Search Results - "Hino, Tomonori"
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Disaster report on geotechnical damage in Miyagi Prefecture, Japan caused by Typhoon Hagibis in 2019
Published in Soils and foundations (01-04-2021)“…Heavy rains brought about by Typhoon Hagibis (Typhoon No. 19) in October 2019 caused great damage to the Kanto and Tohoku regions of Japan. In the Tohoku…”
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Evaporation characteristics of ETBE-blended gasoline
Published in Journal of hazardous materials (28-04-2015)“…•We chose 8-component hydrocarbon mixture as a model gasoline, and defined the molar mass of gasoline.•We proposed an evaporation model assuming a 2-component…”
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GaN-Based High Power Blue-Violet Laser Diodes
Published in Japanese Journal of Applied Physics (2001)“…The epitaxial lateral overgrowth (ELO) technique is an important technology for improving the characteristics of GaN-based laser diodes (LDs). The…”
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Structural analysis of ELO-GaN grown on a sapphire substrate as the underlying layer of a GaN-based laser diode
Published in Physica status solidi. A, Applications and materials science (01-01-2007)“…Using micro‐beam X‐ray diffraction (XRD), small c‐axis tilting was observed in maskless epitaxially laterally overgrown GaN (ELO‐GaN), which is a suitable…”
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Journal Article Conference Proceeding -
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High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise
Published in Japanese Journal of Applied Physics (2002)“…High-power AlGaInN laser diodes with both high kink level and low relative intensity noise (RIN) are fabricated. A kink level of higher than 100 mW is obtained…”
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Evaporation and diffusion behavior of fuel mixtures of gasoline and kerosene
Published in Fire safety journal (01-04-2012)“…Kerosene is widely used in lamps and stoves and is less of a fire hazard than other fuels, such as mineral spirits, due to its flash point being above 40°C and…”
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Dislocation related issues in the degradation of GaN-based laser diodes
Published in IEEE journal of selected topics in quantum electronics (01-11-2004)“…We investigate degraded GaN-based laser diodes (LDs) on epitaxial lateral overgrown GaN layers in terms of dislocations. Almost all of the threading…”
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100-mW kink-free blue-violet laser diodes with low aspect ratio
Published in IEEE journal of quantum electronics (01-01-2003)“…400-nm-band GaN-based laser diodes (LDs) operating with a kink-free output power of over 100 mW and having a low aspect ratio of 2.3 have been successfully…”
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AlGaInN high-power lasers grown on an ELO-GaN layer
Published in Journal of crystal growth (01-12-2000)“…Epitaxially laterally overgrown (ELO)-GaN substrates with dislocation-free regions can be prepared with a relatively small thickness using atmospheric pressure…”
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Room-temperature continuous-wave operation of GaN-based laser diodes grown by raised-pressure metalorganic chemical vapor deposition
Published in Journal of electronic materials (1999)“…Both defect density as measured by etch-pit density and optical pumping threshold-power density decrease as the growth pressure is increased beyond 1 atm…”
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GaN-based high-power laser diodes
Published in Materials science & engineering. B, Solid-state materials for advanced technology (22-05-2001)“…We report our recent progress on GaN-based laser diodes (LDs) which will be applied as a light source in high-density optical storage systems. Recently we…”
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Properties of GaN-based laser diodes with a buried-ridge structure
Published in Journal of crystal growth (01-12-2000)“…The buried-ridge structure was introduced to GaN-based laser diodes for the purpose of realizing an index-guided structure in order to control the difference…”
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Journal Article Conference Proceeding