Search Results - "Hetherington, D. L."

A three-dimensional photonic crystal operating at infrared wavelengths by Lin, S. Y, Fleming, J. G, Hetherington, D. L, Smith, B. K, Biswas, R, Ho, K. M, Sigalas, M. M, Zubrzycki, W, Kurtz, S. R, Bur, Jim

“…The ability to confine and control light in three dimensions would have important implications for quantum optics and quantum-optical devices: the modification…”
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Observation of metal–oxide–semiconductor transistor operation using scanning capacitance microscopy by Nakakura, C. Y., Hetherington, D. L., Shaneyfelt, M. R., Shea, P. J., Erickson, A. N.

“…We report scanning capacitance microscopy (SCM) images of a working p-channel metal–oxide–semiconductor field-effect transistor (P-MOSFET) during device…”
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Rapid characterization and modeling of pattern-dependent variation in chemical-mechanical polishing by Stine, B.E., Ouma, D.O., Divecha, R.R., Boning, D.S., Chung, J.E., Hetherington, D.L., Harwoo, C.R., Nakagawa, O.S., Soo-Young Oh

“…Pattern-dependent effects are a key concern in chemical-mechanical polishing (CMP) processes. In oxide CMP, variation in the interlevel dielectric (ILD)…”
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An integrated GaAs n-p-n-p thyristor/JFET memory cell exhibiting nondestructive read by Hetherington, D.L., Klem, J.F., Weaver, H.T.

“…An integrated GaAs n-p-n-p thyristor-junction field effect transistor (JFET) structure displays memory by storing charge on the thyristor reverse-biased…”
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A GaAs memory device utilizing a buried JFET channel for nondestructive charge sensing by Hetherington, D.L., Klem, J.F., Weaver, H.T.

“…A new GaAs memory cell consists of a monolithic element in which a P-i-N-i-P epitaxial structure stores charge and a buried p-channel FET senses charge…”
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Radiation-induced defects in chemical-mechanical polished MOS oxides by Shaneyfelt, M.R., Warren, W.L., Hetherington, D.L., Winokur, P.S., Reber, R.A.

“…Defect centers in chemical-mechanical polished MOS oxides generated by either X-ray irradiation or high-field stress have been characterized using electron…”
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Investigation of plasma etch induced damage in compound semiconductor devices by Shul, R. J., Lovejoy, M. L., Hetherington, D. L., Rieger, D. J., Vawter, G. A., Klem, J. F., Melloch, M. R.

“…We have investigated the electrical performance of mesa‐isolated GaAs pn‐junction diodes to determine the plasma‐induced damage effects from reactive ion and…”
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Defect centers in chemical-mechanical polished MOS oxides by Shaneyfelt, M.R., Warren, W.L., Hetherington, D.L., Timon, R.P., Resnick, P.J., Winokur, P.S.

“…Defect centers generated in vacuum-ultraviolet irradiated chemical-mechanical polished oxides have been characterized using electron paramagnetic resonance and…”
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Plasma‐induced damage of GaAs pn‐junction diodes using electron cyclotron resonance generated Cl2/Ar, BCl3/Ar, Cl2/BCl3/Ar, and SiCl4/Ar plasmas by Shul, R. J., Lovejoy, M. L., Hetherington, D. L., Rieger, D. J., Klem, J. F., Melloch, M. R.

“…Plasma‐induced etch damage often degrades the electrical and optical performance of III–V high‐density integrated circuits and photonic devices. We have…”
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Observation of metal-oxide-semiconductor transistor operation using scanning capacitance microscopy by Nakakura, C. Y., Hetherington, D. L., Shaneyfelt, M. R., Shea, P. J., Erickson, A. N.

“…We report scanning capacitance microscopy (SCM) images of a working p-channel metal oxide semiconductor field effect transistor (P-MOSFET) during device…”
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SOI-enabled MEMS processes lead to novel mechanical, optical, and atomic physics devices by Herrera, G.V., Bauer, T., Blain, M.G., Dodd, P.E., Dondero, R., Garcia, E.J., Galambos, P.C., Hetherington, D.L., Hudgens, J.J., McCormick, F.B., Nielson, G.N., Nordquist, C.D., Okandan, M., Olsson, R.H., Platzbecker, M.R., Resnick, P.J., Shul, R.J., Shaw, M.J., Sullivan, C.T., Watts, M.R.

“…Beginning in the mid-1990s, Sandia National Laboratories began its migration to Silicon-on-Insulator (SOI) wafers to develop a radiation-hardened semiconductor…”
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Atomic force microscopy, lateral force microscopy, and transmission electron microscopy investigations and adhesion force measurements for elucidation of tungsten removal mechanisms by Stein, David J., Cecchi, Joseph L., Hetherington, Dale L.

“…We investigated various interactions between alumina and tungsten films that occur during chemical mechanical polishing (CMP). Atomic force microscopy surface…”
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Dependence of Oxide Pattern Density Variation on Motor Current Endpoint Detection during Shallow Trench Isolation Chemical Mechanical Planarization by Sorooshian, Jamshid, Philipossian, Ara, Stein, David J., Timon, Robert P., Hetherington, Dale L.

“…In this study, we evaluate the limitations associated with variable shallow trench isolation (STI) oxide pattern densities for accurate motor current endpoint…”
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