Search Results - "Hierro, Adrián"
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Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states
Published in Solar energy materials and solar cells (15-09-2019)“…In this work we investigate the effect of rapid thermal annealing (RTA) on the performance of solar cells consisting of different GaAsSbN-based structures and…”
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2
Room temperature absorption in laterally biased quantum infrared detectors fabricated by MBE regrowth
Published in Journal of crystal growth (15-05-2011)“…In this paper, we show room temperature operation of a quantum well infrared photodetector (QWIP) using lateral conduction through ohmic contacts deposited at…”
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Journal Article Conference Proceeding -
3
Superoxide radical derived metal-free spiro-OMeTAD for highly stable perovskite solar cells
Published in Nature communications (10-09-2024)“…Lithium salt-doped spiro-OMeTAD is widely used as a hole-transport layer (HTL) for high-efficiency n-i-p perovskite solar cells (PSCs), but unfortunately…”
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4
Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate
Published in Applied surface science (30-06-2018)“…InAs/GaAs nanostructure tunability through the capping rate: from quantum rings to completely preserved pyramidal quantum dots. [Display omitted] •Control over…”
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5
Terahertz Intersubband Electroluminescence from Nonpolar m‑Plane ZnO Quantum Cascade Structures
Published in ACS photonics (20-01-2021)“…The ZnO-based heterostructures are predicted to be promising candidates for optoelectronic devices in the infrared and terahertz (THz) spectral domains owing…”
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6
Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors
Published in Applied physics letters (06-07-2015)“…InAs/GaAs1−xSbx Quantum Dot (QD) infrared photodetectors are analyzed by photocurrent spectroscopy. We observe that the integrated responsivity of the devices…”
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7
MOCVD growth of CdO very thin films: Problems and ways of solution
Published in Applied surface science (01-11-2016)“…•Very thin flat films of CdO (001) on r-sapphire have been obtained.•The lowest thickness is 5 times lower than other previously reported.•The effect of the…”
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8
Self-assembled metal-oxide nanoparticles on GaAs: infrared absorption enabled by localized surface plasmons
Published in Nanophotonics (Berlin, Germany) (01-07-2021)“…Metal-oxides hold promise as superior plasmonic materials in the mid-infrared compared to metals, although their integration over established material…”
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Interfacial Embedding of Laser‐Manufactured Fluorinated Gold Clusters Enabling Stable Perovskite Solar Cells with Efficiency Over 24
Published in Advanced materials (Weinheim) (01-09-2021)“…Tackling the interfacial loss in emerged perovskite‐based solar cells (PSCs) to address synchronously the carrier dynamics and the environmental stability, has…”
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Journal Article -
10
Optical Phase Transition in Semiconductor Quantum Metamaterials
Published in Physical review letters (10-09-2019)“…Unexpected light propagation effects, such as negative refraction, have been reported in artificial media. Leveraging on the intersubband resonances in…”
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11
Mid-IR Surface Plasmon Polaritons in CdZnO thin films on GaAs
Published in Applied surface science (15-01-2023)“…[Display omitted] •In this work, the first integration of a continuous polycrystalline CdZnO thin layer on GaAs, one of the dominant mid-IR optoelectronic…”
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12
Interfacial Embedding of Laser‐Manufactured Fluorinated Gold Clusters Enabling Stable Perovskite Solar Cells with Efficiency Over 24% (Adv. Mater. 36/2021)
Published in Advanced materials (Weinheim) (01-09-2021)“…Perovskite Solar Cells In article number 2101590, Hongqiang Wang and co‐workers report stable perovskite solar cells with champion efficiency over 24% and…”
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13
Optical Phase Transition in Semiconductor Quantum Metamaterials
Published in Physical review letters (01-09-2019)Get full text
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14
Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells
Published in Solar energy materials and solar cells (15-06-2020)“…We demonstrate type-II GaAsSb/GaAsN superlattices (SL) as a suitable structure to form the lattice-matched 1.0–1.15 eV subcell that would allow the…”
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Journal Article -
15
Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells
Published in Applied physics letters (17-12-2018)“…This paper reports on the demonstration of quantum cascade detectors (QCDs) based on ZnO/ZnMgO quantum wells (QWs) grown by molecular beam epitaxy on an…”
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16
Type-II Super Lattices for Photovoltaics: Analysis of Carrier Collection Efficiency by an Optoelectronic Study as a Function of Temperature
Published in Conference record of the IEEE Photovoltaic Specialists Conference (09-06-2024)“…Type-II GaAsSb/GaAsN structures as 1eV bandgap materials for photovoltaics suffer from low carrier collection efficiency. To evaluate recombination and…”
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Conference Proceeding -
17
Wurtzite Zn1−y(MgxCd1−x)yO quaternary systems for photodiodes in visible spectral range
Published in Journal of crystal growth (01-09-2016)“…We investigated the optical bandgap engineering of ZnO based quaternary alloy films of wurtzite Zn1−y(MgxCd1−x)yO for photodiodes in visible spectral range…”
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Journal Article -
18
Green Electroluminescence From ZnCdO Multiple Quantum-Well Light-Emitting Diodes Grown by Remote-Plasma-Enhanced Metal-Organic Chemical Vapor Deposition
Published in IEEE photonics technology letters (01-08-2011)“…Zn 0.80 Cd 0.20 O/Zn 0.92 Cd 0.08 O multiple quantum-well (MQW) light-emitting diodes (LEDs) on p -type 4H-SiC substrates, using remote-plasma-enhanced…”
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Wurtzite Zn1(Mg Cd1−) O quaternary systems for photodiodes in visible spectral range
Published in Journal of crystal growth (01-09-2016)Get full text
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20
Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer
Published in Nanoscale research letters (17-01-2014)“…An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out…”
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