Search Results - "Herro, Z. G."
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Seeded growth of AlN single crystals by physical vapor transport
Published in Journal of crystal growth (01-01-2006)“…Seeded growth of AlN single crystals was achieved in an induction-heated, high-temperature reactor. The growth process was based on physical vapor transport…”
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Journal Article Conference Proceeding -
2
Growth of AlN single crystalline boules
Published in Journal of crystal growth (01-09-2010)“…We have obtained high-quality, crack-free AlN wafers using a convex thermal field inside the growth chamber. Free-standing AlN boules of 15 mm in height and 15…”
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Journal Article -
3
Effect of thermal environment evolution on AlN bulk sublimation crystal growth
Published in Journal of crystal growth (01-08-2007)“…To obtain a large and thick AlN single crystal during sublimation growth, it is very important to maintain the thermal environment suitable for growth inside…”
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Journal Article -
4
Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient
Published in Journal of crystal growth (15-02-2004)“…The dependence of the single-crystalline yield on the thermal field during physical vapour transport growth of SiC was investigated systematically. It is shown…”
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Journal Article -
5
Growth of 6H–SIC crystals along the [ 0 1 1 ¯ 5 ] direction
Published in Journal of crystal growth (01-03-2005)“…We have investigated bulk growth of 6H–SiC crystals along the [ 0 1 1 ¯ 5 ] direction. The ( 0 1 1 ¯ 5 ) facet was obtained in a natural way during growth…”
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Journal Article -
6
AFM investigation of interface step structures on PVT-grown (0001)Si 6H–SiC crystals
Published in Journal of crystal growth (15-09-2004)“…An AFM investigation of entire growth surfaces of PVT grown (0001)Si 6H–SiC crystals has revealed a number of typical growth interface structures. While step…”
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Journal Article -
7
Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport
Published in Journal of electronic materials (01-07-2006)“…Seeded growth of AlN single crystals was demonstrated in an induction-heated, high-temperature reactor via a physical vapor transport (PVT) process. AlN seeds…”
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Journal Article -
8
Liquid phase homoepitaxial growth of 6H-SiC on ( 0 1 1 ¯ 5 ) oriented substrates
Published in Journal of crystal growth (01-09-2005)“…Liquid phase epitaxy (LPE) of SiC from a diluted Si-based melt was performed on wafers with ( 0 1 1 ¯ 5 ) orientation on physical vapor transport (PVT) grown…”
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Journal Article -
9
Seeded growth of AlN on N- and Al-polar 〈 0 0 0 1 〉 AlN seeds by physical vapor transport
Published in Journal of crystal growth (15-01-2006)“…We demonstrated seeded growth of AlN on large-area Al- and N-polar <0 0 0 1>-oriented AlN seeds using the physical vapor transport method (PVT). In both cases,…”
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Journal Article -
10
Orientation-dependent phonon observation in single-crystalline aluminum nitride
Published in Applied physics letters (28-03-2005)“…In this study, we present a microspectroscopic investigation performed on different facets of a self-nucleated aluminum nitride (AlN) single crystal. We show…”
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Journal Article -
11
Investigation of mass transport during PVT growth of SiC by 13C labeling of source material
Published in Journal of crystal growth (01-11-2003)“…We have investigated experimentally mass transport during physical vapor transport growth of silicon carbide (SiC). 13C was used as trace in order to determine…”
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Journal Article -
12
Seeded Growth of AIN Crystals on Nonpolar Seeds via Physical Vapor Transport
Published in Journal of electronic materials (01-07-2006)“…Seeded growth of AlN single crystals was demonstrated in an induction-heated, high-temperature reactor via a physical vapor transport (PVT) process. AlN seeds…”
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Journal Article -
13
Seeded growth of AlN on N- and Al-polar AlN seeds by physical vapor transport
Published in Journal of crystal growth (15-01-2006)“…We demonstrated seeded growth of AlN on large-area Al- and N-polar < 0001 > -oriented AlN seeds using the physical vapor transport method (PVT). In both cases,…”
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Journal Article -
14
Lattice-plane curvature and small-angle grain boundaries in SiC bulk crystals
Published in Journal of applied crystallography (01-02-2006)“…SiC crystals grown by the physical vapour transport process along the [001] direction show a curvature of the crystal growth front in correspondence with the…”
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Journal Article