Search Results - "Hertog, Brian"
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Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film
Published in Physica status solidi. A, Applications and materials science (01-05-2017)“…We report on the fabrication and characterization of solar blind photodetectors (SBPs) based on undoped β‐Ga2O3 and Zn doped (∼5 × 1020 cm−3) β‐Ga2O3 (ZnGaO)…”
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Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film
Published in APL materials (01-02-2019)“…We report on a high performance Pt/n−Ga2O3/n+Ga2O3 solar blind Schottky photodiode that has been grown by metalorganic chemical vapor deposition. The active…”
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H2O vapor assisted growth of β-Ga2O3 by MOCVD
Published in AIP advances (01-08-2020)“…The role of water (H2O) vapor in reducing background impurity concentration in epitaxial Ga2O3 thin films grown by metalorganic chemical vapor deposition…”
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Temperature and pulse duration effects on the growth of MgZnO via pulsed metal organic chemical vapor deposition
Published in Japanese Journal of Applied Physics (01-03-2016)“…The effect of substrate temperature (TS) and pulse duration (PD) on Mg incorporation, surface quality, and photoresponse properties of MgZnO films grown via…”
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Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD
Published in Journal of crystal growth (01-10-2017)“…•Epitaxial β-Ga2O3 thin film with high growth rate up to ∼10μm/hr was achieved.•Close coupled showerhead (CCS) MOCVD reactor was used to realize fast growth…”
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High responsivity solar blind photodetector based on high Mg content MgZnO film grown via pulsed metal organic chemical vapor deposition
Published in Sensors and actuators. A. Physical. (01-10-2016)“…•High responsivity solar blind photodetector based on MgZnO film is realized.•Wurtzite MgZnO films with Mg content up 51% were used for detectors.•The cutoff…”
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Fast growth rate of epitaxial ß–Ga2O3 by close coupled showerhead MOCVD
Published in Journal of crystal growth (01-10-2017)“…We report on the growth of epitaxial β-Ga2O3 thin films on c-plane sapphire substrates using a close coupled showerhead MOCVD reactor. Ga(DPM)3 (DPM =…”
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Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film (Phys. Status Solidi A 5∕2017)
Published in Physica status solidi. A, Applications and materials science (01-05-2017)“…Solar blind UV photodetectors (SBPs) with a cutoff wavelength < 290 nm are of great interest for a variety of military and civilian applications. Previously,…”
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Solar blind photodetector based on epitaxial zinc doped Ga 2 O 3 thin film
Published in Physica status solidi. A, Applications and materials science (01-05-2017)“…We report on the fabrication and characterization of solar blind photodetectors (SBPs) based on undoped β‐Ga 2 O 3 and Zn doped (∼5 × 10 20 cm −3 ) β‐Ga 2 O 3…”
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High-gain Zn sub(1-x)Mg sub(x) O-based ultraviolet photodetectors on Al sub(2)O sub(3) and LiGaO sub(2)substrates
Published in Physica status solidi. PSS-RRL. Rapid research letters (01-01-2015)“…We report the fabrication and characterization of highly responsive ZnMgO-based ultraviolet (UV) photodetectors in the metal-semiconductor-metal (MSM)…”
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High-gain Zn1-xMgx O-based ultraviolet photodetectors on Al2O3 and LiGaO2 substrates
Published in Physica status solidi. PSS-RRL. Rapid research letters (01-01-2015)“…We report the fabrication and characterization of highly responsive ZnMgO‐based ultraviolet (UV) photodetectors in the metal–semiconductor–metal (MSM)…”
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Injection and Avalanche Electroluminescence of \hbox} \hbox} \hbox} \hbox} \hbox Multiple Quantum Wells
Published in IEEE journal of selected topics in quantum electronics (01-07-2008)“…Three periods of Al 0.1 Ga 0.9 N/Al 0.15 Ga 0.85 N multiple quantum wells (MQWs) were used as the active region of a p-i-n diode fabricated on 6H-SiC…”
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The Maxwell relation and Eshelbýs conservation law for minimizers in elasticity theory
Published in Journal of elasticity (01-12-1989)Get full text
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Material symmetry and crystals
Published in Archive for rational mechanics and analysis (01-01-1990)Get full text
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Silicon-based rare earth-doped materials and devices grown by MBE
Published in First IEEE International Conference on Group IV Photonics, 2004 (2004)“…Fabrication of Er doped materials deposited on silicon into LED is demonstrated. A strong infrared luminescence is observed at 1540 nm wavelength region. They…”
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