Search Results - "Herzinger, C. M."

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures by Hofmann, T., Kühne, P., Schöche, S., Chen, Jr-Tai, Forsberg, U., Janzén, E., Ben Sedrine, N., Herzinger, C. M., Woollam, J. A., Schubert, M., Darakchieva, V.

“…The temperature-dependence of free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in a AlGaN/GaN heterostructure…”
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Terahertz ellipsometry and terahertz optical-Hall effect by Hofmann, T., Herzinger, C.M., Tedesco, J.L., Gaskill, D.K., Woollam, J.A., Schubert, M.

“…Ellipsometry has been proven as an excellent tool for the precise and accurate determination of material optical properties in the spectral range from the far…”
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Polarization selection rules for inter-Landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect by Kühne, P, Darakchieva, V, Yakimova, R, Tedesco, J D, Myers-Ward, R L, Eddy, Jr, C R, Gaskill, D K, Herzinger, C M, Woollam, J A, Schubert, M, Hofmann, T

“…We report on the polarization selection rules of inter-Landau-level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm(-1)…”
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Terahertz optical-Hall effect for multiple valley band materials: n-type silicon by Kühne, P., Hofmann, T., Herzinger, C.M., Schubert, M.

“…The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields…”
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The optical Hall effect by Hofmann, T., Herzinger, C. M., Krahmer, C., Streubel, K., Schubert, M.

“…Classic electrical Hall effect measurements are standard for electrical characterization of free charge carriers in semiconductor layer structures. We…”
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Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry by Hofmann, T., Boosalis, A., Kühne, P., Herzinger, C. M., Woollam, J. A., Gaskill, D. K., Tedesco, J. L., Schubert, M.

“…We report noncontact, optical determination of free-charge carrier mobility, sheet density, and resistivity parameters in epitaxial graphene at room…”
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Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures by Schöche, S., Shi, Junxia, Boosalis, A., Kühne, P., Herzinger, C. M., Woollam, J. A., Schaff, W. J., Eastman, L. F., Schubert, M., Hofmann, T.

“…The free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas are exemplarily determined in the spectral range from 640…”
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Hole diffusion profile in a p-p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry by Hofmann, T., Herzinger, C. M., Tiwald, T. E., Woollam, J. A., Schubert, M.

“…Noninvasive optical measurement of hole diffusion profiles in p-p+ silicon homojunction is reported by ellipsometry in the terahertz (0.2–1.5 THz) and…”
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Characterization of biaxially-stretched plastic films by generalized ellipsometry by Elman, J.F., Greener, J., Herzinger, C.M., Johs, B.

“…An ellipsometric method for determining the optical constants and optic axis orientations of a biaxially stretched plastic film is described. This technique…”
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Control of etch depth in patterned semiconductor substrates using real time spectroscopic ellipsometry by Cho, S.-J., Snyder, P.G., Ianno, N.J., Herzinger, C.M., Johs, B.

“…Etch depth into bulk Si wafers was determined in real time using spectroscopic ellipsometry (SE). The mechanism that allows this is lateral interference,…”
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The semiconductor waveguide facet reflectivity problem by Herzinger, C.M., Lu, C.-C., DeTemple, T.A., Chew, W.C.

“…The problem of the facet reflectivity of a semiconductor slab waveguide is reexamined as an extension of Ikegami's original approach that includes…”
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On the semiconductor laser logarithmic gain-current density relation by DeTemple, T.A., Herzinger, C.M.

“…The simplified relation, alpha =G/sub 0/ In ( eta /sub i/J/J/sub 0/), between material gain alpha and current density J is shown to be a very good shape…”
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A multi-sample, multi-wavelength, multi-angle investigation of the interface layer between silicon and thermally grown silicon dioxide by Herzinger, C.M., Johs, B., McGahan, W.A., Paulson, W.

“…Utilizing a sequence of optical models with increasing complexity, the inclusion of an interface layer between silicon and thermally grown oxide for modeling…”
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Development of a parametric optical constant model for Hg1−xCdxTe for control of composition by spectroscopic ellipsometry during MBE growth by Johs, B, Herzinger, C.M, Dinan, J.H, Cornfeld, A, Benson, J.D

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Polarization Selection Rules for Inter-Landau-Level Transitions in Epitaxial Graphene Revealed by the Infrared Optical Hall Effect by Kühne, P., Darakchieva, V., Yakimova, R., Tedesco, J. D., Myers-Ward, R. L., Eddy, C. R., Gaskill, D. K., Herzinger, C. M., Woollam, J. A., Schubert, M., Hofmann, T.

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Conduction-band electron effective mass in Zn0.87Mn0.13Se measured by terahertz and far-infrared magnetooptic ellipsometry by Hofmann, T., Schade, U., Agarwal, K. C., Daniel, B., Klingshirn, C., Hetterich, M., Herzinger, C. M., Schubert, M.

“…We determine the electron effective mass parameter m*=0.086±0.004m0 of thin-film n-type low-chlorine-doped Zn0.87Mn0.13Se with free-charge-carrier…”
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Far-infrared-magneto-optic ellipsometry characterization of free-charge-carrier properties in highly disordered n-type Al0.19Ga0.33In0.48P by Hofmann, T., Schubert, M., Herzinger, C. M., Pietzonka, I.

“…For highly disordered n-type Al0.19Ga0.33In0.48P grown lattice matched to an undoped GaAs substrate, using far-infrared-magneto-optic generalized ellipsometry,…”
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Ellipsometry on Anisotropic Materials: Bragg Conditions and Phonons in Dielectric Helical Thin Films by Schubert, M., Herzinger, C.M.

“…This contribution presents 4 × 4 matrices for generalized ellipsometry analysis of dielectric helical thin films within the algebraic framework for arbitrary…”
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Low drive voltage GaAs quantum well electroabsorption modulators obtained with a displaced junction by Crook, A.C., Cockerill, T.M., Forbes, D.V., Herzinger, C.M., DeTemple, T.A., Coleman, J.J.

“…A reduction in the drive voltage of an electroabsorption waveguide modulator based on an AlGaAs/GaAs quantum well laser heterostructure is demonstrated by a…”
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Mueller-matrix characterization of liquid crystals by Hilfiker, J.N., Herzinger, C.M., Wagner, T., Marino, Antigone, Delgais, Guiseppe, Abbate, Giancarlo

“…Generalized spectroscopic ellipsometry (g-SE) has been applied to many anisotropic materials. This measurement is based on the 2×2 Jones matrix sample…”
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