Search Results - "Hemmingsson, Carl"

Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor by Pozina, Galia, Hsu, Chih-Wei, Abrikossova, Natalia, Kaliteevski, Mikhail A., Hemmingsson, Carl

“…Gallium oxide is a promising semiconductor with great potential for efficient power electronics due to its ultra-wide band gap and high breakdown electric…”
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Fröhlich resonance splitting in hybrid GaN nanowire-Ag nanoparticle structures by Pozina, Galia, Girshova, Elizaveta I, Abrikossova, Natalia, Hemmingsson, Carl, Lähderanta, Erkki, Kaliteevski, Mikhail

“…Plasmonic nanoparticles (NPs) have attracted significant attention due to their unique optical properties and broad optoelectronic and photonic applications…”
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Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN by Hemmingsson, Carl, Pozina, Galia

“…We have studied growth and self-separation of bulk GaN on c-oriented Al2O3 using low temperature (LT) GaN buffer layers. By studying the X-ray diffraction…”
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Plasma-Assisted Halide Vapor Phase Epitaxy for Low Temperature Growth of III-Nitrides by Pozina, Galia, Hsu, Chih-Wei, Abrikossova, Natalia, Hemmingsson, Carl

“…Developing growth techniques for the manufacture of wide band gap III-nitrides semiconductors is important for the further improvement of optoelectronic…”
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Numerical Modelling for the Experimental Improvement of Growth Uniformity in a Halide Vapor Phase Epitaxy Reactor for Manufacturing β-Ga2O3 Layers by Pozina, Galia, Hsu, Chih-Wei, Abrikossova, Natalia, Hemmingsson, Carl

“…The development of growth processes for the synthesis of high-quality epitaxial layers is one of the requirements for utilizing the ultrawide band gap…”
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Effect of Plasmonic Ag Nanoparticles on Emission Properties of Planar GaN Nanowires by Pozina, Galia, Hemmingsson, Carl, Abrikossova, Natalia, Girshova, Elizaveta I, Lähderanta, Erkki, Kaliteevski, Mikhail A

“…The combination of plasmonic nanoparticles and semiconductor substrates changes the properties of hybrid structures that can be used for various applications…”
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Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy by Duc, Tran Thien, Pozina, Galia, Son, Nguyen Tien, Janzén, Erik, Ohshima, Takeshi, Hemmingsson, Carl

“…Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient…”
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Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC by Gällström, Andreas, Magnusson, Björn, Beyer, Franziska C., Gali, Adam, Son, N.T., Leone, Stefano, Ivanov, Ivan G., Hemmingsson, Carl G., Henry, Anne, Janzén, Erik

“…Several optically observed deep level defects in SiC are still unidentified and little is published on their behavior. One of the commonly observed deep level…”
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Luminescence of Acceptors in Mg-Doped GaN by Monemar, Bo, Khromov, Sergey, Pozina, Galia, Paskov, Plamen, Bergman, Peder, Hemmingsson, Carl, Hultman, Lars, Amano, Hiroshi, Avrutin, Vitaliy, Li, Xing, Morko\{c}, Hadis

“…Recent photoluminescence (PL) data for Mg-doped GaN at 2 K are discussed, with reference to published theoretical calculations of the electronic level…”
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Local Structure of Zn Dopant in β‑Phase Ga2O3 by Yoshioka, Satoru, Yasuda, Kazuhiro, Hsiao, Ching-Lien, Hsu, Chih-Wei, Olovsson, Weine, Birch, Jens, Hemmingsson, Carl, Pozina, Galia

“…Ga2O3 is a promising ultrawide-bandgap semiconductor for high-voltage and high-power applications, yet achieving reliable p-type electrical conductivity…”
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Local Structure of Zn Dopant in β-Phase Ga 2 O 3 by Yoshioka, Satoru, Yasuda, Kazuhiro, Hsiao, Ching-Lien, Hsu, Chih-Wei, Olovsson, Weine, Birch, Jens, Hemmingsson, Carl, Pozina, Galia

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Doping of β‐Ga 2 O 3 Layers by Zn Using Halide Vapor‐Phase Epitaxy Process by Pozina, Galia, Hsu, Chih-Wei, Abrikossova, Natalia, Hemmingsson, Carl

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Local Structure of Zn Dopant in ß-Phase Ga 2 O 3 by Yoshioka, Satoru, Yasuda, Kazuhiro, Hsiao, Ching-Lien, Hsu, Chih-Wei, Olovsson, Weine, Birch, Jens, Hemmingsson, Carl, Pozina, Galia

“…Ga2O3 is a promising ultrawide-bandgap semiconductor for high-voltage and high-power applications, yet achieving reliable p-type electrical conductivity…”
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Doping of β‐Ga2O3 Layers by Zn Using Halide Vapor‐Phase Epitaxy Process by Pozina, Galia, Hsu, Chih-Wei, Abrikossova, Natalia, Hemmingsson, Carl

“…Development of ultrawide bandgap semiconductor β‐Ga2O3 is important considering its great potential for high‐power high‐voltage electronic applications. Halide…”
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Optical properties of AlGaN/GaN epitaxial layers grown on different face GaN substrates by Li, Xun, Hemmingsson, Carl, Forsberg, Urban, Janzén, Erik, Pozina, Galia

“…•The AlGaN/GaN epilayers were grown on both Ga-face and N-face GaN substrates.•TRPL technique was used to compare the optical properties of the samples.•A…”
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Numerical Modelling for the Experimental Improvement of Growth Uniformity in a Halide Vapor Phase Epitaxy Reactor for Manufacturing β-Ga[sub.2]O[sub.3] Layers by Pozina, Galia, Hsu, Chih-Wei, Abrikossova, Natalia, Hemmingsson, Carl

“…The development of growth processes for the synthesis of high-quality epitaxial layers is one of the requirements for utilizing the ultrawide band gap…”
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Emission properties of Ga2O3 nano-flakes: effect of excitation density by Pozina, G., Forsberg, M., Kaliteevski, M. A., Hemmingsson, C.

“…In the quest of developing high performance electronic and optical devices and more cost effective fabrication processes of monoclinic β-Ga 2 O 3 , new growth…”
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Dynamic properties of excitons in ZnO/AlGaN/GaN hybrid nanostructures by Forsberg, Mathias, Hemmingsson, Carl, Amano, Hiroshi, Pozina, Galia

“…Hybrid samples based on ZnO colloidal nanocrystals (NCs) deposited on AlGaN/GaN quantum well (QW) structures with different top barrier thickness d = 3, 6 and…”
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Emission Properties of GaN Planar Hexagonal Microcavities by Pozina, Galia, Hemmingsson, Carl, Belonovskii, Alexei V., Levitskii, Iaroslav V., Mitrofanov, Maxim I., Girshova, Elizaveta I., Ivanov, Konstantin A., Rodin, Sergey N., Morozov, Konstantin M., Evtikhiev, Vadim P., Kaliteevski, Mikhail A.

“…Fabrication of microcavities based on III‐nitrides is challenging due to difficulties with the coherent growth of heterostructures having a large number of…”
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Emission Properties of GaN Planar Hexagonal Microcavities by Pozina, Galia, Hemmingsson, Carl, Belonovskii, Alexei V., Levitskii, Iaroslav V., Mitrofanov, Maxim I., Girshova, Elizaveta I., Ivanov, Konstantin A., Rodin, Sergey N., Morozov, Konstantin M., Evtikhiev, Vadim P., Kaliteevski, Mikhail A.

“…Planar Hexagonal Microcavities GaN planar hexagonal microcavities are fabricated using a selective area metal‐organic vapor phase epitaxy. The almost ideal…”
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