Search Results - "Henderson, T.S."

Observation of resonant tunneling at room temperature in GaInP/GaAs/GaInP double-heterojunction bipolar transistor by Liu, W., Seabaugh, A.C., Henderson, T.S., Yuksel, A., Beam, E.A., Fan, S.

“…Negative differential resistance (NDR) has been observed at room temperature in GaInP/GaAs double-heterojunction bipolar transistors (DHBTs). Both the…”
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On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures by Fischer, R., Drummond, T.J., Klem, J., Kopp, W., Henderson, T.S., Perrachione, D., Morkoc, H.

“…The collapse of the drain current-voltage characteristics of modulation-doped field-effect transistors (MODFET's) at cryogenic temperatures, previously thought…”
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Determination of carrier saturation velocity in high-performance InyGa1-yAs/AlxGa1-xAs modulation-doped field-effect transistors (0 ≤ y ≤ 0.2) by Henderson, T.S., Masselink, W.T., Kopp, W., Morkoc, H.

“…We describe a new method for determining the carrier saturation velocity υ sat in modulation-doped field-effect transistors (MODFET's). High-performance…”
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Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10-2to 108Hz by Liu, S.-M.J., Das, M.B., Chin-Kun Peng, Klem, J., Henderson, T.S., Kopp, W.F., Morkoc, H.

“…Equivalent gate noise voltage spectra of 1-µm gate-length modulation-doped FET's with pseudomorphic InGaAs quantum-well structure have been measured for the…”
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The GaAs heterojunction bipolar transistor: an electron device with optical device reliability by Henderson, T.S.

“…GaAs-based heterojunction bipolar transistors (HBTs) are of interest for a wide variety of applications. However, concerns about the long-term stability of the…”
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The GaAs heterojunction bipolar transistor: an electron device with optical device reliability by Henderson, T.S.

“…GaAs-based heterojunction bipolar transistors (HBTs) are of interest for a wide variety of applications. However, concerns about the long-term stability of the…”
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Determination of carrier saturation velocity in high-performance In y Ga 1-y As/Al x Ga 1-x As modulation-doped field-effect transistors (0 ≤ y ≤ 0.2) by Henderson, T.S., Masselink, W.T., Kopp, W., Morkoc, H.

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Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10 -2 to 10 8 Hz by Liu, S.-M.J., Das, M.B., Chin-Kun Peng, Klem, J., Henderson, T.S., Kopp, W.F., Morkoc, H.

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The dependence of 77 K electron velocity-field characteristics on low-field mobility in AlGaAs-GaAs modulation-doped structures by Masselink, W.T., Henderson, T.S., Klem, J., Kopp, W.F., Morkoc, H.

“…We have used the geometrical magnetoresistance method to measure the electron velocities and mobilities as functions of electric field in AlGaAs-GaAs…”
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An InAlAs/InGaAs heterojunction bipolar transistor clocked latch on InP by Henderson, T.S., Taddiken, A.H., Kao, Y.C.

“…A clocked latch functioning as a simple comparator with InAlAs/InGaAs heterojunction bipolar transistors (HBTs) on an InP substrate is discussed. Typical…”
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Design of enhanced Schottky-barrier AlGaAs/GaAs MODFET's using highly doped p+surface layers by Priddy, K.L., Kitchen, D.R., Grzyb, J.A., Litton, C.W., Henderson, T.S., Chin-Kun Peng, Kopp, W.F., Morkoc, H.

“…The design and performance of enhanced Schottky-barrier height modulation-doped AlGaAs/GaAs field-effect transistors (ESMODFET's) is discussed. Results are…”
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Microwave characterization of (Al,Ga)As/GaAs modulation-doped FET's: Bias dependence of small-signal parameters by Arnold, D.J., Fischer, R., Kopp, W.F., Henderson, T.S., Morkoc, H.

“…Microwave characterization on 1-µm gate (Al, Ga)As/GaAs modulation-doped field-effect transistors (MODFET's) was done using a network analyzer. Equivalent…”
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Improved reliability self-aligned C/X-band monolithic power HBT amplifiers fabricated with a low-stress process by Henderson, T.S., Kim, T.S.

“…We report extensive reliability testing and analysis on GaAs single-finger C/X-band HBTs fabricated for monolithic amplifiers with a low-stress process, The…”
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Reliability of self-aligned, ledge passivated 7.5 GHz GaAs/AlGaAs HBT power amplifiers under RF bias stress at elevated temperatures by Henderson, T.S., Ikalainen, P.K.

“…We report a two-temperature RF bias stress test on nominal 1.2 W 2.5 GHz GaAs/AlGaAs HBT unit cell amplifiers. MTTFs of 2020 and 1340 hours were obtained at…”
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Determination of band offsets in AlGaAs/GaAs and InGaAs/GaAs multiple quantum wells by Ji, G., Huang, D., Reddy, U. K., Unlu, H., Henderson, T. S., Morkoç, H.

“…The determination of valence band offsets Q v by fitting the optical transmission spectra for Al x Ga1−x As/GaAs and In y Ga1−y As/GaAs multiple quantum wells…”
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The Employment Medical Advisory Service by Henderson, R. T., Carter, J. T.

“…The historical development of the Employment Medical Advisory Service is described, and the Service's present organization is related to its range of…”
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Castor bean allergy among workers in the felt industry by Topping, M D, Henderson, R T, Luczynska, C M, Woodmass, A

“…We describe occupational allergy to castor bean in workers in a felt manufacturing plant. Twenty-six (37%) of the workers complained they were affected by the…”
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