Search Results - "Hisanori, Ihara"

Improvement of hydrogenated amorphous silicon n-i-p diode performance by H2 plasma treatment for i/p interface by IHARA, H, NOZAKI, H

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Hg-sensitized photochemical vapor deposition application to hydrogenated amorphous silicon photoconversion layer overlaid on charge coupled device by NOZAKI, H, SAKUMA, N, NIIYAMA, T, IHARA, H, ISHIZUKA, Y, ICHINOSE, H, IIDA, Y, SASAKI, M, MANABE, S

“…An Hg-sensitized photochemical vapor deposition method has been developed which has enabled a hydrogenated amorphous silicon photoconversion layer to be…”
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Low-leakage-current and low-operating-voltage buried photodiode for a CMOS imager by Inoue, I., Tanaka, N., Yamashita, H., Yamaguchi, T., Ishiwata, H., Ihara, H.

“…A low-leakage current and low-operating-voltage buried-photodiode structure of CMOS image sensors has been developed. The new structure adopted a modified…”
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The Staebler-Wronski effect in hydro-fluorinated amorphous silicon prepared using the intermediate species SiF2 by UESUGI, T, IHARA, H, MATSUMURA, H

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Dependency of boron doping efficiency on hydrogen flow rate in hydro-fluorinated amorphous silicon by IHARA, H, UESUGI, T, MATSUMURA, H

“…Boron-doping properties of hydro-fluorinated amorphous silicon (a-Si:F:H) films, produced by a glow-discharge decomposition of intermediate species SiF 2 and H…”
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Properties of hydro-fluorinated amorphous silicon-carbide produced by intermediate species SiF2 by UESUGI, T, IHARA, H, MATSUMURA, H

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7.1 A 1/4-inch 8Mpixel CMOS image sensor with 3D backside-illuminated 1.12μm pixel with front-side deep-trench isolation and vertical transfer gate by JungChak Ahn, Kyungho Lee, Yitae Kim, Heegeun Jeong, Bumsuk Kim, Hongki Kim, Jongeun Park, Taesub Jung, Wonje Park, Taeheon Lee, Eunkyung Park, Sangjun Choi, Gyehun Choi, Haeyong Park, Yujung Choi, Seungwook Lee, Yunkyung Kim, Jung, Y. Jay, Donghyuk Park, Seungjoo Nah, Youngsun Oh, Mihye Kim, Yooseung Lee, Youngwoo Chung, Hisanori, Ihara, Joonhyuk Im, Lee, Daniel K. J., Byunghyun Yim, GiDoo Lee, Heesang Kown, Sungho Choi, Jeonsook Lee, Dongyoung Jang, Youngchan Kim, Tae Chan Kim, Hiroshige, Goto, Chi-Young Choi, Duckhyung Lee, GabSoo Han

“…According to the trend towards high-resolution CMOS image sensors, pixel sizes are continuously shrinking, towards and below 1.0μm, and sizes are now reaching…”
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The observation of plasma induced defect density at a-Si:H interface by quasi-static C-V measurement by Ihara, Hisanori

“…ASi i-p diode with i/i interface in i-a-Si layer is prepared. The upper i-a-Si layer is deposited by the plasma enhanced chemical vapor deposition method…”
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3.7x3.7 mu m super(2) square pixel CMOS image sensor for digital still camera application by Ihara, Hisanori, Yamashita, Hirofumi, Inoue, Ikuko, Yamaguchi, Tetsuya, Nakamura, Nobuo, Nozaki, Hidetoshi

“…A CMOS image sensor with reduced cell size for digital still camera use is described. The sensor is fabricated using a 0.6 mu m, triple-polysilicon, double…”
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Electric field concentration at electrode edge with decreasing amorphous silicon defect density by Ihara, Hisanori, Oba, Eiji, Iida, Yoshinori, Nozaki, Hidetoshi, Wada, Tetsunori, Furukawa, Akihiko, Manabe, Sohei, Tango, Hiroyuki, Yoshida, Okio

“…Many studies have concentrated on the decrease in a-Si defect density. However, several a-Si image sensors, such as the 2M-pixel charge coupled device (CCD)…”
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Improvement of Hydrogenated Amorphous Silicon n-i-p Diode Performance by H 2 Plasma Treatment for i/p Interface by Ihara, Hisanori, Nozaki, Hidetoshi

“…Hydrogenated amorphous silicon (a-Si:H) n-i-p diodes in which the intrinsic (i-type) layer surfaces were exposed to an H 2 plasma before depositing the p-type…”
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A 2/3-in 400k-pixel sticking-free stack-CCD image sensor by Sasaki, M., Ihara, H., Matsunaga, Y.

“…A 2/3-in 400k-pixel stack-CCD image sensor overlaid with an amorphous silicon photoconversion layer has been developed with FIT architecture. The image…”
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Properties of Hydro-Fluorinated Amorphous Silicon-Carbide Produced by Intermediate Species SiF 2 by Uesugi, Takashi, Ihara, Hisanori, Matsumura, Hideki

“…A new type of hydro-fluorinated amorphous silicon-carbide (a-SiC:F:H) film was produced by the glow-discharge decomposition of intermediate-species SiF 2 , H 2…”
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The Staebler-Wronski Effect in Hydro-Fluorinated Amorphous Silicon Prepared Using the Intermediate Species SiF 2 by Uesugi, Takashi, Ihara, Hisanori, Matsumura, Hideki

“…The change in conductivity produced by irradiation with light, the so-called Staebler-Wronski effect (S-W effect), was studied experimentally in a new type of…”
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Photoconductive Amorphous Silicon-Carbide Produced by Intermediate Species SiF 2 and CF 4 Mixture by Matsumura, Hideki, Uesugi, Takashi, Ihara, Hisanori

“…A new type of amorphous silicon-carbide film is produced by the glow discharge decomposition of an intermediate species SiF 2 , CF 4 and H 2 gas mixture…”
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A 2/3-in 2 million pixel STACK-CCD HDTV imager by Yamashita, H., Sasaki, N., Ohsawa, S., Miyagawa, R., Ohba, E., Mabuchi, K., Nakamura, N., Tanaka, N., Endoh, N., Inoue, I., Matsunaga, Y., Egawa, Y., Endo, Y., Yamaguchi, T., Iida, Y., Furukawa, A., Manabe, S., Ishizuka, Y., Ichinose, H., Niiyama, T., Ihara, H., Nozaki, H., Yanase, I., Sakuma, N., Sakakubo, T., Honda, H., Masuoka, F., Yoshida, O., Tango, H., Sano, S.

“…A 2/3-in optical format 2 M pixel STACK-CCD imager has been developed. The STACK-CCD imager, overlaid with an amorphous silicon photoconversion layer, realizes…”
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Photoconductive amorphous silicon-carbide produced by intermediate species SiF2 and CF4 mixture by MATSUMURA, H, UESUGI, T, IHARA, H

“…A new type of amorphous silicon-carbide film is produced by the glow discharge decomposition of an intermediate species SiF2, CF4 and H2 gas mixture. Optical…”
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