Search Results - "Hirashita, N."

Retention and thermal desorption of helium in pure tungsten by Xu, Q., Zhang, J., Maejima, K., Hirashita, N.

“…Tungsten (W) is cited as a candidate first-wall material in fusion reactors owing to its outstanding thermal properties and erosion resistance. An important…”
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Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance by Takagi, S., Iisawa, T., Tezuka, T., Numata, T., Nakaharai, S., Hirashita, N., Moriyama, Y., Usuda, K., Toyoda, E., Dissanayake, S., Shichijo, M., Nakane, R., Sugahara, S., Takenaka, M., Sugiyama, N.

“…An effective way to reduce supply voltage and resulting power consumption without losing the circuit performance of CMOS is to use CMOS structures using high…”
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Chemistry and band offsets of HfO2 thin films for gate insulators by Oshima, M., Toyoda, S., Okumura, T., Okabayashi, J., Kumigashira, H., Ono, K., Niwa, M., Usuda, K., Hirashita, N.

“…Interfacial chemistry and band offsets of HfO2 films grown on Si(100) substrates are investigated using high-resolution angle-resolved photoelectron…”
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High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique by Irisawa, T., Numata, T., Tezuka, T., Usuda, K., Hirashita, N., Sugiyama, N., Toyoda, E., Takagi, S.-I.

“…Novel uniaxially strained SiGe-on-insulator (SGOI) pMOSFETs with Ge content of 20% have been successfully fabricated by utilizing lateral (uniaxial)…”
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Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique by Irisawa, T., Numata, T., Hirashita, N., Moriyama, Y., Nakaharai, S., Tezuka, T., Sugiyama, N., Takagi, S.

“…We propose a novel method to form Ge nano-wire structures by utilizing a three-dimensional (3D) Ge condensation technique. Since this method needs only…”
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Physical Understanding of Strain-Induced Modulation of Gate Oxide Reliability in MOSFETs by Irisawa, T., Numata, T., Toyoda, E., Hirashita, N., Tezuka, T., Sugiyama, N., Takagi, S.-i.

“…We have systematically investigated the effects of strain on the gate oxide reliability, using biaxially strained Si MOSFETs, to elucidate their physical…”
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Chemistry and band offsets of HfO2 thin films on Si revealed by photoelectron spectroscopy and x-ray absorption spectroscopy by Toyoda, S, Okabayashi, J, Kumigashira, H, Oshima, M, Ono, K, Niwa, M, Usuda, K, Hirashita, N

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Performance enhancement of partially and fully depleted strained-SOI MOSFETs by Numata, T., Irisawa, T., Tezuka, T., Koga, J., Hirashita, N., Usuda, K., Toyoda, E., Miyamura, Y., Tanabe, A., Sugiyama, N., Takagi, S.

“…The authors have developed short-channel strained-silicon-on-insulator (strained-SOI) MOSFETs on silicon-germanium (SiGe)-on-insulator (SGOI) substrates…”
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Fully-depleted SOI CMOSFETs with the fully-silicided source/drain structure by Ichimori, T., Hirashita, N.

“…A fully-depleted (FD) silicon-on-insulator (SOI) CMOSFET, whose source/drain (S/D) layers are completely silicided in depth with cobalt, have been successfully…”
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Effect of nitrogen doping into SiO2 studied by photoemission spectroscopy by Toyoda, S., Okabayashi, J., Kumigashira, H., Oshima, M., Ono, K., Niwa, M., Usuda, K., Hirashita, N.

“…Photoemission spectroscopy using synchrotron radiation has been performed on ultrathin Si oxynitride films on Si(001) to investigate a change of the…”
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Fully depleted SOI process and device technology for digital and RF applications by Ichikawa, F., Nagatomo, Y., Katakura, Y., Itoh, M., Itoh, S., Matsuhashi, H., Ichimori, T., Hirashita, N., Baba, S.

“…This work demonstrates suitability of FD-SOI devices for low power digital and RF applications for wireless communication. FD-SOI CMOS offers an approximately…”
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Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors by Fujioka, H., Sekiya, T., Kuzuoka, Y., Oshima, M., Usuda, H., Hirashita, N., Niwa, M.

“…To simultaneously obtain information on both the electrical properties and the origin of defects, we have developed synchrotron-radiation deep level transient…”
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Interfacial chemistry and structures of ultrathin Si oxynitride films by Oshima, M., Kimura, K., Ono, K., Horiba, K., Nakamura, K., Kumigashira, H., Oh, J.-H., Niwa, M., Usuda, K., Hirashita, N.

“…Ultrathin SiON films with different nitrogen profiles grown by the plasma-enhanced CVD method and the rapid thermal nitridation (RTN) of SiO 2 with an NO gas…”
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Hole-Mobility Enhancement in Ge-Rich Strained SiGe-on-Insulator pMOSFETs at High Temperatures by Tezuka, T., Nakaharai, S., Moriyama, Y., Hirashita, N., Sugiyama, N., Tanabe, A., Usuda, K., Takagi, S.

“…Temperature dependence of hole mobility in Ge-rich strained SiGe-on-insulator (SGOI) pMOSFETs was investigated up to 473 K in order to examine the advantage in…”
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Effects of surface hydrogen on the air oxidation at room temperature of HF-treated Si(100) surfaces by HIRASHITA, N, KINOSHITA, M, AIKAWA, I, AJIOKA, T

“…Thermally stimulated desorption and x-ray photoelectron spectroscopy were used to study the air oxidation at room temperature of HF-treated Si(100) surfaces…”
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Analysis of growth rate during Si epitaxy by hydrogen coverage model by Sugiyama, N., Hirashita, N., Mizuno, T., Moriyama, Y., Takagi, S.

“…Growth rate of Si epitaxy on (1 0 0) and (1 1 0) Si surfaces was analyzed by a hydrogen coverage model assuming that the source disilane molecules adsorb and…”
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A new strained-SOI/GOI dual CMOS technology based on local condensation technique by Tezuka, T., Nakaharai, S., Moriyama, Y., Hirashita, N., Toyoda, E., Sugiyama, N., Mizuno, T., Takagi, S.

“…Strained Si-on-insulator NMOSFETs and strained SiGe-on-insulator PMOSFETs were integrated, for the first time, using the local condensation technique. Both P-…”
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Initial oxidation features of Si(100) studied by Si2p core-level photoemission spectroscopy by Oh, J.H., Nakamura, K., Ono, K., Oshima, M., Hirashita, N., Niwa, M., Toriumi, A., Kakizaki, A.

“…The oxygen adsorption processes during the initial oxidation of Si(100) have been investigated by high-resolution photoemission spectroscopy of the Si2p core…”
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High current drive uniaxially-strained SGOI pMOSFETs fabricated by lateral strain relaxation technique by Irisawa, T., Nuipata, T., Tezuka, T., Usuda, K., Hirashita, N., Sugiyama, N., Toyoda, E., Takagi, S.-I.

“…Novel uniaxially-strained SiGe-on-insulator (SGOI) pMOSFETs are successfully fabricated by utilizing lateral strain relaxation process and the mobility…”
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Study on temperature calibration of a silicon substrate in a temperature programmed desorption analysis by Hirashita, N., Jimbo, T., Matsunaga, T., Matsuura, M., Morita, M., Nishiyama, I., Nishizuka, M., Okumura, H., Shimazaki, A., Yabumoto, N.

“…In this work we propose a standard practice covering temperature calibration of a Si substrate, ranging from 400 to 1000 °C, for temperature programmed…”
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