Search Results - "Hengehold, R.L."

Structural and optical characterization of Si-implanted Al 0.18Ga 0.82N by Ryu, Mee-Yi, Yeo, Y.K., Hengehold, R.L.

“…Both structural and optical activation studies of Si-implanted Al 0.18Ga 0.82N have been made as a function of anneal temperature by using the x-ray rocking…”
Get full text

Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al x Ga1−x N with High Aluminum Mole Fraction by Moore, E.A., Yeo, Y.K., Ryu, Mee-Yi, Hengehold, R.L.

Get full text

Structural and optical characterization of Si-implanted Al0.18Ga0.82N by RYU, Mee-Yi, YEO, Y. K, HENGEHOLD, R. L

Get full text

Electrical and optical activation studies of high dose Si-implanted Al 0.18Ga 0.82N by Ryu, Mee-Yi, Yeo, Y.K., Marciniak, M.A., Hengehold, R.L.

“…Both electrical and optical activation studies of Si-implanted Al 0.18Ga 0.82N have been made as a function of anneal time and anneal temperature to obtain…”
Get full text

Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted AlxGa1−xN with High Aluminum Mole Fraction by Moore, E.A., Yeo, Y.K., Ryu, Mee-Yi, Hengehold, R.L.

“…Electrical activation studies of Al x Ga 1− x N ( x  = 0.45 and 0.51) implanted with Si for n -type conductivity have been made as a function of ion dose and…”
Get full text

Temperature-Dependent Studies of Si-Implanted Al0.33Ga0.67N with Different Annealing Temperatures and Times by Moore, E.A., Yeo, Y.K., Gruen, G.J., Ryu, Mee-Yi, Hengehold, R.L.

“…Electrical activation studies were carried out on Si-implanted Al 0.33 Ga 0.67 N as a function of ion dose, annealing temperature, and annealing time. The…”
Get full text

Electrical and optical activation studies of high dose Si-implanted Al0.18Ga0.82N by RYU, Mee-Yi, YEO, Y. K, MARCINIAK, M. A, HENGEHOLD, R. L

Get full text

Optical study of implantation damage recovery from Si-implanted GaN by Fellows, James A., Yeo, Y.K., Ryu, Mee-Yi, Hengehold, R.L.

“…Comprehensive and systematic optical activation studies of Si-implanted GaN grown on sapphire substrates have been made as a function of ion dose and anneal…”
Get full text

Electrical and optical investigation of MBE grown Si-doped Al xGa 1− xN as a function of Al mole fraction up to 0.5 by Ahoujja, M., McFall, J.L., Yeo, Y.K., Hengehold, R.L., Van Nostrand, J.E.

“…Si-doped Al x Ga 1− x N grown by gas source MBE was investigated as a function of Al mole fraction up to 0.5 using temperature dependent Hall effect (TDH) and…”
Get full text

Optical investigation of MBE grown Si-doped Al xGa 1− xN as a function of nominal Al mole fraction up to 0.5 by McFall, J.L, Hengehold, R.L, Yeo, Y.K, Van Nostrand, J.E, Saxler, A.W

“…Al x Ga 1− x N epitaxial films were grown by gas source molecular beam epitaxy and investigated as a function of Al mole fraction. Cathodoluminescence,…”
Get full text

Electrical and optical investigation of MBE grown Si-doped AlxGa1-xN as a function of Al mole fraction up to 0.5 by AHOUJJA, M, MCFALL, J. L, YEO, Y. K, HENGEHOLD, R. L, VAN NOSTRAND, J. E

Get full text

Optical investigation of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5 by McFall, J.L, Hengehold, R.L, Yeo, Y.K, Van Nostrand, J.E, Saxler, A.W

Get full text

The growth and characterization of Si 1 − xGe x multiple quantum wells on Si(110) and Si(111) by Thompson, P.E., Kreifels, T.L., Gregg, M., Hengehold, R.L., Yeo, Y.K., Simons, D.S, Twigg, M.E., Fatemi, M., Hobart, K.

“…Undoped and boron-doped multiple quantum well heterostructures composed of Si 1 − x Ge x have been grown on Si(110) and Si(111) substrates. Photoluminescence…”
Get full text

The growth and characterization of Si1-xGex multiple quantum wells on Si(110) and Si(111) by THOMPSON, P. E, KREIFELS, T. L, GREGG, M, HENGEHOLD, R. L, YEO, Y. K, SIMONS, D. S, TWIGG, M. E, FATEMI, M, HOBART, K

Get full text

Electrical and optical activation studies of Si-implanted Al/sub x/Ga/sub 1-x/N by Hall-effect and photoluminescence measurements by Mee-Yi Ryu, Yeo, Y.K., Chitwood, E.A., Hengehold, R.L., Steiner, T.D.

“…Electrical and optical activation studies of Si-implanted Al/sub x/Ga/sub 1-x/N have been made as a function of ion dose, anneal temperature and anneal time…”
Get full text

Electrical and optical activation studies of Si-implanted Al/sub x/Ga/sub 1-x/N by Hall-effect and photoluminescence measurements by Ryu, M.-Y., Chitwood, E.A., Yung Kee Yeo, Hengehold, R.L., Steiner, T.

“…Ion-implanted Al/sub x/Ga/sub 1-x/N has been studied much less compared to GaN, and thus very little is known about implanted Al/sub x/Ga/sub 1-x/N. Therefore,…”
Get full text

Influence of arsenic doping on the electrical properties of GaN epitaxial layers grown by MOCVD by Ahoujja, M., Yeo, Y.K., Hengehold, R.L., Guido, L.J., Mitev, P., Johnstone, D.K., Kim, Y.H.

“…The influence of arsenic doping on the electrical properties of GaN films grown on sapphire substrates by metalorganic chemical vapor deposition has been…”
Get full text