Search Results - "Herro, Z. G."

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  1. 1

    Seeded growth of AlN single crystals by physical vapor transport by Zhuang, D., Herro, Z.G., Schlesser, R., Sitar, Z.

    Published in Journal of crystal growth (01-01-2006)
    “…Seeded growth of AlN single crystals was achieved in an induction-heated, high-temperature reactor. The growth process was based on physical vapor transport…”
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    Journal Article Conference Proceeding
  2. 2

    Growth of AlN single crystalline boules by Herro, Z.G., Zhuang, D., Schlesser, R., Sitar, Z.

    Published in Journal of crystal growth (01-09-2010)
    “…We have obtained high-quality, crack-free AlN wafers using a convex thermal field inside the growth chamber. Free-standing AlN boules of 15 mm in height and 15…”
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    Journal Article
  3. 3

    Effect of thermal environment evolution on AlN bulk sublimation crystal growth by Cai, D., Zheng, L.L., Zhang, H., Zhuang, D., Herro, Z.G., Schlesser, R., Sitar, Z.

    Published in Journal of crystal growth (01-08-2007)
    “…To obtain a large and thick AlN single crystal during sublimation growth, it is very important to maintain the thermal environment suitable for growth inside…”
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    Journal Article
  4. 4

    Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient by Herro, Z.G., Epelbaum, B.M., Bickermann, M., Masri, P., Winnacker, A.

    Published in Journal of crystal growth (15-02-2004)
    “…The dependence of the single-crystalline yield on the thermal field during physical vapour transport growth of SiC was investigated systematically. It is shown…”
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    Journal Article
  5. 5

    Growth of 6H–SIC crystals along the [ 0 1 1 ¯ 5 ] direction by Herro, Z.G., Epelbaum, B.M., Bickermann, M., Seitz, C., Magerl, A., Winnacker, A.

    Published in Journal of crystal growth (01-03-2005)
    “…We have investigated bulk growth of 6H–SiC crystals along the [ 0 1 1 ¯ 5 ] direction. The ( 0 1 1 ¯ 5 ) facet was obtained in a natural way during growth…”
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    Journal Article
  6. 6

    AFM investigation of interface step structures on PVT-grown (0001)Si 6H–SiC crystals by Herro, Z.G., Epelbaum, B.M., Weingärtner, R., Bickermann, M., Masri, P., Winnacker, A.

    Published in Journal of crystal growth (15-09-2004)
    “…An AFM investigation of entire growth surfaces of PVT grown (0001)Si 6H–SiC crystals has revealed a number of typical growth interface structures. While step…”
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    Journal Article
  7. 7

    Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport by ZHUANG, D, HERRO, Z. G, SCHLESSER, R, RAGHOTHAMACHAR, B, DUDLEY, M, SITAR, Z

    Published in Journal of electronic materials (01-07-2006)
    “…Seeded growth of AlN single crystals was demonstrated in an induction-heated, high-temperature reactor via a physical vapor transport (PVT) process. AlN seeds…”
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    Journal Article
  8. 8

    Liquid phase homoepitaxial growth of 6H-SiC on ( 0 1 1 ¯ 5 ) oriented substrates by Filip, O., Epelbaum, B., Herro, Z.G., Bickermann, M., Winnacker, A.

    Published in Journal of crystal growth (01-09-2005)
    “…Liquid phase epitaxy (LPE) of SiC from a diluted Si-based melt was performed on wafers with ( 0 1 1 ¯ 5 ) orientation on physical vapor transport (PVT) grown…”
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    Journal Article
  9. 9

    Seeded growth of AlN on N- and Al-polar 〈 0 0 0 1 〉 AlN seeds by physical vapor transport by Herro, Z.G., Zhuang, D., Schlesser, R., Collazo, R., Sitar, Z.

    Published in Journal of crystal growth (15-01-2006)
    “…We demonstrated seeded growth of AlN on large-area Al- and N-polar <0 0 0 1>-oriented AlN seeds using the physical vapor transport method (PVT). In both cases,…”
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    Journal Article
  10. 10

    Orientation-dependent phonon observation in single-crystalline aluminum nitride by Bickermann, M., Epelbaum, B. M., Heimann, P., Herro, Z. G., Winnacker, A.

    Published in Applied physics letters (28-03-2005)
    “…In this study, we present a microspectroscopic investigation performed on different facets of a self-nucleated aluminum nitride (AlN) single crystal. We show…”
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    Journal Article
  11. 11

    Investigation of mass transport during PVT growth of SiC by 13C labeling of source material by Herro, Z.G., Wellmann, P.J., Püsche, R., Hundhausen, M., Ley, L., Maier, M., Masri, P., Winnacker, A.

    Published in Journal of crystal growth (01-11-2003)
    “…We have investigated experimentally mass transport during physical vapor transport growth of silicon carbide (SiC). 13C was used as trace in order to determine…”
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    Journal Article
  12. 12

    Seeded Growth of AIN Crystals on Nonpolar Seeds via Physical Vapor Transport by Zhuang, D, Herro, Z G, Schlesser, R, Raghothamachar, B

    Published in Journal of electronic materials (01-07-2006)
    “…Seeded growth of AlN single crystals was demonstrated in an induction-heated, high-temperature reactor via a physical vapor transport (PVT) process. AlN seeds…”
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    Journal Article
  13. 13

    Seeded growth of AlN on N- and Al-polar AlN seeds by physical vapor transport by Herro, Z G, Zhuang, D, Schlesser, R, Collazo, R, Sitar, Z

    Published in Journal of crystal growth (15-01-2006)
    “…We demonstrated seeded growth of AlN on large-area Al- and N-polar < 0001 > -oriented AlN seeds using the physical vapor transport method (PVT). In both cases,…”
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    Journal Article
  14. 14

    Lattice-plane curvature and small-angle grain boundaries in SiC bulk crystals by Hock, Rainer, Herro, Ziad G., Magerl, Andreas, Epelbaum, Boris M., Seitz, Christoph

    Published in Journal of applied crystallography (01-02-2006)
    “…SiC crystals grown by the physical vapour transport process along the [001] direction show a curvature of the crystal growth front in correspondence with the…”
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    Journal Article