Search Results - "Heimlich, M."
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Numerical analysis of 2D tunable HIS on GaAs support
Published in Applied physics. A, Materials science & processing (01-06-2011)“…Numerical analysis of the dispersion characteristics of a 2D tunable periodic structure in microstrip technology is presented. The high relative dielectric…”
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The in vitro displacement of adsorbed model antigens from aluminium-containing adjuvants by interstitial proteins
Published in Vaccine (16-07-1999)“…Vaccines prepared by adsorbing an antigen onto an aluminium-containing adjuvant are usually administered by intramuscular or subcutaneous injection. The…”
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Heuristic receiver for implantable UWB applications
Published in Microelectronics (01-06-2014)“…High data rate implantable wireless systems come with many challenges, chief among them being low power operation and high linearity. A low noise amplifier…”
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A broadside-coupled meander-line resonator (BCMLR) for ultra-compact millimeter-wave MMIC designs in 0.13μm SiGe technology
Published in 2016 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM) (05-07-2016)“…This paper proposed a novel broadside-coupled meander-line resonator (BCMLR) for millimeter-wave (mm-wave) passive and active circuit designs. This on-chip…”
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Conference Proceeding -
5
Controlling the beam scanning limits of a microstrip leaky-wave antenna
Published in 2013 IEEE Antennas and Propagation Society International Symposium (APSURSI) (01-07-2013)“…An electronically controlled half-width microstrip leaky-wave antenna (HW-MLWA) that can scan the main beam at a fixed frequency is presented. A technique is…”
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A 4.5 mW 3-5 GHz low-noise amplifier in 0.25-μm silicon-on-insulator CMOS process for power-constraint application
Published in Microwave and optical technology letters (01-01-2013)“…A 1.5 V 4.5 mW 3–5 GHz low‐noise amplifier (LNA) suitable for power‐constraint application is implemented in a 0.25‐μm silicon‐on‐insulator CMOS process.The…”
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Modelling PIN diode switches in reconfigurable leaky-wave antenna design
Published in 2013 IEEE Antennas and Propagation Society International Symposium (APSURSI) (01-07-2013)“…The effect of PIN diodes on the performance of a reconfigurable leaky-wave antenna (LWA) is studied. The PIN diode is modelled in three different ways. It is…”
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Conference Proceeding -
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Metamaterial-Based Millimeter-Wave Switchable Leaky Wave Antennas for On-Chip Implementation in Gaas Technology
Published in Journal of electromagnetic waves and applications (01-01-2011)“…A planar, metamaterial-based, one-dimensional periodic structure that can be switched between multiple states is numerically investigated. It can be fabricated…”
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A 4.5 mW 3-5 GHz low-noise amplifier in 0.25-[mu]m silicon-on-insulator CMOS process for power-constraint application
Published in Microwave and optical technology letters (01-01-2013)“…A 1.5 V 4.5 mW 3-5 GHz low-noise amplifier (LNA) suitable for power-constraint application is implemented in a 0.25-[mu]m silicon-on-insulator CMOS process.The…”
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Attaining higher performance in collective communication
Published in 2004 IEEE International Conference on Cluster Computing (IEEE Cat. No.04EX935) (2004)“…Summary form only given. It has long been thought that research into collective communication algorithms on distributed-memory parallel computers has been…”
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Conference Proceeding -
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Scalable HEMT model for small signal operations
Published in 2010 International Conference on Electromagnetics in Advanced Applications (01-09-2010)“…The aim of this work is to develop a scalable small signal HEMT model. We propose a general intrinsic model "unit cell" to build larger transistor devices…”
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13
Wide-band matching of a tunable periodic structure in GaAs technology
Published in 2011 International Workshop on Antenna Technology (iWAT) (01-03-2011)“…Wide-band matching of a tunable 1D periodic microwave structure, designed for fabrication in GaAs technology, is investigated. The two-layer unit cell of the…”
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A 3-5 GHz LNA in 0.25µm SOI CMOS process for implantable WBANs
Published in 2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS) (01-08-2012)“…A low-voltage, low-power single-ended LNA is implemented in a 0.25 μm SOI CMOS technology. A theoretical basis for the design is used to develop design…”
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Active Switching Devices in a Tunable EBG Structure: Placement Strategies and Modelling
Published in Journal of electromagnetic waves and applications (01-01-2011)“…Different placement strategies for Field-Effect-Transistor (FET) active switching devices in an electromagnetic band gap (EBG) periodic structure are…”
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An OTA-C filter in SOI CMOS for UWB application
Published in 2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS) (01-08-2012)“…A 4 th -order Butterworth OTA-C lowpass filter based on voltage mode multiple loop feedback (MLF) inverse follow the leader feedback (IFLF) structure is…”
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A new microcomputer program for processing data in neutron activation analysis
Published in Journal of radioanalytical and nuclear chemistry (01-03-1993)Get full text
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Gamanal-PC: a program for gamma-ray spectrum analysis using a microcomputer
Published in Journal of radioanalytical and nuclear chemistry (01-08-1989)Get full text
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A folded-switching mixer in SOI CMOS technology
Published in 2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS) (01-08-2012)“…A wideband 3.5 to 5.5GHz low voltage folded-switching mixer is implemented in 0.25um SOI CMOS technology. The post-layout simulation of the designed mixer at…”
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Conference Proceeding -
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Design of low power, wider tuning range CMOS voltage control oscillator for ultra wideband applications
Published in 2012 IEEE International Conference on IC Design & Technology (01-05-2012)“…This paper presents a diode varactor and MOS varactor voltage control oscillators using 0.25μm CMOS technology, proposed for Ultra Wideband application. The…”
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Conference Proceeding