Search Results - "Hersent, R"

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  1. 1

    160-GSa/s-and-Beyond 108-GHz-Bandwidth Over-2-Vppd Output-Swing 0.5-μm InP DHBT 2:1 AMUX-Driver for Next-Generation Optical Communications by Hersent, R., Konczykowska, A., Jorge, F., Blache, F., Nodjiadjim, V., Riet, M., Mismer, C., Renaudier, J.

    “…This letter reports on a 108-GHz bandwidth 0.5-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> InP DHBT…”
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    Journal Article
  2. 2

    0.7- \mu m InP DHBT Technology With 400-GHz } and } and 4.5-V BVCE0 for High Speed and High Frequency Integrated Circuits by Nodjiadjim, V., Riet, M., Mismer, C., Hersent, R., Jorge, F., Konczykowska, A., Dupuy, J.-Y.

    “…We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both f T and f MAX of 400 GHz as well as a high fabrication yield…”
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    Journal Article
  3. 3
  4. 4

    Analog-Multiplexer (AMUX) circuit realized in InP DHBT technology for high order electrical modulation formats (PAM-4, PAM-8) by Hersent, R., Konczykowska, A., Jorge, F., Riet, M., Mismer, C., Nodjiadjim, V., Duval, B., Dupuy, J-Y.

    “…Analog-Multiplexers (AMUXs) are attractive architectures to increase electro-optical transmitters' analog bandwidth through the time interleaving of several…”
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    Conference Proceeding
  5. 5

    Research Toward Wafer-Scale 3D Integration of InP Membrane Photonics With InP Electronics by Abdi, S., Nodjiadjim, V., Hersent, R., Riet, M., Mismer, C., de Vries, T., Williams, K. A., Jiao, Y.

    “…In this study, we focus on the development of key processes towards wafer-scale 3-dimentional/vertical (3D) integration of Indium-Phosphide (InP) photonic…”
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    Journal Article
  6. 6

    0.7-$\mu$ m InP DHBT Technology With 400-GHz ${f}_{{T}}$ and ${f}_{\text{MAX}}$ and 4.5-V BV CE0 for High Speed and High Frequency Integrated Circuits by Nodjiadjim, V., Riet, M., Mismer, C., Hersent, R., Jorge, F., Konczykowska, A., Dupuy, J.-Y.

    “…We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both f T and f MAX of 400 GHz as well as a high fabrication yield…”
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    Journal Article
  7. 7

    0.7-[Formula Omitted]m InP DHBT Technology With 400-GHz [Formula Omitted] and [Formula Omitted] and 4.5-V BVCE0 for High Speed and High Frequency Integrated Circuits by Nodjiadjim, V, Riet, M, Mismer, C, Hersent, R, Jorge, F, Konczykowska, A, J-Y Dupuy

    “…We report the performances of a 0.7-[Formula Omitted] InP/GaInAs DHBT developed in III-V Lab demonstrating both [Formula Omitted] and [Formula Omitted] of 400…”
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    Journal Article
  8. 8

    160-GSa/s-and-Beyond 108-GHz-Bandwidth Over-2-V ppd Output-Swing 0.5-μm InP DHBT 2:1 AMUX-Driver for Next-Generation Optical Communications by Hersent, R., Konczykowska, A., Jorge, F., Blache, F., Nodjiadjim, V., Riet, M., Mismer, C., Renaudier, J.

    “…This letter reports on a 108-GHz bandwidth 0.5- μm InP DHBT analog-multiplexer-driver (AMUX-driver). To the best of the authors’ knowledge, this 2:1…”
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    Journal Article
  9. 9

    A Compensated Finite-Ground Elevated Coplanar Waveguide Interconnect Strategy for InP Based Integrated Circuits Above 100 GHz by Johansen, T. K., Hersent, R., Nodjiadjim, V., Riet, M., Mismer, C., Ardouin, B.

    “…In this paper, a low-loss interconnect strategy for InP integrated circuits operating above 100 GHz is proposed. The interconnect strategy is based upon…”
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    Conference Proceeding
  10. 10

    Optimization methodology of 112-Gbaud photoreceivers for Tb / s-class optical communications by Chauvet, A., Hersent, R., Blache, F., Konczykowska, A., Ardouin, B., Kasbari, A.-E., Ouslimani, A.

    “…Most photoreceivers' front ends rely on an assembly of a photodiode (PD) and a transimpedance amplifier (TIA) to convert the received optical signal into an…”
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    Conference Proceeding
  11. 11

    112 GBaud (224 Gb/s) large output swing InP DHBT PAM-4 DAC-driver by Konczykowska, A., Hersent, R., Jorge, F., Riet, M., Nodjiadjim, V., Mismer, C., Bolognesi, C. R., Ostinelli, O., Dupuy, J.-Y.

    “…In this paper, we report on the design, optimisation and and electrical measurements of a PAM-4 DAC-driver fabricated in 0.7-μm InP/GaAsSb DHBT technology,…”
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    Conference Proceeding
  12. 12
  13. 13

    InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5Vppd-Swing PAM-4 DAC-Driver by Bolognesi, C. R., Arabhavi, A. M., Hersent, R., Hamzeloui, S., Jorge, F., Wen, X., Riet, M., Luisier, M., Nodjiadjim, V., Ciabattini, F., Mismer, C., Ostinelli, O., Konczykowska, A.

    “…"Type-II" InP/GaAsSb DHBTs are the first non-GaInAs -based transistors to show oscillation frequencies > 1 THz with the associated benefits of higher breakdown…”
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    Conference Proceeding