Search Results - "Heinrichsdorff, F"

Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition by Heinrichsdorff, F., Mao, M.-H., Kirstaedter, N., Krost, A., Bimberg, D., Kosogov, A. O., Werner, P.

“…We report on quantum dot (QD) lasers made of stacked InAs dots grown by metalorganic chemical vapor deposition. Successful growth of defect-free binary…”
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Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers by Borri, P., Langbein, W., Hvam, J.M., Heinrichsdorff, F., Mao, M.-H., Bimberg, D.

“…The ultrafast dynamics of gain and refractive index in an electrically pumped InAs-InGaAs quantum-dot (QD) optical amplifier are measured at room temperature…”
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Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers by Borri, P., Langbein, W., Hvam, J.M., Heinrichsdorff, F., Mao, M.-H., Bimberg, D.

“…The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution…”
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High-power quantum-dot lasers at 1100 nm by Heinrichsdorff, F., Ribbat, Ch, Grundmann, M., Bimberg, D.

“…High-power semiconductor laser diodes based on multiple InGaAs/GaAs quantum-dot layers grown by metal–organic chemical-vapor deposition are demonstrated. The…”
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Quantum dot lasers: breakthrough in optoelectronics by Bimberg, D., Grundmann, M., Heinrichsdorff, F., Ledentsov, N.N., Ustinov, V.M., Zhukov, A.E., Kovsh, A.R., Maximov, M.V., Shernyakov, Y.M., Volovik, B.V., Tsatsul’nikov, A.F., Kop’ev, P.S., Alferov, Zh.I.

“…Semiconductor heterostructures with self-organized quantum dots (QDs) have experimentally exhibited properties expected for zero-dimensional systems. When used…”
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Radiative recombination in type-II GaSb/GaAs quantum dots by Hatami, F., Ledentsov, N. N., Grundmann, M., Böhrer, J., Heinrichsdorff, F., Beer, M., Bimberg, D., Ruvimov, S. S., Werner, P., Gösele, U., Heydenreich, J., Richter, U., Ivanov, S. V., Meltser, B. Ya, Kop’ev, P. S., Alferov, Zh. I.

“…Strained GaSb quantum dots having a staggered band lineup (type II) are formed in a GaAs matrix using molecular beam epitaxy. The dots are growing in a…”
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Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots by Eisele, H., Flebbe, O., Kalka, T., Preinesberger, C., Heinrichsdorff, F., Krost, A., Bimberg, D., Dähne-Prietsch, M.

“…We present cross-sectional scanning-tunneling microscopy results of threefold stacked InAs quantum dots prepared by metal-organic chemical-vapor deposition at…”
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Quantum-dot heterostructure lasers by Ledentsov, N.N., Grundmann, M., Heinrichsdorff, F., Bimberg, D., Ustinov, V.M., Zhukov, A.E., Maximov, M.V., Alferov, Zh.I., Lott, J.A.

“…Quantum-dot (QD) heterostructures are nanoscale coherent insertions of narrow-gap material in a single-crystalline matrix. These tiny structures provide unique…”
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Influence of In/Ga intermixing on the optical properties of InGaAs/GaAs quantum dots by Heinrichsdorff, F., Grundmann, M., Stier, O., Krost, A., Bimberg, D.

“…We report on the impact of thermal annealing of buried InGaAs quantum dots (QDs) on the eigenstate energies and their inhomogeneous broadening due to size…”
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Self-organization processes of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition by Heinrichsdorff, F., Krost, A., Grundmann, M., Bimberg, D., Kosogov, A., Werner, P.

“…In0.5Ga0.5As/GaAs (001) quantum dots (QDs) were grown by metalorganic chemical vapor deposition (MOCVD) on exactly (001) oriented substrates using the…”
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Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection by Borri, P., Langbein, W., Hvam, J. M., Heinrichsdorff, F., Mao, M.-H., Bimberg, D.

“…Time-resolved four-wave mixing in an InAs/InGaAs/GaAs electrically pumped quantum-dot amplifier is measured at room temperature for different applied bias…”
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Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition by Flebbe, O., Eisele, H., Kalka, T., Heinrichsdorff, F., Krost, A., Bimberg, D., Dähne-Prietsch, M.

“…We present a detailed cross-sectional scanning-tunneling microscopy investigation of threefold stacked InAs quantum dots in a GaAs matrix grown by…”
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A compact digitally tunable seven-channel ring laser by den Besten, J.H., Broeke, R.G., van Geemert, M., Binsma, J.J.M., Heinrichsdorff, F., van Dongen, T., de Vries, T., Bente, E.A.J.M., Leijtens, X.J.M., Smit, M.K.

“…A seven-channel ring laser was realized by monolithic integration of a compact 4/spl times/4 PHASAR (de)multiplexer with four amplifiers in InP. The PHASAR was…”
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Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction by Darhuber, A. A., Holy, V., Stangl, J., Bauer, G., Krost, A., Heinrichsdorff, F., Grundmann, M., Bimberg, D., Ustinov, V. M., Kop’ev, P. S., Kosogov, A. O., Werner, P.

“…We have studied multiple layers of self-organized InGaAs-islands grown on GaAs by x-ray diffraction reciprocal space mapping. We found an anisotropy of the dot…”
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High-resolution x-ray diffraction of self-organized InGaAs/GaAs quantum dot structures by Krost, A., Heinrichsdorff, F., Bimberg, D., Darhuber, A., Bauer, G.

“…The structural properties of highly strained buried InxGa1−xAs layers on GaAs substrates are investigated by high-resolution x-ray diffraction. Such layers of…”
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An integrated 4×4-channel multiwavelength laser on InP by Besten, J.H den, Broeke, R.G, Geemert, M van, Binsma, J.J.M, Heinrichsdorff, F, Dongen, T van, Bente, E.A.J.M, Leijtens, X.J.M, Smit, M.K

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Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Structures by Sobolev, N.A., Cavaco, A., Carmo, M.C., Grundmann, M., Heinrichsdorff, F., Bimberg, D.

“…The quenching of photoluminescence in InAs/GaAs quantum dots and quantum wells by 2 MeV electron irradiation is investigated. We demonstrate a much higher…”
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In enrichment in (In,Ga)As/GaAs quantum dots studied by high-resolution x-ray diffraction and pole figure analysis by Krost, A., Bläsing, J., Heinrichsdorff, F., Bimberg, D.

“…We report on an x-ray study of a 15×(InAs/InGaAs/GaAs) multiquantum dot stack grown by metal organic chemical vapor deposition using high-resolution x-ray…”
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Optical Properties of Self-Organized Quantum Dots: Modeling and Experiments by Grundmann, M., Stier, O., Bognár, S., Ribbat, C., Heinrichsdorff, F., Bimberg, D.

“…The optical and electronic properties of self‐organized quantum dots (QDs) are of decisive importance for the performance of laser diodes with such QDs as the…”
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Surface flattening during MOCVD of thin GaAs layers covering InGaAs quantum dots by Sellin, R, Heinrichsdorff, F, Ribbat, Ch, Grundmann, M, Pohl, U.W, Bimberg, D

“…Methods to re-establish a flat growth front on top of the corrugated surface of InGaAs quantum dots (QDs) during MOCVD are reported. Overgrowth temperatures at…”
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