Search Results - "Heineck, L."

Mycoplasma hyopneumoniae type I signal peptidase: Expression and evaluation of its diagnostic potential by Moitinho-Silva, Lucas, Heineck, Bianca L., Reolon, Luciano A., Paes, Jéssica A., Klein, Cátia S., Rebelatto, Raquel, Schrank, Irene S., Zaha, Arnaldo, Ferreira, Henrique B.

“…Type I signal peptidase (SPase I) is a membrane-anchored protease of the general secretory pathway, which is encoded by the sipS gene in Mycoplasma…”
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Antimicrobial photodynamic therapy combined with periodontal treatment for metabolic control in patients with type 2 diabetes mellitus: study protocol for a randomized controlled trial by Evangelista, Erika Elisabeth, França, Cristiane Miranda, Veni, Priscila, de Oliveira Silva, Tamires, Gonçalves, Rafael Moredo, de Carvalho, Verônica Franco, Deana, Alessandro Melo, Fernandes, Kristianne P S, Mesquita-Ferrari, Raquel A, Camacho, Cleber P, Bussadori, Sandra Kalil, Alvarenga, Letícia Heineck, Prates, Renato Araujo

“…The relationship between diabetes mellitus (DM) and periodontal disease is bidirectional. DM is a predisposing and modifying factor of periodontitis, which, in…”
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A highly manufacturable deep trench based DRAM cell layout with a planar array device in a 70nm technology by Amon, J., Kieslich, A., Heineck, L., Schuster, T., Faul, J., Luetzen, J., Fan, C., Huang, C.C., Fischer, B., Enders, G., Kudelka, S., Schroeder, U., Kuesters, K.H., Lange, G., Alsmeier, J.

“…For the first time, a new DRAM cell layout as the key enabler for future DRAM shrink generations based on deep trench (DT) technologies with a planar array…”
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Self-Alignment Techniques to enable 40nm Trench Capacitor DRAM Technologies with 3-D Array Transistor and Single-Sided Strap by Moll, H.P., Hartwich, J., Scholz, A., Temmler, D., Graham, A.P., Slesazek, S., Wedler, G., Heineck, L., Mono, T., Zimmermann, U., Schupke, K., Ludwig, F., Park, I., Tran, T., Muller, W.

“…We report an enabling technology for 40 nm trench DRAM and beyond. The 3-dimensional array transistor is formed self-aligned (SA) to the deep trench (DT)…”
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Scaling of a Low Capacitance Highly Selective Self Aligned Contact Process by Graf, W., Genz, O., Kohler, D., Prenz, H., Schupke, K., Laessig, A., Bartholomaeus, L.

“…A novel self aligned contact integration manufacturing method with oxide spacer is presented. Two main issues of conventional self aligned contacts are solved:…”
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A novel cell arrangement enabling Trench DRAM scaling to 40nm and beyond by Heineck, L., Graf, W., Popp, M., Savignac, D., Moll, H.-P., Tews, R., Temmler, D., Kar, G., Schmid, J., Rouhanian, M., Uhlig, I., Goldbach, M., Landgraf, E., Dreeskornfeld, L., Drubba, M., Lukas, S., Weinmann, D., Roesner, W., Mueller, W.

“…We present for the first time the full integration scheme and 512 Mb product data for a trench DRAM technology targeting the 48 nm node. The key technology…”
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