Search Results - "Himwas, C."

Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires by Saket, O., Himwas, C., Cattoni, A., Oehler, F., Bayle, F., Collin, S., Travers, L., Babichev, A., Julien, F. H., Harmand, J. C., Tchernycheva, M.

“…The electrical properties of passivated and non-passivated axial p–i–n junctions in GaAsP nanowires are investigated using electron-beam induced current…”
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Effect of the quantum well thickness on the performance of InGaN photovoltaic cells by Redaelli, L., Mukhtarova, A., Valdueza-Felip, S., Ajay, A., Bougerol, C., Himwas, C., Faure-Vincent, J., Durand, C., Eymery, J., Monroy, E.

“…We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar…”
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Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots by Himwas, C, Songmuang, R, Bleuse, J, Rapenne, L, Sarigiannidou, E, Monroy, E

“…We report on the structural and optical properties of AlGaN/AlN quantum dot (QD) superlattices synthesized by plasma-assisted molecular-beam epitaxy. Modifying…”
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Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires by Saket, O., Himwas, C., Cattoni, A., Oehler, F., Bayle, F., Collin, S., Travers, L., Babichev, A., Julien, F., Harmand, J., Tchernycheva, M.

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Degradation mechanisms of annealed GaAsPBi films grown by molecular beam epitaxy by Himwas, C., Wongpinij, T., Kijamnajsuk, S., Euaruksakul, C., Photongkam, P., Tchernycheva, M., Pumee, W., Panyakeow, S., Kanjanachuchai, S.

“…•GaAsPBi films grown by MBE are annealed to improve their optical properties.•Optimum temperature for ex situ annealing differs from in situ…”
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Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission by Himwas, C., den Hertog, M., Dang, Le Si, Monroy, E., Songmuang, R.

“…We present structural and optical studies of AlGaN sections and AlGaN/AlN nanodisks (NDs) in nanowires grown by plasma-assisted molecular beam epitaxy. The…”
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Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots by Himwas, C., Songmuan, R., S. Dang, L., Bleuse, J., Rapenne, L., Sarigiannidou, E., Monroy, E.

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Effect of the quantum well thickness on the performance of InGaN photovoltaic cells by Redaelli, L, Mukhtarova, A, Valdueza-Felip, S, Ajay, A, Bougerol, C, Himwas, C, Faure-Vincent, J, Durand, C, Eymery, J, Monroy, E

“…Appl. Phys. Lett. 105, 131105 (2014) We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of…”
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Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240-350 nm emission by Himwas, C, Hertog, M. den, Dang, Le Si, Monroy, E, Songmuang, R

“…The Al-Ga intermixing at Al(Ga)N/GaN interfaces in nanowires and the chemical inhomogeneity in AlxGa1-xN/AlN nanodisks (NDs) are attributed to the strain…”
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Luminescence properties of as-grown and annealed InGaAs quantum dots on cross-hatch patterns by Himwas, C., Thainoi, S., Panyakeow, S., Kanjanachuchai, S.

“…InGaAs quantum dots (QDs) grown on cross-hatch (CH) pattern of InGaAs/GaAs exhibit two fundamental luminescence peaks associated with the QD and the CH layers…”
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