Search Results - "Hideto Yanagisawa, Hideto Yanagisawa"

Preparation of Oxygen-Containing Pt and Pt Oxide Thin Films by Reactive Sputtering and Their Characterization by Yoshio Abe, Yoshio Abe, Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki

“…Oxygen-containing Pt and Pt oxide thin films were prepared by reactive sputtering in Ar and O 2 gas atmosphere and effects of oxygen flow ratio on…”
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Single-Oriented Growth of (111) Cu Film on Thin ZrN/Zr Bilayered Film for ULSI Metallization by Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki, Hidekazu Miyake, Hidekazu Miyake, Yoshio Abe, Yoshio Abe

“…We investigated the influence of ZrN/Zr bilayered film thickness on the (111) Cu orientation and the thermal stability of the Cu/ZrN/Zr/Si contact system by…”
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Dielectric Properties of Zr--Al Anodized Thin Film Capacitors Prepared Using Al-Doped Zr Alloy Films by Kimizaki, Hidefumi, Shinkai, Satoko, Sasaki, Katsutaka, Yanagisawa, Hideto, Yamane, Misao, Abe, Yoshio

“…We have examined the dielectric properties of Zr--Al anodized thin film capacitors prepared using Al-doped Zr alloy films to improve the thermal stability and…”
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Crystal Orientation of Epitaxial α-Ta(110) Thin Films Grown on Si(100) and Si(111) Substrates by Sputtering by Kudo, Masahiro, Shinkai, Satoko, Yanagisawa, Hideto, Sasaki, Katsutaka, Abe, Yoshio

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Epitaxial Growth of (0001)Ru Thin Films on (111)ZrN/(111)Si by Low-Temperature Process and Their Surface Morphologies by Sakurai, Junpei, Sasaki, Katsutaka, Yanagisawa, Hideto, Shinkai, Satoko, Abe, Yoshio

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Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process by Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki, Yoshio Abe, Yoshio Abe, Midori Kawamura, Midori Kawamura, Satoko Shinkai, Satoko Shinkai

“…We have investigated the preparation conditions of stoichiometric ZrN films with low resistivity and high crystallinity at relatively low temperatures using an…”
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Study on Preparation Conditions of Single-Oriented (002) Zr Thin Films on n-(001) Si by Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki, Hidekazu Miyake, Hidekazu Miyake, Yoshio Abe, Yoshio Abe

“…We have investigated the preparation conditions of single-oriented (002) Zr film on n-(001) Si by varying the sputtering parameters during deposition using an…”
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Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process by Yanagisawa, Hideto, Shinkai, Satoko, Sasaki, Katsutaka, Abe, Yoshio, Sakai, Akira, Zaima, Shigeaki

“…We have prepared (001)ZrN films epitaxially grown on (001)Si substrates by a low temperature process using an ultrahigh vacuum magnetron sputtering system, and…”
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Realization of Cu(111) Single-Oriented State on SiO 2 by Annealing Cu–Zr Film and the Thermal Stability of Cu–Zr/ZrN/Zr/Si Contact System by Katsutaka Sasaki, Katsutaka Sasaki, Hidekazu Miyake, Hidekazu Miyake, Satoko Shinkai, Satoko Shinkai, Yoshio Abe, Yoshio Abe, Hideto Yanagisawa, Hideto Yanagisawa

“…We investigated whether the Cu(111) single-oriented state having excellent electromigration resistance could be realized on SiO 2 /Si and Si wafers by…”
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A Study on the Preparation Conditions of Single Oriented (002) Hf Film on n-(001) Si by Satoko Shinkai, Satoko Shinkai, Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki, Yoshio Abe, Yoshio Abe

“…We have investigated the preparation conditions of a single oriented (002) Hf film on n-(001) Si, by varying the sputtering parameters during deposition. The…”
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Preparation of a Contact System with a Single-Oriented (111)Al Overlayer by Interposing a Thin ZrN/Zr Bilayered Barrier Applicable to Sub-0.25-µm Design Rule by Hidekazu Miyake, Hidekazu Miyake, Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki, Satoko Shinkai, Satoko Shinkai, Yoshio Abe, Yoshio Abe

“…Sequential single-oriented growth of a (111)Al/(111)ZrN/(002)Zr trilayered film could be realized on (001)Si, when a ZrN(200 Å)/Zr(200 Å) bilayered film was…”
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Formation Process and Electrical Property of RuO 2 Thin Films Prepared by Reactive Sputtering by Yukinao Kaga, Yukinao Kaga, Yoshio Abe, Yoshio Abe, Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki

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Preparation of Cu 10 Zr 7 Intermetallic Compound Film and Its Application as a Diffusion Barrier in Cu/Cu 10 Zr 7 /ZrN/Si Contact System by Ken-ichi Yoshimoto, Ken-ichi Yoshimoto, Hideto Yanagisawa, Hideto Yanagisawa, Katsutaka Sasaki, Katsutaka Sasaki

“…We investigated the diffusion barrier properties of Cu 10 Zr 7 intermetallic compound film for possible application to Cu metallization technology. First, a…”
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ELECTRICAL PROPERTIES OF HfO2 THIN INSULATING FILM PREPARED BY ANODIC OXIDATION by Yanagisawa, H, Kamijyo, M, Shinkai, S, Sasaki, K, Abe, Y, Yamane, M

“…Polycrystalline HfO2 thin film capacitors were prepared by anodizing sputter-deposited Hf films, and their capacitor and leakage current properties were…”
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Initial Silicide Formation Process of Single Oriented (002) Hf Film on Si and Its Diffusion Barrier Property by Satoko Shinkai, Satoko Shinkai, Katsutaka Sasaki, Katsutaka Sasaki, Yoshio Abe, Yoshio Abe, Hideto Yanagisawa, Hideto Yanagisawa

“…We have investigated the initial silicide formation process of the single oriented (002) Hf film on (001) Si and compared it with that of the polycrystalline…”
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Effects of Sputtering Parameters on the Formation of Single-Oriented (002) Ti Film on Si by Mireba, Kazuhiro, Shinkai, Satoko, Yanagisawa, Hideto, Sasaki, Katsutaka, Abe, Yoshio

“…We investigated the preparation conditions of a single-oriented (002) Ti film on a Si substrate, as functions of sputtering parameters, using an…”
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Realization of Sequential Epitaxial Growth of Cu/HfN Bilayered Films on (111) and (001) Si by Shinkai, Satoko, Sasaki, Katsutaka, Yanagisawa, Hideto, Abe, Yoshio

“…Cu films were deposited on epitaxial HfN/Si systems using a dc magnetron sputtering system without breaking the vacuum. Crystal orientation of Cu films was…”
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Preparation of Low-Resistivity α -Ta Thin Films on (001) Si by Conventional DC Magnetron Sputtering by Shiojiri, Masayuki, Shinkai, Satoko, Sasaki, Katsutaka, Yanagisawa, Hideto, Abe, Yoshio

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PREPARATION OF A CONTACT SYSTEM WITH A SINGLE-ORIENTED (111)Al OVERLAYER BY INTERPOSING A THIN ZrN/Zr BILAYERED BARRIER APPLICABLE TO SUB-0.25-mu m DESIGN RULE by Miyake, H, Yanagisawa, Y, Sasaki, K, Shinkai, S, Abe, Y

“…Sequential single-oriented growth of a (111)Al/(111)ZrN/(002)Zr trilayered film could be realized on (001)Si, when a ZrN(200 angstroms)/Zr(200 angstroms)…”
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Preparation of Cu10Zr7 intermetallic compound film and its application as a diffusion barrier in Cu/Cu10Zr7/ZrN/Si contact system by YOSHIMOTO, K.-I, YANAGISAWA, H, SASAKI, K

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