Search Results - "Hiemstra, D.M."

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  1. 1

    LET spectra of proton energy levels from 50 to 500 MeV and their effectiveness for single event effects characterization of microelectronics by Hiemstra, D.M., Blackmore, E.W.

    Published in IEEE transactions on nuclear science (01-12-2003)
    “…The effective linear energy transfer of heavy nuclear recoils (Z/spl ges/3) produced by proton interactions in silicon are calculated for incident proton…”
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    Journal Article
  2. 2

    Guide to the 2008 IEEE Radiation Effects Data Workshop Record by Hiemstra, D.M.

    Published in 2009 IEEE Radiation Effects Data Workshop (01-07-2009)
    “…The 2008 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect…”
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    Conference Proceeding
  3. 3

    Guide to the 2007 IEEE Radiation Effects Data Workshop Record by Hiemstra, D.M.

    Published in 2008 IEEE Radiation Effects Data Workshop (01-07-2008)
    “…The 2007 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect. In this…”
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    Conference Proceeding
  4. 4

    Single Event Upset Characterization of the TMS320C6713 Digital Signal Processor Using Proton Irradiation by Hiemstra, D.M.

    Published in 2009 IEEE Radiation Effects Data Workshop (01-07-2009)
    “…The proton induced SEU cross-section of the TMS320C6713 digital signal processor's functional blocks are presented. The cross-sections are used to estimate the…”
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    Conference Proceeding
  5. 5

    Guide to the 2006 IEEE Radiation Effects Data Workshop Record by Hiemstra, D.M.

    Published in 2007 IEEE Radiation Effects Data Workshop (01-07-2007)
    “…The 2006 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect…”
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    Conference Proceeding
  6. 6

    Guide to the IEEE Radiation Effects Data Workshop by Hiemstra, D.M.

    Published in 2006 IEEE Radiation Effects Data Workshop (01-07-2006)
    “…This paper presents workshop records from 1992-2005 have been reviewed and tables prepared which facilitate the search for radiation response data by part…”
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    Conference Proceeding
  7. 7

    Single event upset characterization of the Pentium{reg{underscore}sign} MMX and Pentium {reg{underscore}sign} II microprocessors using proton irradiation by Hiemstra, D.M., Baril, A.

    Published in IEEE transactions on nuclear science (01-12-1999)
    “…Experimental single event upset characterization of the Pentium{reg{underscore}sign} MMX and Pentium{reg{underscore}sign}II microprocessors using proton…”
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    Journal Article
  8. 8

    Single Event Upset Characterization of the Virtex-4 Field Programmable Gate Array Using Proton Irradiation by Hiemstra, D.M., Chayab, F., Mohammed, Z.

    Published in 2006 IEEE Radiation Effects Data Workshop (01-07-2006)
    “…Proton induced SEU cross-sections of functional blocks and the SRAM which stores the logic configuration of the Virtex-4 FPGA are presented. Upset rates in the…”
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    Conference Proceeding
  9. 9

    Dynamic Single Event Upset Characterization of the MT48LC4M32B2TG-6 SDRAM Using Proton Irradiation by Hiemstra, D.M., Pranajaya, F.

    Published in 2007 IEEE Radiation Effects Data Workshop (01-07-2007)
    “…Dynamic single event upset characterization of the MT48LC4M32B2TG-6 SDRAM using proton irradiation is presented. The device's upset rate in the space radiation…”
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    Conference Proceeding
  10. 10

    Single event upset characterization of the Pentium(R) MMX and Pentium(R) II microprocessors using proton irradiation by Hiemstra, D.M., Baril, A.

    Published in IEEE transactions on nuclear science (01-12-1999)
    “…Experimental single event upset characterization of the Pentium(R) MMX and Pentium(R) II microprocessors using proton irradiation are presented. Results show…”
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    Journal Article
  11. 11

    Part II. Dynamic single event upset characterization of the Virtex-II field programmable gate array using proton irradiation by Hiemstra, D.M., Chayab, F.

    “…The proton induced dynamic SEU cross-section of additional functional blocks and reference designs on the Virtex-II FPGA are presented. The measured reference…”
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    Conference Proceeding
  12. 12

    Dose rate dependence of the current noise performance of an ultra-low noise precision bipolar operational amplifier by Hiemstra, D.M.

    Published in IEEE transactions on nuclear science (01-12-1999)
    “…The dose rate dependence of the current noise of a bipolar operational amplifier is presented. Total current noise performance degrades linearly with…”
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    Journal Article
  13. 13

    Dose rate and total dose dependence of the 1/f noise performance of a GaAs operational amplifier during irradiation by Hiemstra, D.M.

    Published in IEEE transactions on nuclear science (01-12-1995)
    “…Dose rate and total dose dependence of the 1/f noise performance of a custom GaAs MESFET operational amplifier during irradiation are presented. Dose rate…”
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    Journal Article
  14. 14

    Single event upset characterization of the SMJ320C6701 digital signal processor using proton irradiation by Hiemstra, D.M., Miladinovic, B., Chayab, F.

    “…The proton induced SEU cross-section of the functional blocks of the SMJ320C6701 digital signal processor (DSP) are presented. The cross-sections are used to…”
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    Conference Proceeding
  15. 15

    Dynamic single event upset characterization of the Virtex-IIPro's embedded IBM PowerPC405 using proton irradiation by Chayab, F., Hiemstra, D.M., Ronge, R.

    “…The proton induced dynamic SEU cross-section of the IBM PowerPC405 embedded in Xilinx's Virtex-IIPro FPGAs is reported. This upset cross-section is then used…”
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    Conference Proceeding
  16. 16

    Dose rate and total dose 1/f noise performance of GaAs heterojunction bipolar transistors by Hiemstra, D.M.

    Published in IEEE transactions on nuclear science (01-12-1996)
    “…GaAs heterojunction bipolar transistor 1/f noise performance is demonstrated to be unaffected by dose rate and total dose. This is believed to be due to…”
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    Journal Article
  17. 17

    Single event upset characterization of the ESP603 single board space computer with the PowerPC603r processor using proton irradiation by Rufenacht, H., Hiemstra, D.M., Ronge, R., Klincsek, T., Le, K.A., Gazdewich, J.

    “…The proton induced SEU cross-sections measured in a dynamic test of the ESP603 Power PC 603r processor are presented. The cross-sections are used to estimate…”
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    Conference Proceeding
  18. 18

    Dose rate and total dose dependence of low frequency noise performance, I-V curves and sidegating for GaAs MESFETs by Hiemstra, D.M., Kizeevi, A.A., Hou, L.Z., Salama, C.A.T.

    Published in IEEE transactions on nuclear science (01-12-1998)
    “…Total dose and dose rate performance of GaAs MESFET devices of various geometries and sidegating structures at various distances and orientations are…”
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    Journal Article
  19. 19

    Single event upset characterization of the Pentium/sup /spl reg// 4, Pentium/sup /spl reg// III and low power Pentium/sup /spl reg// MMX microprocessors using proton irradiation by Hiemstra, D.M., Yu, S., Pop, M.

    “…Experimental single event upset characterization of the Pentium/sup /spl reg// 4, Pentium/sup /spl reg// III and Low Power Pentium/sup /spl reg// MMX…”
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    Conference Proceeding
  20. 20

    A review of the single event effects performance of x86 microprocessors by Hiemstra, D.M., Bailak, G.

    “…The paper presents a review of the experimental single event upset performance of the Pentium/spl reg/4, Pentium/spl reg/ III, Pentium/spl reg/ II, Celeron/spl…”
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