85% and 64% when compared to nickel…”
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High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates by Helou, Assaad El, Komarov, Pavel, Tadjer, Marko Jak, Anderson, Travis J., Francis, Daniel A., Feygelson, Tatyana, Pate, Bradford B., Hobart, Karl D., Raad, Peter E.

“…Gallium nitride (GaN) high electron-mobility transistors (HEMTs) offer considerable high-power operation but suffer in reliability due to potentially damaging…”
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Substrate-Dependent Effects on the Response of AlGaN/GaN HEMTs to 2-MeV Proton Irradiation by Anderson, Travis J., Koehler, Andrew D., Greenlee, Jordan D., Weaver, Bradley D., Mastro, Michael A., Hite, Jennifer K., Eddy, Charles R., Kub, Francis J., Hobart, Karl D.

“…AlGaN/GaN high electron mobility transistors grown on Si, SiC, and sapphire substrates were exposed to 2-MeV proton irradiation in incremental fluences up to 6…”
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Using machine learning with optical profilometry for GaN wafer screening by Gallagher, James C., Mastro, Michael A., Ebrish, Mona A., Jacobs, Alan G., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Anderson, Travis J.

“…To improve the manufacturing process of GaN wafers, inexpensive wafer screening techniques are required to both provide feedback to the manufacturing process…”
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Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging by Lundh, James Spencer, Pavlidis, Georges, Sasaki, Kohei, Centrone, Andrea, Spencer, Joseph A., Masten, Hannah N., Currie, Marc, Jacobs, Alan G., Konishi, Keita, Kuramata, Akito, Hobart, Karl D., Anderson, Travis J., Tadjer, Marko J.

“…This work demonstrates direct, rapid 2D thermal mapping measurement capabilities of the ultrawide bandgap semiconductor channel of lateral…”
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Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance by Pandey, Prakash, Nelson, Tolen M., Hontz, Michael R., Georgiev, Daniel G., Khanna, Raghav, Jacobs, Alan G., Lundh, James S., Gallagher, James C., Koehler, Andrew D., Hobart, Karl D., Anderson, Travis J.

“…This study presents empirical validation of a simulated novel hybrid edge termination (HET) structure with planar ion implantation processing for vertical…”
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Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation by Jacobs, Alan G., Spencer, Joseph A., Hite, Jennifer K., Hobart, Karl D., Anderson, Travis J., Feigelson, Boris N.

“…Codoping of gallium nitride for improved acceptor ionization has long been theorized; however, reduction to practice proves difficult via growth. Herein,…”
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A Simple Edge Termination Design for Vertical GaN P-N Diodes by Pandey, Prakash, Nelson, Tolen M., Collings, William M., Hontz, Michael R., Georgiev, Daniel G., Koehler, Andrew D., Anderson, Travis J., Gallagher, James C., Foster, Geoffrey M., Jacobs, Alan, Ebrish, Mona A., Gunning, Brendan P., Kaplar, Robert J., Hobart, Karl D., Khanna, Raghav

“…Vertical power devices require significant attention to their edge termination designs to obtain higher breakdown voltages without substantial increase in…”
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