Search Results - "Heikman, S."

A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz by Yifeng Wu, Jacob-Mitos, M., Moore, M.L., Heikman, S.

“…A 175-to-350 V hard-switched boost converter was constructed using a high-voltage GaN high-electron-mobility transistor grown on SiC substrate. The high speed…”
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High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates by Huili Xing, Dora, Y., Chini, A., Heikman, S., Keller, S., Mishra, U.K.

“…High-voltage Al/sub 0.22/Ga/sub 0.78/N-GaN high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation…”
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AlGaN/GaN high electron mobility transistors with InGaN back-barriers by Palacios, T., Chakraborty, A., Heikman, S., Keller, S., DenBaars, S.P., Mishra, U.K.

“…A GaN/ultrathin InGaN/GaN heterojunction has been used to provide a back-barrier to the electrons in an AlGaN/GaN high-electron mobility transistor (HEMT). The…”
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AlGaN/AlN/GaN high-power microwave HEMT by Shen, L., Heikman, S., Moran, B., Coffie, R., Zhang, N.-Q., Buttari, D., Smorchkova, I.P., Keller, S., DenBaars, S.P., Mishra, U.K.

“…In this letter, a novel heterojunction AlGaN/AlN/GaN high-electron mobility transistor (HEMT) is discussed. Contrary to normal HEMTs, the insertion of the very…”
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Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs by Chini, A., Buttari, D., Coffie, R., Shen, L., Heikman, S., Chakraborty, A., Keller, S., Mishra, U.K.

“…Record power density and high-efficiency operation with AlGaN-GaN high-electron mobility transistor (HEMT) devices have been achieved by adopting a…”
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Effect of ohmic contacts on buffer leakage of GaN transistors by Dora, Y., Chakraborty, A., Heikman, S., McCarthy, L., Keller, S., DenBaars, S.P., Mishra, U.K.

“…The effect of ohmic contacts on the buffer leakage of GaN transistors is presented. The buffer leakage for AlGaN/GaN high-electron mobility transistors and GaN…”
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High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation by Shen, L., Coffie, R., Buttari, D., Heikman, S., Chakraborty, A., Chini, A., Keller, S., DenBaars, S.P., Mishra, U.K.

“…In this paper, a high-power GaN/AlGaN/GaN high electron mobility transistor (HEMT) has been demonstrated. A thick cap layer has been used to screen surface…”
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A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz by Hongtao Xu, Gao, S., Heikman, S., Long, S.I., Mishra, U.K., York, R.A.

“…A single stage class-E power amplifier in GaN high electron mobility transistor (HEMT) technology is reported. The circuit operates at 1.9 GHz. At 30-V drain…”
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Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs by Palacios, T., Chini, A., Buttari, D., Heikman, S., Chakraborty, A., Keller, S., DenBaars, S.P., Mishra, U.K.

“…Double-channel structures have been used in AlGaN/GaN high electron mobility transistors to reduce the access resistance. Carrier densities as high as 2.9/spl…”
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High breakdown GaN HEMT with overlapping gate structure by Zhang, N.-Q., Keller, S., Parish, G., Heikman, S., DenBaars, S.P., Mishra, U.K.

“…GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a…”
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p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) by Coffie, R., Buttari, D., Heikman, S., Keller, S., Chini, A., Shen, L., Mishra, U.K.

“…A novel p-capped GaN-AlGaN-GaN high-electron mobility transistor has been developed to minimize radio-frequency-to-dc (RF-DC) dispersion before passivation…”
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Growth and characteristics of Fe-doped GaN by Heikman, S., Keller, S., Mates, T., DenBaars, S.P., Mishra, U.K.

“…The Fe doping of GaN by metalorganic chemical vapor deposition was studied. Si–Fe co-doping experiments revealed that the compensation activity of Fe was 34%…”
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Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition by Keller, S., Heikman, S., Ben-Yaacov, I., Shen, L., DenBaars, S. P., Mishra, U. K.

“…AlN/GaN single and multilayer structures with various AlN and GaN layer thicknesses were grown by metalorganic chemical vapor deposition. Step flow growth of…”
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Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers by Smorchkova, I. P., Keller, S., Heikman, S., Elsass, C. R., Heying, B., Fini, P., Speck, J. S., Mishra, U. K.

“…Plasma-assisted molecular-beam epitaxy is used to grow a set of two-dimensional electron-gas AlN/GaN structures with AlN barrier thicknesses varied between 24…”
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Power and linearity characteristics of GaN MISFETs on sapphire substrate by Chini, A., Wittich, J., Heikman, S., Keller, S., DenBaars, S.P., Mishra, U.K.

“…The improvement of device performance arising from the adoption of a MIS gate structure in GaN field-effect transistor (FET) is presented. GaN MISFET/MESFET…”
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Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs by Buttari, D., Chini, A., Meneghesso, G., Zanoni, E., Moran, B., Heikman, S., Zhang, N.Q., Shen, L., Coffie, R., DenBaars, S.P., Mishra, U.K.

“…Pre-metal-deposition reactive ion etching (RIE) was performed on an Al/sub 0.3/Ga/sub 0.7/N/AlN/GaN heterostructure in order to improve the…”
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High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology by Paidi, V., Shouxuan Xie, Coffie, R., Moran, B., Heikman, S., Keller, S., Chini, A., DenBaars, S.P., Mishra, U.K., Long, S., Rodwell, M.J.W.

“…A 36-dBm high-linearity single-ended common-source class-B monolithic-microwave integrated-circuit power amplifier is reported in GaN high electron-mobility…”
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GaN–GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design by Keller, S., Heikman, S., Shen, L., Smorchkova, I. P., DenBaars, S. P., Mishra, U. K.

“…The formation of a two-dimensional electron gas (2DEG) was observed at GaN–GaN junctions, when an AlN layer of a thickness greater than or equal to 0.5 nm was…”
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A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier by Xu, J.J., Keller, S., Parish, G., Heikman, S., Mishra, U.K., York, R.A.

“…In this paper, we report the latest progress of a GaN-based broad-band power amplifier using AlGaN/GaN high electron mobility transistors (HEMTs), grown on…”
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Vapor-phase epitaxy of gallium nitride by gallium arc discharge evaporation by Heikman, S., Keller, S., Mishra, U.K.

“…Vapor-phase epitaxy of GaN was performed by combining ammonia with gallium evaporated into an inert gas stream by a DC arc discharge, and letting the mixture…”
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