Search Results - "Heimlich, Michael C."

Impact of Bias and Device Structure on Gate Junction Temperature in AlGaN/GaN-on-Si HEMTs by Schwitter, Bryan K., Parker, Anthony E., Mahon, Simon J., Fattorini, Anthony P., Heimlich, Michael C.

“…The thermal impact of device bias-state and structures (such as source connected field plates, gate-pitch, back-vias, and number of gate fingers) in…”
Get full text

Study of Gate Junction Temperature in GaAs pHEMTs Using Gate Metal Resistance Thermometry by Schwitter, Bryan K., Parker, Anthony E., Fattorini, Anthony P., Mahon, Simon J., Heimlich, Michael C.

“…Gate junction temperature is presented as the crucial parameter for modeling thermal degradation in GaAs device reliability studies, and sufficient for…”
Get full text

A Wideband Analog-Controlled Variable-Gain Amplifier With dB-Linear Characteristic for High-Frequency Applications by Hang Liu, Chirn Chye Boon, Xiaofeng He, Xi Zhu, Xiang Yi, Lingshan Kong, Heimlich, Michael C.

“…A higher frequency, over 2 GHz, is suggested for current 4G or 5G wideband applications. By adopting a unique gain control method, an analog-controlled…”
Get full text

An Edge-Coupled Marchand Balun With Partial Ground for Excellent Balance in 0.13 μm SiGe Technology by Chakraborty, Sudipta, Milner, Leigh E., Zhu, Xi, Sevimli, Oya, Parker, Anthony E., Heimlich, Michael C.

“…An edge-coupled meandered three-coupled-line Marchand balun with a partial ground plane implemented in 0.13 μm SiGe Bi-CMOS technology is presented in this…”
Get full text

Eddy Current-Tunneling Magneto-Resistive Sensor for Micromotion Detection of a Tibial Orthopaedic Implant by Khokle, Rajas P., Franco, Fernando, de Freitas, Susana Cardoso, Esselle, Karu P., Heimlich, Michael C., Bokor, Desmond J.

“…In this paper, an eddy current loop coupled with the tunneling magneto resistor (EC-TMR) is used as a displacement sensor to detect the micromotion of an…”
Get full text

A K -Band Frequency Doubler With 35-dB Fundamental Rejection Based on Novel Transformer Balun in 0.13- \mu \text SiGe Technology by Chakraborty, Sudipta, Milner, Leigh E., Xi Zhu, Hall, Leonard T., Sevimli, Oya, Heimlich, Michael C.

“…A compact balanced frequency doubler with more than 35 dB odd-harmonic rejection and fractional bandwidth of 73% is presented in this letter. Wide bandwidth…”
Get full text

Microwave Characterization of Carbon Nanotube Yarns For UWB Medical Wireless Body Area Networks by Abbas, Syed Muzahir, Sevimli, Oya, Heimlich, Michael C., Esselle, Karu P., Kimiaghalam, B., Foroughi, Javad, Safaei, Farzad

“…Carbon nanotube (CNT) yarns are novel CNT-based materials that extend the advantages of CNT from the nanoscale to macroscale applications. In this study, we…”
Get full text

Soldered hot-via E-band and W-band power amplifier MMICs for millimeter-wave chip scale packaging by Bessemoulin, Alexandre, Rodriguez, Melissa C., Mahon, Simon J., Parker, Anthony E., Heimlich, Michael C.

“…Novel and realistic application of hot-via interconnects to millimeter-wave active and power MMICs is demonstrated for the first time. Power amplifier MMICs in…”
Get full text

Transient gate resistance thermometry demonstrated on GaAs and GaN FET by Schwitter, Bryan K., Parker, Anthony E., Mahon, Simon J., Heimlich, Michael C.

“…The development of transient gate resistance thermometry (T-GRT) is reported. It is a technique used to measure the transient self-heating of a FET's gate…”
Get full text

Field-Plate Mixer by Mahon, Simon J., Heimlich, Michael C.

“…A novel GaN FET field-plate mixer is presented. The local oscillator (LO) is connected to the FET's field-plate which is disconnected from the transistor…”
Get full text

Load-pull Measurement Technique for 94 GHz GaAs Amplifiers based on Discrete Sampling with Compact Gamma Matching Networks by Milner, Leigh E., Heimlich, Michael C.

“…This paper presents a load-pull technique where a limited range of matching networks are synthesised on-chip to sample discrete points on the complex impedance…”
Get full text

W-Band Coplanar Medium Power Amplifier by Mahon, Simon J., Sjoberg, Daniel, Hansryd, Jonas, Heimlich, Michael C.

“…Two compact coplanar 90-112 GHz amplifier MMICs are presented. The measured gain for both designs exceeds 22 dB at 100 GHz with output powers of 14.6 and 15.7…”
Get full text

Transient Field-Plate Thermometry Demonstrated on a 20-W X-Band GaN Power Amplifier by Mahon, Simon J., Gorman, Melissa C., Heimlich, Michael C.

“…Transient field-plate thermometry is demonstrated experimentally on a 20-W X-band GaN power. The technique is similar to gate-resistance thermometry but more…”
Get full text

X-Band GaN Stacked-FET Power Amplifier by Niven, David J., Mahon, Simon J., Heimlich, Michael C.

“…A MMIC power amplifier is developed on a GaN process using stacked-FET technology. The amplifier delivers 20 W of output power and 25% power added efficiency…”
Get full text

X-Band GaAs Stacked-FET Amplifier by Niven, David J., Mahon, Simon J., Heimlich, Michael C.

“…A MMIC power amplifier is developed on a GaAs process using stacked-FET technology. The amplifier delivers 2 W output power and greater than 20% power added…”
Get full text

A 15-Watt Ka-band power amplifier in 0.15 µm Gallium Nitride process by Chakraborty, Sudipta, Milner, Leigh E., Mahon, Simon J., Wu, Benny, Heimlich, Michael C.

“…A two-stage, balanced Ka-band power amplifier MMIC implemented in a gallium nitride process is presented. The MMIC was fabricated using a commercial 0.15 µm…”
Get full text

LNA Design Based on an Extracted Single Gate Finger Model by Mahon, Simon J, Dadello, Anna, Vun, Peter, Tarazi, Jabra, Young, Alan C, Heimlich, Michael C, Harvey, James T, Parker, Anthony E

“…A GaAs low-noise amplifier (LNA) is designed with first-time success using a technique for HEMT modelling which divides the device into intrinsic gate fingers…”
Get full text

Novel Power Combining for a 5-18 GHz, 10-21 W, Non-Uniform Distributed Power Amplifier by Mahon, Simon J., Milner, Leigh E., Shahid, Irfan, Heimlich, Michael C.

“…This paper describes the novel power combining strategy and measured performance of a 5 to 18 GHz non-uniform distributed power amplifier fabricated in a 0.15…”
Get full text

Microstrip GaAs Power Amplifiers for High Capacity 92-114 GHz 5G and 6G Backhaul by Mahon, Simon J., Mihaljevic, Jakov, Chakraborty, Sudipta, Gorman, Melissa C., Heimlich, Michael C., Li, Yinggang

“…Single-ended and balanced 90-115 GHz microstrip amplifiers have been designed for cost-sensitive 5G and 6G backhaul in a new, commercial 6-inch, 0.1-μm GaAs…”
Get full text

Optimised Hot-Via Transition with 20 dB Return Loss for MMIC Packaging from DC to 110 GHz by Milner, Leigh E., Mehta, Shyam G., Hall, Leonard T., Mahon, Simon J., Chakraborty, Sudipta, Heimlich, Michael C.

“…A hot-via transition from a monolithic microwave integrated circuit (MMIC) to a printed circuit board (PCB) has been developed with a measured back-to-back…”
Get full text