Search Results - "Heuken, M"

Chemical Vapor Deposition of Organic-Inorganic Bismuth-Based Perovskite Films for Solar Cell Application by Sanders, S., Stümmler, D., Pfeiffer, P., Ackermann, N., Simkus, G., Heuken, M., Baumann, P. K., Vescan, A., Kalisch, H.

“…Perovskite solar cells have shown a rapid increase of performance and overcome the threshold of 20% power conversion efficiency (PCE). The main issues…”
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Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers by Yacoub, H., Mauder, C., Leone, S., Eickelkamp, M., Fahle, D., Heuken, M., Kalisch, H., Vescan, A.

“…The effect of different carbon doping techniques on the dynamic behavior of GaN-on-Si buffer was investigated. Intentional doping using a hydrocarbon precursor…”
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Showerhead-assisted chemical vapor deposition of CsPbBr3 films for LED applications by Sanders, S., Simkus, G., Riedel, J., Ost, A., Schmitz, A., Muckel, F., Bacher, G., Heuken, M., Vescan, A., Kalisch, H.

“…CsPbBr 3 represents a highly attractive material for perovskite light-emitting diodes (PeLEDs) in the green spectral range. However, the lack of deposition…”
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Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs by Heuken, L., Kortemeyer, M., Ottaviani, A., Schroder, M., Alomari, M., Fahle, D., Marx, M., Heuken, M., Kalisch, H., Vescan, A., Burghartz, J. N.

“…In this article, an optimized carbon-doped AlGaN/AlN super-lattice (SL) buffer structure for GaN-based high electron mobility transistors, grown on 200-mm Si…”
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Energy bandgap bowing of InAlN alloys studied by spectroscopic ellipsometry by Iliopoulos, E., Adikimenakis, A., Giesen, C., Heuken, M., Georgakilas, A.

“…In x Al 1 − x N films were heteroepitaxially grown on Al N ∕ Al 2 O 3 (0001) templates by molecular beam epitaxy. The compositions studied spanned the whole…”
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Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures by Minj, A., Romero, M. F., Wang, Y., Tuna, Ö., Feneberg, M., Goldhahn, R., Schmerber, G., Ruterana, P., Giesen, C., Heuken, M.

“…The optical properties of fully coherently grown single InGaN/GaN heterostructures for 12 < I n % < 17 were investigated under low and high density…”
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Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2 by Marx, M., Grundmann, A., Lin, Y.-R., Andrzejewski, D., Kümmell, T., Bacher, G., Heuken, M., Kalisch, H., Vescan, A.

“…The influence of the main growth parameters on the growth mechanism and film formation processes during metalorganic vapor-phase epitaxy (MOVPE) of…”
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Investigation of large-area OLED devices with various grid geometries by Slawinski, M., Weingarten, M., Heuken, M., Vescan, A., Kalisch, H.

“…(Left) Excellent agreement of simulated and measured luminance distribution. (Right) Two efficient techniques for the enhancement of luminance distribution…”
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Effect of the AIN nucleation layer growth on AlN material quality by Reentilä, O., Brunner, F., Knauer, A., Mogilatenko, A., Neumann, W., Protzmann, H., Heuken, M., Kneissl, M., Weyers, M., Tränkle, G.

“…AlN layers were grown by metalorganic vapor-phase epitaxy at high temperatures up to 1500 °C. Nucleation layer growth parameters and flow conditions before…”
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Self-organized growth of catalyst-free GaN nano- and micro-rods on Si(111) substrates by MOCVD by Foltynski, B., Giesen, C., Heuken, M.

“…Our study shows the impact of the process parameters: predose before AlN buffer deposition, SiNx deposition time, GaN growth temperature and silane injection…”
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Optical, structural investigations and band-gap bowing parameter of GaInN alloys by Moret, M., Gil, B., Ruffenach, S., Briot, O., Giesen, Ch, Heuken, M., Rushworth, S., Leese, T., Succi, M.

“…We have performed a detailed investigation of the photoluminescence features taken at 2 K on a series of Ga x In 1− x N alloys grown by metal-organic…”
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Carrier dynamics in blue and green emitting InGaN MQWs by Aleksiejūnas, R., Nomeika, K., Miasojedovas, S., Nargelas, S., Malinauskas, T., Jarašiūnas, K., Tuna, Ö., Heuken, M.

“…Spectrally and spatially‐resolved nonlinear optical techniques were combined with the photoluminescence spectroscopy to study carrier dynamics and…”
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Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method by Kuzmik, J., Javorka, R., Alam, A., Marso, M., Heuken, M., Kordos, P.

“…Self-heating effects and temperature rise in AlGaN/GaN HEMTs grown on silicon and sapphire substrates are studied, exploiting transistor DC characterization…”
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Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers by Reuters, Benjamin, Wille, A., Ketteniss, N., Hahn, H., Holländer, B., Heuken, M., Kalisch, H., Vescan, A.

“…Group III nitride heterostructures with low polarization difference recently moved into the focus of research for realization of enhancement-mode (e-mode)…”
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Electrothermal characterization of large-area organic light-emitting diodes employing finite-element simulation by Slawinski, M., Bertram, D., Heuken, M., Kalisch, H., Vescan, A.

“…Excellent agreement of measured (a) and simulated (b) temperature distribution of an OLED. [Display omitted] ► Excellent agreement of simulation and…”
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Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy by Kehagias, Th, Dimitrakopulos, G. P., Kioseoglou, J., Kirmse, H., Giesen, C., Heuken, M., Georgakilas, A., Neumann, W., Karakostas, Th, Komninou, Ph

“…InAlN thin films grown on GaN/Al2O3 (0001) templates by metal-organic vapor phase epitaxy were studied by transmission electron microscopy techniques…”
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Anisotropic strain and phonon deformation potentials in GaN by Darakchieva, V., Paskova, T., Schubert, M., Arwin, H., Paskov, P. P., Monemar, B., Hommel, D., Heuken, M., Off, J., Scholz, F., Haskell, B. A., Fini, P. T., Speck, J. S., Nakamura, S.

“…We report optical phonon frequency studies in anisotropically strained c-plane- and a-plane-oriented GaN films by generalized infrared spectroscopic…”
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Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates by Reuters, B., Strate, J., Hahn, H., Finken, M., Wille, A., Heuken, M., Kalisch, H., Vescan, A.

“…The growing interest in modern energy-saving illuminants for general lighting, multimedia applications and automotive industry demands for alternative low-cost…”
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Growth Studies on Quaternary AlInGaN Layers for HEMT Application by Reuters, Benjamin, Wille, A., Holländer, B., Sakalauskas, E., Ketteniss, N., Mauder, C., Goldhahn, R., Heuken, M., Kalisch, H., Vescan, A.

“…Quaternary barrier layers for GaN-based high-electron-mobility transistors (HEMT) have recently been a focus of interest because of the possible…”
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Dielectric function and bowing parameters of InGaN alloys by Sakalauskas, E., Tuna, Ö., Kraus, A., Bremers, H., Rossow, U., Giesen, C., Heuken, M., Hangleiter, A., Gobsch, G., Goldhahn, R.

“…Ga‐rich (0001)‐oriented InxGa1−xN alloys grown by molecular beam epitaxy or metal‐organic vapour phase epitaxy on GaN/sapphire templates were investigated by…”
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