Nano-CNC Machining of Sub-THz Vacuum Electron Devices

Nano-CNC Machining of Sub-THz Vacuum Electron Devices

Nano-computer numerical control (CNC) machining technology is employed for the fabrication of sub-THz (100-1000 GHz) vacuum electron devices. Submicron feature tolerances and placement accuracy have been achieved and surface roughness of a few tens of nanometers has been demonstrated providing high-...

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Bibliographic Details
Published in:IEEE transactions on electron devices Vol. 63; no. 10; pp. 4067 - 4073
Main Authors: Gamzina, Diana, Himes, Logan G., Barchfeld, Robert, Yuan Zheng, Popovic, Branko K., Paoloni, Claudio, EunMi Choi, Luhmann, Neville C.
Format: Journal Article
Language:English
Published: New York IEEE 01-10-2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Computer numerical control
Couplers
Diamond
Engineering
High frequency
Machining
micromachining
nano-computer numerical control (CNC)
Nanoscale devices
Numerical controls
Physics
Radio frequency
Rough surfaces
Surface roughness
terahertz
vacuum electron device (VED)
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Summary:Nano-computer numerical control (CNC) machining technology is employed for the fabrication of sub-THz (100-1000 GHz) vacuum electron devices. Submicron feature tolerances and placement accuracy have been achieved and surface roughness of a few tens of nanometers has been demonstrated providing high-quality radio frequency (RF) transmission and reflection parameters on the tested circuit structures. Details of the manufacturing approach are reported for the following devices: W-band sheet beam (SB) klystron, two designs of a 220-GHz SB double-staggered grating traveling wave tube (TWT), 263-GHz SB TWT amplifier for an electron paramagnetic resonance spectrometer, 346-GHz SB backward wave oscillator for fusion plasma diagnostics, 346-GHz pencil beam backward wave oscillator, and 270-GHz pencil beam folded waveguide TWT self-driving amplifier. Application of the nano-CNC machining to nanocomposite scandate tungsten cathodes as well as to passive RF components is also discussed.
Bibliography:USDOE Office of Science (SC)
FG02-99ER54518
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2016.2594027