Search Results - "Hertog, Brian"

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  1. 1

    Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film by Alema, Fikadu, Hertog, Brian, Ledyaev, Oleg, Volovik, Dmitry, Thoma, Grant, Miller, Ross, Osinsky, Andrei, Mukhopadhyay, Partha, Bakhshi, Sara, Ali, Haider, Schoenfeld, Winston V.

    “…We report on the fabrication and characterization of solar blind photodetectors (SBPs) based on undoped β‐Ga2O3 and Zn doped (∼5 × 1020 cm−3) β‐Ga2O3 (ZnGaO)…”
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    Journal Article
  2. 2

    Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film by Alema, Fikadu, Hertog, Brian, Mukhopadhyay, Partha, Zhang, Yuewei, Mauze, Akhil, Osinsky, Andrei, Schoenfeld, Winston V., Speck, James S., Vogt, Timothy

    Published in APL materials (01-02-2019)
    “…We report on a high performance Pt/n−Ga2O3/n+Ga2O3 solar blind Schottky photodiode that has been grown by metalorganic chemical vapor deposition. The active…”
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    Journal Article
  3. 3

    H2O vapor assisted growth of β-Ga2O3 by MOCVD by Alema, Fikadu, Zhang, Yuewei, Mauze, Akhil, Itoh, Takeki, Speck, James S., Hertog, Brian, Osinsky, Andrei

    Published in AIP advances (01-08-2020)
    “…The role of water (H2O) vapor in reducing background impurity concentration in epitaxial Ga2O3 thin films grown by metalorganic chemical vapor deposition…”
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    Journal Article
  4. 4

    Temperature and pulse duration effects on the growth of MgZnO via pulsed metal organic chemical vapor deposition by Alema, Fikadu, Hertog, Brian, Ledyaev, Oleg, Miller, Ross, Osinsky, Andrei, Schoenfeld, Winston V.

    Published in Japanese Journal of Applied Physics (01-03-2016)
    “…The effect of substrate temperature (TS) and pulse duration (PD) on Mg incorporation, surface quality, and photoresponse properties of MgZnO films grown via…”
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    Journal Article
  5. 5

    Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD by Alema, Fikadu, Hertog, Brian, Osinsky, Andrei, Mukhopadhyay, Partha, Toporkov, Mykyta, Schoenfeld, Winston V.

    Published in Journal of crystal growth (01-10-2017)
    “…•Epitaxial β-Ga2O3 thin film with high growth rate up to ∼10μm/hr was achieved.•Close coupled showerhead (CCS) MOCVD reactor was used to realize fast growth…”
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    Journal Article
  6. 6

    High responsivity solar blind photodetector based on high Mg content MgZnO film grown via pulsed metal organic chemical vapor deposition by Alema, Fikadu, Hertog, Brian, Ledyaev, Oleg, Volovik, Dmitry, Miller, Ross, Osinsky, Andrei, Bakhshi, Sara, Schoenfeld, Winston V.

    Published in Sensors and actuators. A. Physical. (01-10-2016)
    “…•High responsivity solar blind photodetector based on MgZnO film is realized.•Wurtzite MgZnO films with Mg content up 51% were used for detectors.•The cutoff…”
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    Journal Article
  7. 7

    Fast growth rate of epitaxial ß–Ga2O3 by close coupled showerhead MOCVD by Alema, Fikadu, Hertog, Brian, Osinsky, Andrei, Mukhopadhyay, Partha, Toporkov, Mykyta, Schoenfeld, Winston V

    Published in Journal of crystal growth (01-10-2017)
    “…We report on the growth of epitaxial β-Ga2O3 thin films on c-plane sapphire substrates using a close coupled showerhead MOCVD reactor. Ga(DPM)3 (DPM =…”
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    Journal Article
  8. 8

    Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film (Phys. Status Solidi A 5∕2017) by Alema, Fikadu, Hertog, Brian, Ledyaev, Oleg, Volovik, Dmitry, Thoma, Grant, Miller, Ross, Osinsky, Andrei, Mukhopadhyay, Partha, Bakhshi, Sara, Ali, Haider, Schoenfeld, Winston V.

    “…Solar blind UV photodetectors (SBPs) with a cutoff wavelength < 290 nm are of great interest for a variety of military and civilian applications. Previously,…”
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    Journal Article
  9. 9

    Solar blind photodetector based on epitaxial zinc doped Ga 2 O 3 thin film by Alema, Fikadu, Hertog, Brian, Ledyaev, Oleg, Volovik, Dmitry, Thoma, Grant, Miller, Ross, Osinsky, Andrei, Mukhopadhyay, Partha, Bakhshi, Sara, Ali, Haider, Schoenfeld, Winston V.

    “…We report on the fabrication and characterization of solar blind photodetectors (SBPs) based on undoped β‐Ga 2 O 3 and Zn doped (∼5 × 10 20  cm −3 ) β‐Ga 2 O 3…”
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    Journal Article
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    High-gain Zn sub(1-x)Mg sub(x) O-based ultraviolet photodetectors on Al sub(2)O sub(3) and LiGaO sub(2)substrates by Olson, Christopher S, Liu, Huiyong, Ledyaev, Oleg, Hertog, Brian, Osinsky, Andrei, Schoenfeld, Winston V

    “…We report the fabrication and characterization of highly responsive ZnMgO-based ultraviolet (UV) photodetectors in the metal-semiconductor-metal (MSM)…”
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    Journal Article
  13. 13

    High-gain Zn1-xMgx O-based ultraviolet photodetectors on Al2O3 and LiGaO2 substrates by Olson, Christopher S., Liu, Huiyong, Ledyaev, Oleg, Hertog, Brian, Osinsky, Andrei, Schoenfeld, Winston V.

    “…We report the fabrication and characterization of highly responsive ZnMgO‐based ultraviolet (UV) photodetectors in the metal–semiconductor–metal (MSM)…”
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    Journal Article
  14. 14

    Injection and Avalanche Electroluminescence of \hbox} \hbox} \hbox} \hbox} \hbox Multiple Quantum Wells by Sheng-Kun Zhang, Wubao Wang, Alfano, R.R., Dabiran, A.M., Osinsky, A., Wowchak, A.M., Hertog, B., Chow, P.P.

    “…Three periods of Al 0.1 Ga 0.9 N/Al 0.15 Ga 0.85 N multiple quantum wells (MQWs) were used as the active region of a p-i-n diode fabricated on 6H-SiC…”
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    Journal Article
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  17. 17

    Silicon-based rare earth-doped materials and devices grown by MBE by Chow, P., Jianwei Dong, Zaytsev, S., Osinsky, A., Hertog, B.

    “…Fabrication of Er doped materials deposited on silicon into LED is demonstrated. A strong infrared luminescence is observed at 1540 nm wavelength region. They…”
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    Conference Proceeding