Search Results - "Heng, C.L."

Effects of Yb doping on the structure and near band-edge emission of ZnO thin films on Si after high temperature annealing by Heng, C.L., Zhao, C.N., Zhang, L., Xiang, W., Su, W.Y., Yin, H.X., Gao, Y.K., Yin, P.G., Finstad, T.G.

“…In this work, we have investigated the effects of ytterbium (Yb) doping concentration on the structure and near band-edge (NBE) photoluminescence (PL) of ZnO…”
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On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment by Zhang, L., Heng, C.L., Zhao, C.N., Su, W.Y., Gao, Y.K., Yin, P.G., Finstad, T.G.

“…•The UV photoluminescence (PL) emission from ZnO films on Si is enhanced by high temperature heat treatment up to 1000 °C.•The UV PL enhancement is increased…”
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Electrical characteristics of a metal–insulator–semiconductor memory structure containing Ge nanocrystals by Heng, C.L., Finstad, T.G.

“…A metal–insulator–semiconductor structure device with Ge nanocrystals in SiO 2 was synthesized and the electrical characteristics were investigated…”
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Effects of ytterbium doping on the ultraviolet emissions of MgZnO films prepared by magnetron sputtering by Heng, C.L., Li, X.L., Wang, X., Su, W.Y., Finstad, T.G.

“…In this work, we studied the effects of rare earth ytterbium (Yb) doping on the structure and ultraviolet (UV) emission properties of MgZnO films deposited by…”
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Effect of Eu doping on the near band edge emission of Eu doped ZnO thin films after high temperature annealin by Heng, C.L, Xiang, W, Su, W.Y, Gao, Y.K, Yin, P.G, Finstad, Terje

“…We studied the effect of europium (Eu) doping on the near band edge emission of ZnO thin films, fabricated by sputtering and high temperatures annealing. The…”
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Effect of Eu doping on the near band edge emission of Eu doped ZnO thin films after high temperature annealing by Heng, C.L., Xiang, W., Su, W.Y., Gao, Y.K., Yin, P.G., Finstad, T.G.

“…We studied the effect of europium (Eu) doping on the near band edge emission of ZnO thin films, fabricated by sputtering and high temperatures annealing. The…”
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Intense ultraviolet photoluminescent emission from Yb doped ZnO thin films on Si after high temperature annealing by Heng, C.L., Wang, T., Su, W.Y., Wu, H.C., Yang, M.C., Deng, L.G., Yin, P.G., Finstad, T.G.

“…We report that the near band edge ultra-violet (UV) emission of ZnO sputtered films on Si can be enhanced greatly by incorporating about 5 at.% ytterbium in…”
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Strong enhancement of ultra-violet emission by Ce doping of ZnO sputtered films by Heng, C.L., Wang, T., Li, H., Liu, J.J., Zhu, J.W., Ablimit, A., Su, W.Y., Wu, H.C., Yin, P.G., Finstad, T.G.

“…We report that ultra-violet (UV) emission of ZnO can be made much more intense by incorporating Ce in the ZnO films. After annealing at 1100°C in N2 gas, the…”
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The formation of Yb silicates and its luminescence in Yb heavily doped silicon oxides after high temperature annealing by Heng, C.L., Li, J.T., Su, W.Y., Han, Z., Yin, P.G., Finstad, T.G.

“…We report on the formation of ytterbium (Yb) silicates and its photoluminescence (PL) properties for heavily Yb doped Si oxide films after various annealings…”
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A 55nm SAW-Less NB-IoT CMOS Transceiver in an RF-SoC with Phase Coherent RX and Polar Modulation TX by Tseng, P.S., Shen, S.C., Kuo, C.M., Heng, C.L., Dehng, G.K., Yang, W., Wu, M.J., Jin, L.M., Li, D.P., Low, E.C., Hsiao, C.H., Lin, H.T., Yang, K.H.

“…A SAW-Less NB-IoT transceiver for IoT devices with >10 years battery life and >164dB MCL is presented. Tunable RX Front-end supports 26 NB-IoT bands, achieves…”
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The formation of Ge nanocrystals in a metal–insulator–semiconductor structure and its memory effect by Heng, C.L., Liu, Y.J., Wee, A.T.S., Finstad, T.G.

“…After rapid thermal annealing of an ultra-thin germanium (Ge) layer in a tri-layer insulator structure at 1000°C in argon, the formation of Ge nanocrystals in…”
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Charge-storage effects in a metal-insulator-semi-conductor structure containing germanium nano-crystals formed by rapid thermal annealing of an electron-beam evaporated germanium layer by HENG, C. L, TJIU, W. W, FINSTAD, T. G

“…Charge-storage effects in a metal-insulator-semi-conductor device containing germanium (Ge) nano-crystals were investigated. The Ge nano-crystals were formed…”
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The 1.54-{mu}m photoluminescence from an (Er, Ge) co-doped SiO{sub 2} film deposited on Si by rf magnetron sputtering by Heng, C.L., Finstad, T.G., Storaas, P., Li, Y.J., Gunnaes, A.E., Nilsen, O., SINTEF ICT, Department of Microsystems and Nanotechnology, N-0314 Oslo, Centre for Materials Science and Nanotechnology, Department of Physics, University of Oslo, N-0349, Department of Chemistry, University of Oslo, N-0315

“…In this work, we report on quite strong 1.54-{mu}m photoluminescence (PL) from an (Er, Ge) co-doped SiO{sub 2} film deposited by rf magnetron sputtering. The…”
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Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO 2/pure Ge/rapid thermal oxide memory structure by Heng, C.L., Teo, L.W., Ho, Vincent, Tay, M.S., Lei, Y., Choi, W.K., Chim, W.K.

“…A metal-insulator-semiconductor device with a tri-layer structure consisting of sputtered silicon dioxide (SiO 2) (∼50 nm)–evaporated pure germanium (Ge) (2.3…”
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A multi-band high performance single-chip transceiver for WCDMA/HSDPA by Chiu, C.S., Heng, B.S., Khoo, E.S., Karri, S.R., Kuo, B.J., Shen, C.H., Sin, T.Y., Wang, C.Y., Yang, W., Zhang, H.L., Ali-Ahmad, W.Y., Heng, C.L., Dehng, G.K.

“…A multi-band (bands I, II, V, VIII [option]) single-chip RFIC has been implemented in 0.18 mum SiGe BiCMOS process for WCDMA/HSDPA applications. The…”
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Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO2/pure Ge/rapid thermal oxide memory structure by HENG, C. L, TEO, L. W, HO, Vincent, TAY, M. S, LEI, Y, CHOI, W. K, CHIM, W. K

“…A metal-insulator-semiconductor device with a trilayer structure consisting of sputtered silicon dioxide (SiO2) (#~50 nm)-evaporated pure germanium (Ge) (2.3…”
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Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO 2 films by You, Li-ping, Heng, C.L, Ma, S.Y, Ma, Z.C, Zong, W.H, Wu, Zheng-long, Qin, G.G

“…Si-rich SiO 2 films with three different degrees of Si-richness were deposited by RF magnetron sputtering using Si–SiO 2 composite targets. X-ray photoelectron…”
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Electrical characterization of a trilayer germanium nanocrystal memory device by Ho, Vincent, Tay, M.S., Moey, C.H., Teo, L.W., Choi, W.K., Chim, W.K., Heng, C.L., Lei, Y.

“…In this paper, we report the effects of the thickness of the middle layer and the rapid thermal oxide (RTO) layer on the charge storage capability of the…”
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Precipitation and crystallization of nanometer Si clusters in annealed Si-rich SiO2 films by YOU, L.-P, HENG, C. L, MA, S. Y, MA, Z. C, ZONG, W. H, WU, Z.-L, QIN, G. G

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Influences of thicknesses of SiO 2 layers on electroluminescence from amorphous Si/SiO 2 superlattices by Heng, C.L, Zhang, B.R, Qiao, Y.P, Ma, Z.C, Zong, W.H, Qin, G.G

“…Amorphous Si/SiO 2 superlattices, with four periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of Si…”
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