Search Results - "Heimlich, M."

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  1. 1

    Numerical analysis of 2D tunable HIS on GaAs support by Matekovits, L., Heimlich, M., Esselle, K. P.

    “…Numerical analysis of the dispersion characteristics of a 2D tunable periodic structure in microstrip technology is presented. The high relative dielectric…”
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    Journal Article
  2. 2

    The in vitro displacement of adsorbed model antigens from aluminium-containing adjuvants by interstitial proteins by Heimlich, John M, Regnier, Fred E, White, Joe L, Hem, Stanley L

    Published in Vaccine (16-07-1999)
    “…Vaccines prepared by adsorbing an antigen onto an aluminium-containing adjuvant are usually administered by intramuscular or subcutaneous injection. The…”
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    Journal Article
  3. 3

    Heuristic receiver for implantable UWB applications by Iji, Ayobami, Zhu, X., Heimlich, M.

    Published in Microelectronics (01-06-2014)
    “…High data rate implantable wireless systems come with many challenges, chief among them being low power operation and high linearity. A low noise amplifier…”
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    Journal Article
  4. 4

    A broadside-coupled meander-line resonator (BCMLR) for ultra-compact millimeter-wave MMIC designs in 0.13μm SiGe technology by Yang, Y., Zhu, X., Heimlich, M. C.

    “…This paper proposed a novel broadside-coupled meander-line resonator (BCMLR) for millimeter-wave (mm-wave) passive and active circuit designs. This on-chip…”
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    Conference Proceeding
  5. 5

    Controlling the beam scanning limits of a microstrip leaky-wave antenna by Karmokar, D. K., Thalakotuna, D. N. P., Esselle, K. P., Heimlich, M.

    “…An electronically controlled half-width microstrip leaky-wave antenna (HW-MLWA) that can scan the main beam at a fixed frequency is presented. A technique is…”
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    Conference Proceeding
  6. 6

    A 4.5 mW 3-5 GHz low-noise amplifier in 0.25-μm silicon-on-insulator CMOS process for power-constraint application by Iji, A., Zhu, X., Heimlich, M.

    Published in Microwave and optical technology letters (01-01-2013)
    “…A 1.5 V 4.5 mW 3–5 GHz low‐noise amplifier (LNA) suitable for power‐constraint application is implemented in a 0.25‐μm silicon‐on‐insulator CMOS process.The…”
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    Journal Article
  7. 7

    Modelling PIN diode switches in reconfigurable leaky-wave antenna design by Thalakotuna, D. N. P., Karmokar, D. K., Esselle, K. P., Heimlich, M., Matekovits, L.

    “…The effect of PIN diodes on the performance of a reconfigurable leaky-wave antenna (LWA) is studied. The PIN diode is modelled in three different ways. It is…”
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    Conference Proceeding
  8. 8

    Metamaterial-Based Millimeter-Wave Switchable Leaky Wave Antennas for On-Chip Implementation in Gaas Technology by Matekovits, L., Heimlich, M., Esselle, K. P.

    “…A planar, metamaterial-based, one-dimensional periodic structure that can be switched between multiple states is numerically investigated. It can be fabricated…”
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    Journal Article
  9. 9

    A 4.5 mW 3-5 GHz low-noise amplifier in 0.25-[mu]m silicon-on-insulator CMOS process for power-constraint application by Iji, A, Zhu, X, Heimlich, M

    Published in Microwave and optical technology letters (01-01-2013)
    “…A 1.5 V 4.5 mW 3-5 GHz low-noise amplifier (LNA) suitable for power-constraint application is implemented in a 0.25-[mu]m silicon-on-insulator CMOS process.The…”
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    Journal Article
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    Attaining higher performance in collective communication by Chan, E., Heimlich, M., Purkayastha, A., van de Geijn, R.

    “…Summary form only given. It has long been thought that research into collective communication algorithms on distributed-memory parallel computers has been…”
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    Conference Proceeding
  12. 12

    Scalable HEMT model for small signal operations by Hoque, M E, Heimlich, M, Tarazi, Jabra, Parker, Anthony, Mahon, Simon

    “…The aim of this work is to develop a scalable small signal HEMT model. We propose a general intrinsic model "unit cell" to build larger transistor devices…”
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    Conference Proceeding
  13. 13

    Wide-band matching of a tunable periodic structure in GaAs technology by Matekovits, L, Thalakotuna, D N P, Heimlich, M, Esselle, K P

    “…Wide-band matching of a tunable 1D periodic microwave structure, designed for fabrication in GaAs technology, is investigated. The two-layer unit cell of the…”
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    Conference Proceeding
  14. 14

    A 3-5 GHz LNA in 0.25µm SOI CMOS process for implantable WBANs by Iji, A., Xi Zhu, Heimlich, M.

    “…A low-voltage, low-power single-ended LNA is implemented in a 0.25 μm SOI CMOS technology. A theoretical basis for the design is used to develop design…”
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    Conference Proceeding
  15. 15

    Active Switching Devices in a Tunable EBG Structure: Placement Strategies and Modelling by Thalakotuna, D., Matekovits, L., Heimlich, M., Esselle, K. P., Hay, S. G.

    “…Different placement strategies for Field-Effect-Transistor (FET) active switching devices in an electromagnetic band gap (EBG) periodic structure are…”
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    Journal Article
  16. 16

    An OTA-C filter in SOI CMOS for UWB application by Iji, A., Xi Zhu, Heimlich, M., Yichuang Sun

    “…A 4 th -order Butterworth OTA-C lowpass filter based on voltage mode multiple loop feedback (MLF) inverse follow the leader feedback (IFLF) structure is…”
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    Conference Proceeding
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    A folded-switching mixer in SOI CMOS technology by Iji, A., Xi Zhu, Heimlich, M.

    “…A wideband 3.5 to 5.5GHz low voltage folded-switching mixer is implemented in 0.25um SOI CMOS technology. The post-layout simulation of the designed mixer at…”
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    Conference Proceeding
  20. 20

    Design of low power, wider tuning range CMOS voltage control oscillator for ultra wideband applications by Iji, A. B., Zhu, F., Heimlich, M.

    “…This paper presents a diode varactor and MOS varactor voltage control oscillators using 0.25μm CMOS technology, proposed for Ultra Wideband application. The…”
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    Conference Proceeding