Search Results - "Heo, Sunwoo"

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  1. 1

    ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors by Lee, Lynn, Hwang, Jeongwoon, Jung, Jin Won, Kim, Jongchan, Lee, Ho-In, Heo, Sunwoo, Yoon, Minho, Choi, Sungju, Van Long, Nguyen, Park, Jinseon, Jeong, Jae Won, Kim, Jiyoung, Kim, Kyung Rok, Kim, Dae Hwan, Im, Seongil, Lee, Byoung Hun, Cho, Kyeongjae, Sung, Myung Mo

    Published in Nature communications (30-04-2019)
    “…A quantum confined transport based on a zinc oxide composite nanolayer that has conducting states with mobility edge quantization is proposed and was applied…”
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    Journal Article
  2. 2

    Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride by Ahmed, Faisal, Heo, Sunwoo, Yang, Zheng, Ali, Fida, Ra, Chang Ho, Lee, Ho‐In, Taniguchi, Takashi, Hone, James, Lee, Byoung Hun, Yoo, Won Jong

    Published in Advanced functional materials (04-10-2018)
    “…The dielectric dispersion of a material holds significant importance for the understanding of basic material characteristics and the design parameters of a…”
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    Journal Article
  3. 3

    Time Domain Reflectometry Analysis of the Dispersion of Metal-Insulator-Metal Capacitance by Jinwoo Noh, Seung Mo Kim, Sunwoo Heo, Soo Cheol Kang, Yonghun Kim, Young Gon Lee, Hokyung Park, Seokkiu Lee, Byoung Hun Lee

    Published in IEEE electron device letters (01-04-2017)
    “…The capacitor dielectric dispersion characteristic has become an important design parameter, because the effective dielectric constant of a high-k dielectric…”
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    Journal Article
  4. 4

    Graphene–ZnO:N barristor on a polyethylene naphthalate substrate by Hwang, Hyeon Jun, Heo, Sunwoo, Yoo, Won Beom, Lee, Byoung Hun

    Published in AIP advances (01-01-2018)
    “…Graphene–ZnO:N Schottky junction barristors are fabricated on a flexible polyethylene naphthalate substrate utilizing a low thermal budget integration process…”
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    Journal Article
  5. 5

    Direct Defect-Level Analysis of Metal-Insulator-Metal Capacitor Using Internal Photoemission Spectroscopy by Yoo, Tae Jin, Hwang, Hyeon Jun, Kang, Soo Cheol, Heo, Sunwoo, Lee, Ho-In, Lee, Young Gon, Park, Hokyung, Lee, Byoung Hun

    “…Barrier height (<inline-formula> <tex-math notation="LaTeX">\phi _{b} </tex-math></inline-formula>), trap state, bandgap (<inline-formula> <tex-math…”
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    Journal Article
  6. 6

    Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifier by Heo, Sunwoo, Kwon, Min Gyu, Lee, Ho-In, Kim, Cihyun, Kim, Seung Mo, Chang, Kyoung Eun, Lee, Yongsu, Lee, Byoung Hun

    Published in AIP advances (01-09-2019)
    “…Tunable DC voltage control circuit based on a half-wave rectifier was developed using a graphene–germanium barristor. The output DC voltage level could be…”
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    Journal Article
  7. 7

    Gate‐Controlled Graphene–Silicon Schottky Junction Photodetector by Chang, Kyoung Eun, Yoo, Tae Jin, Kim, Cihyun, Kim, Yun Ji, Lee, Sang Kyung, Kim, So‐Young, Heo, Sunwoo, Kwon, Min Gyu, Lee, Byoung Hun

    “…Various photodetectors showing extremely high photoresponsivity have been frequently reported, but many of these photodetectors could not avoid the…”
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    Journal Article
  8. 8

    Ternary Full Adder Using Multi-Threshold Voltage Graphene Barristors by Heo, Sunwoo, Kim, Sunmean, Kim, Kiyung, Lee, Hyeji, Kim, So-Young, Kim, Yun Ji, Kim, Seung Mo, Lee, Ho-In, Lee, Segi, Kim, Kyung Rok, Kang, Seokhyeong, Lee, Byoung Hun

    Published in IEEE electron device letters (01-12-2018)
    “…Ternary logic circuit has been studied for several decades because it can provide simpler circuits and subsequently lower power consumption via succinct…”
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    Journal Article
  9. 9

    Non-destructive defect level analysis of graphene using amplitude-modulated discharge current analysis by Kim, Seung-Mo, Lee, Ho-In, Lee, Yongsu, Kim, So-Young, Yoo, Tae Jin, Heo, Sunwoo, Kang, Soo Cheol, Hwang, Hyeon Jun, Lee, Byoung Hun

    Published in Carbon (New York) (01-07-2021)
    “…The intrinsic characteristics of novel devices and materials are often misunderstood due to the characterization methods which are developed to analyze…”
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    Journal Article
  10. 10

    High‐Responsivity Near‐Infrared Photodetector Using Gate‐Modulated Graphene/Germanium Schottky Junction by Chang, Kyoung Eun, Kim, Cihyun, Yoo, Tae Jin, Kwon, Min Gyu, Heo, Sunwoo, Kim, So‐Young, Hyun, Yujun, Yoo, Jung Il, Ko, Heung Cho, Lee, Byoung Hun

    Published in Advanced electronic materials (01-06-2019)
    “…A high‐responsivity near‐infrared photodetector is demonstrated using a transparent ZnO top gate‐modulated graphene/Ge Schottky junction. The responsivity of a…”
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    Journal Article
  11. 11

    Pulsed KrF laser-assisted direct deposition of graphitic capping layer for Cu interconnect by Cho, Chunhum, Lee, Sang Kyung, Yoo, Tae Jin, Heo, Sunwoo, Hwang, Hyeon Jun, Kang, Chang Goo, Ham, Moon-Ho, Lee, Byoung Hun

    Published in Carbon (New York) (01-10-2017)
    “…A graphitic capping layer was successfully formed on top of Cu interconnects at room temperature, using a pulsed KrF laser. The change in temperature of the Cu…”
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    Journal Article
  12. 12

    Very‐Low‐Temperature Integrated Complementary Graphene‐Barristor‐Based Inverter for Thin‐Film Transistor Applications by Heo, Sunwoo, Lee, Ho‐In, Lee, Hyeji, Kim, Seung‐Mo, Kim, Kiyung, Kim, Yun Ji, Kim, So‐Young, Kim, Ji Hwan, Yoon, Myung‐Han, Lee, Byoung Hun

    Published in Annalen der Physik (01-10-2018)
    “…Complementary graphene‐barristor‐based inverters using n‐type ZnO:N and p‐type dinaphtho‐[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene semiconductor layers are…”
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    Journal Article
  13. 13

    Graphene Photodetectors: High‐Responsivity Near‐Infrared Photodetector Using Gate‐Modulated Graphene/Germanium Schottky Junction (Adv. Electron. Mater. 6/2019) by Chang, Kyoung Eun, Kim, Cihyun, Yoo, Tae Jin, Kwon, Min Gyu, Heo, Sunwoo, Kim, So‐Young, Hyun, Yujun, Yoo, Jung Il, Ko, Heung Cho, Lee, Byoung Hun

    Published in Advanced electronic materials (01-06-2019)
    “…In article number 1800957, K. E. Chang et al. report that photodetector cells fabricated with a graphene layer between the semiconductor and gate dielectric…”
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    Journal Article
  14. 14

    Demonstration of ternary devices and circuits using dual channel graphene barristors by Kim, So-Young, Heo, Sunwoo, Kim, Kiyung, Son, Myungwoo, Kim, Seung-Mo, Lee, Ho-In, Lee, Yongsu, Hwang, Hyeon Jun, Ham, Moon-Ho, Lee, Byoung Hun

    “…Graphene barristors with two parallel connected n-type and undoped graphene channels are used to build a ternary logic switch. Three distinctly separated out…”
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    Conference Proceeding
  15. 15

    Design of Ratioless Ternary Inverter Using Graphene Barristor by Shim, Chang-Hoo, Heo, Sunwoo, Noh, Jinwoo, Kim, Yun Ji, Kim, So-Young, Khan, Abdul Karim, Lee, Byoung Hun

    “…This study proposes a design of a ternary logic inverter using graphene barristor (GB). To design a multiple-valued logic gate, controlling threshold voltages…”
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    Conference Proceeding Journal Article