Search Results - "Hekmatshoar, B"

High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology by Shahrjerdi, D., Bedell, S. W., Ebert, C., Bayram, C., Hekmatshoar, B., Fogel, K., Lauro, P., Gaynes, M., Gokmen, T., Ott, J. A., Sadana, D. K.

“…In this letter, we demonstrate the effectiveness of the controlled spalling technology for producing high-efficiency (28.7%) thin-film InGaP/(In)GaAs/Ge tandem…”
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Low-Temperature Epitaxy of Compressively Strained Silicon Directly on Silicon Substrates by Shahrjerdi, D., Hekmatshoar, B., Bedell, S. W., Hopstaken, M., Sadana, D. K.

“…We report epitaxial growth of compressively strained silicon directly on (100) silicon substrates by plasma-enhanced chemical vapor deposition. The silicon…”
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Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 °C by CHERENACK, K. H, HEKMATSHOAR, B, STURM, James C, WAGNER, Sigurd

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Reliability of Active-Matrix Organic Light-Emitting-Diode Arrays With Amorphous Silicon Thin-Film Transistor Backplanes on Clear Plastic by Hekmatshoar, B., Kattamis, A.Z., Cherenack, K.H., Ke Long, Jian-Zhang Chen, Wagner, S., Sturm, J.C., Rajan, K., Hack, M.

“…We have fabricated active-matrix organic light emitting diode (AMOLED) test arrays on an optically clear high-temperature flexible plastic substrate at process…”
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Top-Gate Amorphous Silicon TFT With Self-Aligned Silicide Source/Drain and High Mobility by Yifei Huang, Hekmatshoar, B., Wagner, S., Sturm, J.C.

“…We report a process for top-gate amorphous silicon thin-film transistors (alpha-Si TFTs) that employs a self-aligned metal silicide for source and drain (S/D)…”
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High mobility poly-Ge thin-film transistors fabricated on flexible plastic substrates at temperatures below 130°C by SHAHRJERDI, D, HEKMATSHOAR, B, MOHAJERZADEH, S. S, KHAKIFIROOZ, A, ROBERTSON, M

“…Depletion-mode poly-Ge thin-film transistors (TFTs) with an effective hole mobility of 110 cm2/Vs and an ON/OFF ratio of 104 have been fabricated on flexible…”
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Low temperature crystallization of germanium on plastic by externally applied compressive stress by Hekmatshoar, B., Shahrjerdi, D., Mohajerzadeh, S., Khakifirooz, A., Goodarzi, A., Robertson, M.

“…The conventional Cu-induced crystallization of a-Ge has been facilitated by different types of external stress mechanically applied to the flexible substrate…”
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Low temperature stress-induced crystallization of germanium on plastic by Shahrjerdi, D., Hekmatshoar, B., Rezaee, L., Mohajerzadeh, S.S.

“…Crystallization of a-Ge was performed on flexible plastic substrates at temperatures as low as 130 °C. Copper has been primarily used as the seed of…”
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Low-temperature stress-assisted germanium-induced crystallization of silicon–germanium alloys on flexible polyethylene terephtalate substrates by Hekmatshoar, B., Shahrjerdi, D., Mohajerzadeh, S., Khakifirooz, A., Robertson, M., Tonita, A., Bennett, J. C.

“…The application of mechanical-compressive stress during low-temperature annealing has been investigated for the crystallization of SiGe alloys on plastic…”
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Fabrication of poly-Ge-based thermopiles on plastic by Makki, B.S., Moradi, M., Moafi, A., Mohajerzadeh, S., Hekmatshoar, B., Shahrjerdi, D.

“…Fabrication of Ge-based thermocouple on polyethylene-terephthalate (PET) plastic substrates is reported. The amorphous Ge film, deposited using electron beam…”
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Amorphous Silicon Thin-Film Transistor Backplanes Deposited at 200 ^} on Clear Plastic for Lamination to Electrophoretic Displays by Kattamis, A.Z., Cheng, I.-C., Ke Long, Hekmatshoar, B., Cherenack, K.H., Wagner, S., Sturm, J.C., Venugopal, S.M., Loy, D.E., O'Rourke, S.M., Allee, D.R.

“…The transition of thin-film transistor (TFT) backplanes from rigid plate glass to flexible substrates requires the development of a generic TFT backplane…”
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AMOLED Reliability with a-Si TFT's in Normal vs. Inverted TFT/OLED Integration Scheme by Hekmatshoar, B., Cherenack, K., Ke Long, Kattamis, A., Wagner, S., Sturm, J.C.

“…An important technical issue associated with using a-Si for AMOLED displays is the direct voltage programming of the pixel by providing a constant current…”
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Kerf-Less Removal of Si, Ge, and III-V Layers by Controlled Spalling to Enable Low-Cost PV Technologies by Bedell, S. W., Shahrjerdi, D., Hekmatshoar, B., Fogel, K., Lauro, P. A., Ott, J. A., Sosa, N., Sadana, D.

“…Kerf-less removal of surface layers of photovoltaic materials including silicon, germanium, and III-Vs is demonstrated by controlled spalling technology. The…”
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Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of germanium by Hekmatshoar, B., Mohajerzadeh, S., Shahrjerdi, D., Robertson, M.D.

“…Tunneling and depletion-mode poly-Ge TFTs were fabricated at temperatures as low as 150/spl deg/C and 200/spl deg/C respectively. Fabrication of the tunneling…”
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Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric by Shahrjerdi, D., Nah, J., Hekmatshoar, B., Akyol, T., Ramon, M., Tutuc, E., Banerjee, S. K.

“…We report the direct measurement of the inversion charge density and electron mobility in enhancement-mode n-channel GaAs transistors using gated Hall bars…”
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Amorphous-silicon thin-film transistors fabricated at 300 °C on a free-standing foil substrate of clear plastic by CHERENACK, Kunigunde H, KATTAMIS, Alex Z, HEKMATSHOAR, Bahman, STURM, James C, WAGNER, Sigurd

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Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 ^\hbox by Cherenack, K H, Hekmatshoar, B, Sturm, James C, Wagner, Sigurd

“…We fabricated back-channel-cut and back-channel-passivated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) on clear-plastic (CP) foil…”
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Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 [Formula Omitted] by Cherenack, K. H, Hekmatshoar, B, Sturm, James C, Wagner, Sigurd

“…We fabricated back-channel-cut and back-channelpassivated hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) on clear-plastic (CP) foil…”
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Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al 2 O 3 gate dielectric by Shahrjerdi, D., Nah, J., Hekmatshoar, B., Akyol, T., Ramon, M., Tutuc, E., Banerjee, S. K.

“…We report the direct measurement of the inversion charge density and electron mobility in enhancement-mode n-channel GaAs transistors using gated Hall bars…”
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Amorphous silicon: The other silicon by Sturm, J C, Huang, Y, Han, L, Liu, T, Hekmatshoar, B, Cherenack, K, Lausecker, E, Wagner, S

“…While crystalline silicon FET's are the key enablers for the integrated circuit field, amorphous silicon thin film transistors are the key semiconductor of the…”
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