Search Results - "Hekmatshoar, Bahman"

Electrical Stability and Flicker Noise of Thin-Film Heterojunction FETs on Poly-Si Substrates by Hekmatshoar, Bahman

“…Electrical stability and flicker (1/f) noise of thin-film heterojunction field-effect transistors (HJFETs) comprised of hydrogenated amorphous Si (a-Si:H) gate…”
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Kerf-Less Removal of Si, Ge, and III-V Layers by Controlled Spalling to Enable Low-Cost PV Technologies by Bedell, S. W., Shahrjerdi, D., Hekmatshoar, B., Fogel, K., Lauro, P. A., Ott, J. A., Sosa, N., Sadana, D.

“…Kerf-less removal of surface layers of photovoltaic materials including silicon, germanium, and III-Vs is demonstrated by controlled spalling technology. The…”
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High-efficiency heterojunction solar cells on crystalline germanium substrates by Hekmatshoar, Bahman, Shahrjerdi, Davood, Hopstaken, Marinus, Fogel, Keith, Sadana, Devendra K.

“…We report stand-alone heterojunction (HJ) solar cells with conversion efficiencies of 5.9% and 7.2% on n-type and p-type crystalline germanium (c-Ge)…”
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Highly stable amorphous-silicon thin-film transistors on clear plastic by Hekmatshoar, Bahman, Cherenack, Kunigunde H., Kattamis, Alex Z., Long, Ke, Wagner, Sigurd, Sturm, James C.

“…Hydrogenated amorphous-silicon ( a - Si : H ) thin-film transistors (TFTs) have been fabricated on clear plastic with highly stable threshold voltages. When…”
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Tradeoff regimes of lifetime in amorphous silicon thin-film transistors and a universal lifetime comparison framework by Hekmatshoar, Bahman, Wagner, Sigurd, Sturm, James C.

“…We report that the dependence of the lifetime of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) versus channel sheet resistance (Rsheet)…”
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A Low-Power Thin-Film Si Heterojunction FET Noise Amplifier for Generation of True Random Numbers by Hekmatshoar, Bahman, Shahidi, Ghavam G.

“…A low-power noise amplifier is implemented with thin-film Si heterojunction field-effect transistors (HJFETs) and its suitability for generation of true random…”
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Thin-Film Heterojunction FETs on Poly-Si Substrates for High-Stability Driving and Low-Power Amplification by Hekmatshoar, Bahman

“…Thin-film heterojunction field-effect transistor (HJFET) devices with hydrogenated amorphous Si gate and hydrogenated poly-Si source and drain regions are…”
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Thin-Film Silicon Heterojunction FETs for Large Area and Flexible Electronics: Design Parameters and Reliability by Hekmatshoar, Bahman

“…The design parameters and reliability of thin-film heterojunction FET (HJFET) devices comprised of hydrogenated amorphous Si (a-Si:H) gate-stacks on…”
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Thin-film tunneling transistors on flexible plastic substrates based on stress-assisted lateral growth of polycrystalline germanium by Hekmatshoar, Bahman, Mohajerzadeh, Shams, Shahrjerdi, Davood, Robertson, Michael D.

“…Stress-assisted Cu-induced lateral growth of polycrystalline germanium (poly-Ge) at temperatures as low as 150 °C has been exploited to fabricate thin-film…”
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Thin-Film Heterojunction Field-Effect Transistors With Crystalline Si Channels and Low-Temperature PECVD Contacts by Hekmatshoar, Bahman

“…Heterojunction field-effect transistor devices with thin-film crystalline silicon channels and gate, source, and drain contacts formed by plasma-enhanced…”
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Normally-Off Thin-Film Silicon Heterojunction Field-Effect Transistors and Application to Complementary Circuits by Hekmatshoar, Bahman

“…A thin blocking structure is incorporated in the gate-stack of heterojunction field-effect transistor (HJFET) devices to substantially suppress the gate…”
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Amorphous-Silicon Thin-Film Transistors Fabricated at 300 ^\hbox on a Free-Standing Foil Substrate of Clear Plastic by Cherenack, K.H., Kattamis, A.Z., Hekmatshoar, B., Sturm, J.C., Wagner, S.

“…We have made hydrogenated amorphous-silicon thin-film transistors (TFTs) at a process temperature of 300 deg C on free-standing clear-plastic foil substrates…”
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Low-temperature non-metal-induced crystallization of germanium for fabrication of thin-film transistors by Hekmatshoar, Bahman, Khajooeizadeh, Arash, Mohajerzadeh, Shams, Shahrjerdi, Davood, Asl-Soleimani, Ebrahim

“…Device-quality poly-Ge layers were grown at temperatures as low as 200 °C by successive hydrogenation and annealing steps, with no need to any metal…”
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Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells by Hekmatshoar, Bahman, Shahrjerdi, Davood, Hopstaken, Marinus, Ott, John A., Sadana, Devendra K.

“…We report silicon heterojunction solar cells with conversion efficiencies exceeding 21% using appropriately designed emitter structures comprised of highly…”
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Tradeoff regimes of lifetime in amorphous silicon thin-film transistorsand a universal lifetime comparison framework by Hekmatshoar, Bahman, Wagner, Sigurd, Sturm, James C.

“…We report that the dependence of the lifetime of hydrogenated amorphous silicon ( a -Si:H) thin-film transistors (TFTs) versus channel sheet resistance ( R…”
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Application of thin epitaxial hydrogenated si layers to high efficiency heterojunction solar cells on N-type si substrates by Hekmatshoar, Bahman, Shahrjerdi, Davood, Sadana, Devendra K.

“…We show that a thin (<;20nm) stack comprised of n + doped hydrogenated crystalline silicon (c-Si:H) and n + doped hydrogenated amorphous silicon (a-Si:H) can…”
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Amorphous-silicon thin-film transistors fabricated at 300 °C on a free-standing foil substrate of clear plastic by CHERENACK, Kunigunde H, KATTAMIS, Alex Z, HEKMATSHOAR, Bahman, STURM, James C, WAGNER, Sigurd

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Static active-matrix OLED display without pixel refresh enabled by amorphous-silicon non-volatile memory by Huang, Yifei, Hekmatshoar, Bahman, Wagner, Sigurd, Sturm, James C.

“…— An active‐matrix organic light‐emitting‐diode (AMOLED) display which does not require pixel refresh is demonstrated. This was achieved by replacing the…”
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Low-Temperature a-Si:H/GaAs Heterojunction Solar Cells by Shahrjerdi, D., Hekmatshoar, B., Sadana, D. K.

“…We propose a novel hydrogenated amorphous silicon (a-Si:H)/GaAs heterostructure for photovoltaic solar cells. The structure has two key advantages: 1)…”
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Silicon heterojunction thin-film transistors for active-matrix flat-panel and flexible displays by Hekmatshoar, Bahman

“…The prospect of thin-film heterojunction field-effect transistors comprised of hydrogenated amorphous Si gate contacts on crystalline Si substrates for…”
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