Search Results - "Hlushchenko, Daria"
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Stability of mechanically exfoliated layered monochalcogenides under ambient conditions
Published in Scientific reports (04-11-2023)“…Monochalcogenides of groups III (GaS, GaSe) and VI (GeS, GeSe, SnS, and SnSe) are materials with interesting thickness-dependent characteristics, which have…”
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Experimental and theoretical studies of native deep-level defects in transition metal dichalcogenides
Published in NPJ 2D materials and applications (29-10-2022)“…Transition metal dichalcogenides (TMDs), especially in two-dimensional (2D) form, exhibit many properties desirable for device applications. However, device…”
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Electro-modulation and surface photovoltage spectroscopy with semi-transparent graphene electrodes
Published in Applied surface science (15-03-2023)“…Investigating the fundamental properties of new semiconductor materials and structures requires the use of a wide range of optical spectroscopy techniques…”
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Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications
Published in ACS applied materials & interfaces (30-10-2024)“…The Fermi level position at the interface of a heterostructure is a critical factor for device functionality, strongly influenced by surface-related phenomena…”
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Waveguide-Coupled Light Photodetector Based on Two-Dimensional Molybdenum Disulfide
Published in ACS applied materials & interfaces (25-05-2024)“…The integration of transition metal dichalcogenides with photonic structures such as sol–gel SiO x :TiO y optical waveguides (WGs) makes possible the…”
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Experimental and theoretical studies of native deep-level defects in transition metal dichalcogenides
Published in NPJ 2D materials and applications (29-10-2022)“…Abstract Transition metal dichalcogenides (TMDs), especially in two-dimensional (2D) form, exhibit many properties desirable for device applications. However,…”
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Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a‐Plane Walls
Published in Advanced optical materials (01-03-2021)“…Nano‐ and micro‐rods of GaN offer many functionalities that are not present in regular flat nanostructures. Therefore, development of new growth methods of…”
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